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    NPN TRANSISTOR 1500V 20A Search Results

    NPN TRANSISTOR 1500V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLX9160T Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 1a, 1500V/0.05A, 5000 Vrms, SO16L-T, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 1500V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


    Original     		PDF NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a

    NTE2301

    Abstract: No abstract text available
    Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction


    Original     		PDF NTE2301 NTE2301

    NTE389

    Abstract: No abstract text available
    Text: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction


    Original     		PDF NTE389 NTE389

    2SC5683

    Abstract: No abstract text available
    Text: Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .


    Original     		PDF ENN6653A 2SC5683 2SC5683] 2SC5683

    TA-2891

    Abstract: 2sc5682 ENN6608a
    Text: Ordering number : ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .


    Original     		PDF ENN6608A 2SC5682 2SC5682] TA-2891 2sc5682 ENN6608a

    TA-3147

    Abstract: 2SC5683
    Text: Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .


    Original     		PDF ENN6653A 2SC5683 2SC5683] TA-3147 2SC5683

    2SD2634

    Abstract: No abstract text available
    Text: Ordering number:ENN6474A NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process).


    Original     		PDF ENN6474A 2SD2634 2SD2634] 2SD2634

    TA-2595

    Abstract: 2sd2634
    Text: Ordering number:ENN6474 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process).


    Original     		PDF ENN6474 2SD2634 2SD2634] TA-2595 2sd2634

    TT2190

    Abstract: 7551-1 TT2190LS TT219
    Text: Ordering number : ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


    Original     		PDF ENN7551 TT2190LS 2079D TT2190LS] O-220FI TT2190 7551-1 TT2190LS TT219

    2SD2634

    Abstract: TA-3147 TA-2914
    Text: Ordering number : ENN6474B 2SD2634 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN6474B 2SD2634 2SD2634] 2SD2634 TA-3147 TA-2914

    IT02410

    Abstract: 2SC5723 A1030 40c208
    Text: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7398 2SC5723 2048B 2SC5723] IT02410 2SC5723 A1030 40c208

    NPN VCEO 800V

    Abstract: NTE2533
    Text: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE2533 100ns 100mA, NPN VCEO 800V NTE2533

    2SC5723

    Abstract: No abstract text available
    Text: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7398 2SC5723 2048B 2SC5723] 2SC5723

    IC 7402

    Abstract: 7402 ic datasheet IC 7402 2SC5722
    Text: 2SC5722 Ordering number : ENN7402 NPN Triple Diffused Planar Silicon Transistor 2SC5722 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF 2SC5722 ENN7402 IC 7402 7402 ic datasheet IC 7402 2SC5722

    200V transistor npn 2a

    Abstract: 2SD1885C
    Text: Ordering number : ENN7087 2SD1885C NPN Triple Diffused Planar Silicon Transistor 2SD1885C Color TV Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7087 2SD1885C 2SD1885C] 200V transistor npn 2a 2SD1885C

    NTE2331

    Abstract: NPN VCEO 800V transistor for horizontal deflection output
    Text: NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Applications: D Color TV Horizontal Deflection Output D Color Display Horizontal Deflection Output Features: D High Speed tf = 100nsec D High Breakdown Voltage (VCBO = 1500V)


    Original     		PDF NTE2331 100nsec) NTE2331 NPN VCEO 800V transistor for horizontal deflection output

    NPN Transistor 1500V 20a

    Abstract: No abstract text available
    Text: 2SC5683 NPN Triple Diffused Planar Silicon Transistor Very High-Definition CRT DisplayHorizontal Deflection Output Applications TENTATIVE Features • Hihg speed. • High breakdown voltage VCBO=1500V . • High reliability( Adoption of HVP process ). •Adoption of MBIT process.


    Original     		PDF 2SC5683 100mA, 991208TM2fXHD NPN Transistor 1500V 20a

    2SD2650

    Abstract: No abstract text available
    Text: Ordering number : ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


    Original     		PDF ENN6781A 2SD2650 2SD2650] 2SD2650

    2sc3998 transistor

    Abstract: 2SC3998 ITR06226 ITR06227 ITR06228 ITR06229 silicon transistor Vcbo 800 Vceo 1000 Ic 20A transistor 2SC3998 10A800
    Text: 2SC3998 Ordering number : EN2732A SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed tf=100ns typ . High breakdown voltage (VCBO=1500V).


    Original     		PDF 2SC3998 EN2732A 100ns 2sc3998 transistor 2SC3998 ITR06226 ITR06227 ITR06228 ITR06229 silicon transistor Vcbo 800 Vceo 1000 Ic 20A transistor 2SC3998 10A800

    TA-3012

    Abstract: 2SD2650
    Text: Ordering number : ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


    Original     		PDF ENN6781A 2SD2650 2SD2650] TA-3012 2SD2650

    2SC3998

    Abstract: NPN Transistor 1500V 20a
    Text: 2SC3998 Ordering number : EN2732A SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed tf=100ns typ . High breakdown voltage (VCBO=1500V).


    Original     		PDF EN2732A 2SC3998 100ns 2SC3998 NPN Transistor 1500V 20a

    2sc6091

    Abstract: No abstract text available
    Text: 2SC6091 Ordering number : ENA0994 SANYO Semiconductors DATA SHEET 2SC6091 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.


    Original     		PDF 2SC6091 ENA0994 A0994-4/4 2sc6091

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6608~[ _ NPN Triple Diffused Planar Silicon Transistor _ 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. • High breakdown voltage VCBO= 1500V .


    OCR Scan     		PDF ENN6608~ 2SC5682 2SC5682]

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number : ENN6653 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).


    OCR Scan     		PDF ENN6653 2SC5683