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    NPN TRANSISTOR 1500V Search Results

    NPN TRANSISTOR 1500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLX9160T Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 1a, 1500V/0.05A, 5000 Vrms, SO16L-T, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 1500V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


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    NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a PDF

    NTE2301

    Abstract: No abstract text available
    Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction


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    NTE2301 NTE2301 PDF

    NTE163A

    Abstract: No abstract text available
    Text: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V


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    NTE163A NTE163A 100mA, PDF

    NPN/TRANSISTOR 187

    Abstract: NTE164
    Text: NTE164 Silicon NPN Transistor TV Vertical Output Description: The NTE164 is a high voltage silicon NPN transistor in a TO3 type package designed for color TV vertical output applications. Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V


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    NTE164 NTE164 NPN/TRANSISTOR 187 PDF

    NTE389

    Abstract: No abstract text available
    Text: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction


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    NTE389 NTE389 PDF

    NTE2303

    Abstract: No abstract text available
    Text: NTE2303 Silicon NPN Transistor Horizontal Deflection Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction


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    NTE2303 NTE2303 100mA, 600mA, PDF

    NTE2300

    Abstract: No abstract text available
    Text: NTE2300 Silicon NPN Transistor High Voltage, Horizontal Output Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: D High Breakdown Voltage and High Reliability


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    NTE2300 NTE2300 100mA, 200mA, PDF

    NTE2635

    Abstract: NTE263
    Text: NTE2635 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal


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    NTE2635 NTE2635 NTE263 PDF

    NTE165

    Abstract: NPN Transistor 1500V
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


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    NTE165 NTE165 100mA, NPN Transistor 1500V PDF

    NPN/TRANSISTOR 187

    Abstract: NTE165
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


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    NTE165 NTE165 100mA, 100mA NPN/TRANSISTOR 187 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


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    NTE165 NTE165 100mA, PDF

    NPN Transistor 1500V

    Abstract: NTE165
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


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    NTE165 NTE165 100mA, NPN Transistor 1500V PDF

    NPN Transistor 1.5A 700V

    Abstract: No abstract text available
    Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection


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    NTE2318 NTE2318 NPN Transistor 1.5A 700V PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TRANSISTOR TO-3PML 1. DESCRIPTION BASE 2. COLLECTOR 3. EMITTER The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television


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    BU508 BU508AFI 100mA, QW-R214-001 PDF

    MJ12005

    Abstract: No abstract text available
    Text: , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. MJ12005 NPN SILICON TRANSISTOR JEDEC TO-3 CASE MJ12005 type ia a Silicon NPN Power Transistor mounted in a hermetically sealed metal case designed for Horizontal Deflection Circuits.


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    MJ12005 MJ12005 PDF

    NTE3042

    Abstract: dsa0023459
    Text: NTE3042 Optoisolator NPN Transistor Output Description: The NTE3042 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6–Lead DIP type package. Features: D 1500V Isolation


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    NTE3042 NTE3042 dsa0023459 PDF

    BU2508AF

    Abstract: transistor bu2508af bu2508af equivalent
    Text: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol


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    BU2508AF BU2508AF O-218) transistor bu2508af bu2508af equivalent PDF

    BU2508AF

    Abstract: bu2508af equivalent TRANSISTOR BU2508AF
    Text: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol


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    BU2508AF BU2508AF O-218) bu2508af equivalent TRANSISTOR BU2508AF PDF

    BUL310PI

    Abstract: BUL310 bul 310 tf BUL310P
    Text: BUL310 BUL310PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    BUL310 BUL310PI 125oC ISOWATT220 E81734 1500VRMS O-220 ISOWATT220 BUL310 BUL310PI bul 310 tf BUL310P PDF

    NPN Transistor 1500V

    Abstract: BU706 colour television schematics QDBA553 transistor smps high voltage offline smps
    Text: 0056551 6 • 3~ t3 SGS-THOMSON LICTBOBOeS S G S-THOMSON BU706 3QE i HIGH VOLTAGE NPN TRANSISTOR ADVANCE DATA ■ HIGH VOLTAGE ■ HIGH SPEED SWITCHING DESCRIPTION The BU706 is a high voltage, high speed switching silicon multiepitaxial NPN transistor in TO-218 plas­


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    QDBA553. BU706 BU706 O-218 300ns, NPN Transistor 1500V colour television schematics QDBA553 transistor smps high voltage offline smps PDF

    transistor DA 218

    Abstract: No abstract text available
    Text: SGS-THOMSON BU706 HIGH VOLTAGE NPN TRANSISTOR A D VA N CE D A TA HIGH VOLTAGE HIGH SPEED SW ITCHING D E S C R IP T IO N The BU706 is a high voltage, high speed switching silicon multiepitaxial NPN transistor in TO -218 plas­ tic package intended for use in horizontal deflection


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    BU706 BU706 transistor DA 218 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUL57 BUL57PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . . . . . . . BUL57 IS STM PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED


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    BUL57 BUL57PI ISOWATT220 E81734 O-220 ISOWATT22Q BUL57PI PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6608~[ _ NPN Triple Diffused Planar Silicon Transistor _ 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. • High breakdown voltage VCBO= 1500V .


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    ENN6608~ 2SC5682 2SC5682] PDF

    BUL310

    Abstract: BUL310P BUL310 TRANSISTOR
    Text: SGS-THOM SON [» i ü[LI gTFi®ifligi BUL310 BUL31 OPI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . . . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


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    BUL310 BUL31 ISOWATT220 E81734 1500Vrms O-220 ISOWATT220 BUL310P! BUL310/PI BUL310P BUL310 TRANSISTOR PDF