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    NPN TRANSISTOR 2SC1383 Search Results

    NPN TRANSISTOR 2SC1383 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 2SC1383 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER


    Original     		PDF O-92MOD 2SC1383 2SC1384 O-92MOD 2SA0683 2SA0684. 500mA 500mA

    2SC1383

    Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER


    Original     		PDF O-92MOD 2SC1383 2SC1384 O-92MOD 2SA0683 2SA0684. 500mA 500mA 2SC1383 2SA0684 2SC1384 2SC1383 transistor

    transistor 2sa684

    Abstract: ic 2sc1384 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384 NPN transistor 2sc1383 E1808
    Text: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 and 2SA0684 (2SA684) Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat).


    Original     		PDF 2SC1383, 2SC1384 2SA0683 2SA683) 2SA0684 2SA684) 2SA0683 2SA0684. 2SC1383 transistor 2sa684 ic 2sc1384 2SA0684 2SA683 2SA684 2SC1383 2SC1384 NPN transistor 2sc1383 E1808

    2SC1384

    Abstract: 2SC1383 ic 2sc1384 2SA683 2SA684
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, 2SC1384 ic 2sc1384 2SA684

    2SC1384

    Abstract: 2SC1383 2SA0683 2SA0684
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR


    Original     		PDF O-92L 2SC1383 2SC1384 O-92L 2SA0683 2SA0684. 500mA 500mA 2SC1384 2SC1383 2SA0684

    2sc1384

    Abstract: 2SC1383 transistor ic 2sc1384 NPN transistor 2sc1383 2SA683 2SA684 2SC1383
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, -50mA 2sc1384 2SC1383 transistor ic 2sc1384 NPN transistor 2sc1383 2SA684

    2SC1384

    Abstract: 2SC1383 ic 2sc1384 2SA683 2SA684 transistor 2sc1384
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, -50mA 2SC1384 ic 2sc1384 2SA684 transistor 2sc1384

    2SC1384

    Abstract: 2SA683 2SA684 ic 2sc1384 2SC1383
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, 2SC1384 2SA684 ic 2sc1384

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR


    Original     		PDF O-92L 2SC1383 2SC1384 O-92L 2SA0683 2SA0684. 500mA 500mA

    2SC1383L

    Abstract: 2SC1384L 2SA684G 2SA683 2SA684 2SC1384L-R 2SC1384L-Q
    Text: 2SC1383L / 2SC1384L NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92L FEATURE Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA683 and 2SA684.


    Original     		PDF 2SC1383L 2SC1384L O-92L 2SA683 2SA684. 2SC1383L-Q 2SC1383L-R 2SC1383L-S 2SC1384L-Q 2SC1384L-R 2SC1384L 2SA684G 2SA684 2SC1384L-R 2SC1384L-Q

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR


    Original     		PDF O-92L 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384:

    2SC1384

    Abstract: 2SC1383 2sc1384 transistor 2SC1383 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR


    Original     		PDF O-92L 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384: 500mA 2SC1384 2SC1383 2sc1384 transistor 2SC1383 transistor

    2sc1384 transistor

    Abstract: 2SC1384 2SA683 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC
    Text: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA683 and 2SA684.


    Original     		PDF 2SC1383, 2SC1384 2SA683 2SA684 2SA684. 2SC1383 2sc1384 transistor 2SC1384 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W(Tamb=25℃) 1 A 2. COLLECTOR


    Original     		PDF O-92MOD 2SC1383 2SC1384 O-92MOD 2SC1383: 2SC1384:

    2SC1384

    Abstract: ic 2sc1384 2SC1383
    Text: 2SC1383/2SC1384 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 MOD 4.9 ±0.2 6.0±0.2 8.6±0.2 FEATURE Power dissipation 1.0±0.1 1 W Tamb=25℃ 2.0 +0.3 –0.2


    Original     		PDF 2SC1383/2SC1384 2SC1383: 2SC1384: 2SC1383 01-Jun-2002 2SC1384 2SC1384 ic 2sc1384 2SC1383

    2sc1384

    Abstract: 2SC1383 ic 2sc1384 transistor 2sc1384 NPN transistor 2sc1384 NPN transistor 2sc1383 2SC138
    Text: 2SC1383/2SC1384 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: 1. EMITTER 1 W(Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 2SC1383: 30 V V(BR)CBO: 2SC1384: 50 V Operating and storage junction temperature range


    Original     		PDF 2SC1383/2SC1384 2SC1383 2SC1384 O-92MOD 2SC1383: 2SC1384: 500mA 2sc1384 2SC1383 ic 2sc1384 transistor 2sc1384 NPN transistor 2sc1384 NPN transistor 2sc1383 2SC138

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR（ NPN ） ＴＯ－９２ＭＯＤ FEATURE Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage


    Original     		PDF O-92MOD 2SC1383 2SC1384 2SC1383ï 2SC1384ï

    2sc1384

    Abstract: 2sc1383 transistor 2sc1384 NPN transistor 2sc1384 85170
    Text: 2SC1383/2SC1384 TO-92MOD Transistor NPN 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3 5.800 6.200 3.BASE 8.400 8.800 Features — — 0.900 1.100 0.400 0.600 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200


    Original     		PDF 2SC1383/2SC1384 O-92MOD O-92MOD 2SA0683 2SA0684. 2SC1383 2SC1384 transistor 2sc1384 NPN transistor 2sc1384 85170

    2sc1384

    Abstract: transistor 2sc1384 NPN transistor 2sc1383 2SC1383 transistor 2sc1383 transistor 7800 TO-92L to92l 85170 2SA0683
    Text: 2SC1383/2SC1384 TO-92L Transistor NPN TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 3.BASE 1 Features — — 2 3 0.600 0.800 0.350 0.550 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200


    Original     		PDF 2SC1383/2SC1384 O-92L O-92L 2SA0683 2SA0684. 2SC1383 2SC1384 transistor 2sc1384 NPN transistor 2sc1383 2SC1383 transistor transistor 7800 TO-92L to92l 85170

    2SC1384

    Abstract: transistor 2sc1384 ic 2sc1384 2SC1383
    Text: 2SC1383/2SC1384 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR 3. BASE 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range


    Original     		PDF 2SC1383/2SC1384 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384: 500mA 2SC1384 transistor 2sc1384 ic 2sc1384 2SC1383

    2SA683

    Abstract: 2SC1384 ic 2sc1384 2SA0683 2SA0684 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC TRANSISTOR 2sa684
    Text: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 , 2SA0684 (2SA684) 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE(sat)


    Original     		PDF 2SC1383, 2SC1384 2SA0683 2SA683) 2SA0684 2SA684) 2SA683 2SC1384 ic 2sc1384 2SA0683 2SA0684 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC TRANSISTOR 2sa684

    2SC1384

    Abstract: 2SC1383 TO-92L
    Text: Transys Electronics L I M I T E D TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR 3. BASE 1 A 2SC1383:


    Original     		PDF O-92L 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384: 500mA 2SC1384 2SC1383 TO-92L

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6