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    NPN TRANSISTOR 30A 400V Search Results

    NPN TRANSISTOR 30A 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 30A 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    PC817 optocoupler

    Abstract: T1A 250v fuse optocoupler PC817 T1A 250v cramer transformers sharp optocoupler PC817 PC817 OPTOCOUPLER SHARP capacitor 100nf 250v polyester Cramer coil 1nF Y1 CAPACITOR
    Text: ESBT Auxiliary SMPS for 150W Revised: Monday, February 21, 2005 Petr Lidak Revision: 1,0 Item Quantity Reference Part Description electrolytic capacitor, EPCOS, LL, B43504-A5227-M, 400V Capacitors: 1 2 C1,C2 220uF 2 1 C3 10nF ceramic capacitor, 50V, -55.125°C


    Original     		PDF B43504-A5227-M, 220uF 100nF 470pF 8nF/1250V B32652A7682J 39-071B ETD39 T34836 L5991A PC817 optocoupler T1A 250v fuse optocoupler PC817 T1A 250v cramer transformers sharp optocoupler PC817 PC817 OPTOCOUPLER SHARP capacitor 100nf 250v polyester Cramer coil 1nF Y1 CAPACITOR

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    NPN Transistor 50A 400V

    Abstract: BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BUP53 O-204AE) NPN Transistor 50A 400V BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V

    transistor equivalents for PN2222a

    Abstract: schematic SMPS 24V 24v 5a smps flyback operate in both ccm and dcm smps 5kw diode 200v 30a SMPS 150w 24v pwm smps flyback 150w emitter switched bipolar transistor
    Text: STEVAL-ISA007V1 High Power 3-Phase Auxiliary Power Supply Design Based on L5991 and ESBT STC08DE150 Data Brief Features • 3-phase 150W auxiliary dual output SMPS ■ Input: 400Vac +/- 20% ■ Output voltage 1: 24V, 6.25A @ 90kHz ■ Output voltage 2: 5V, 0.075A @ 90kHz


    Original     		PDF STEVAL-ISA007V1 L5991 STC08DE150 400Vac 90kHz 35kHz L5991A transistor equivalents for PN2222a schematic SMPS 24V 24v 5a smps flyback operate in both ccm and dcm smps 5kw diode 200v 30a SMPS 150w 24v pwm smps flyback 150w emitter switched bipolar transistor

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode

    bux23

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX23 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BUX23 O-204AE) bux23

    smps 5kw

    Abstract: schematic SMPS 24V NPN transistor for switching applications, 400V flyback operate in both ccm and dcm l5991 SMPS 150w 24v transistor equivalents for PN2222a emitter switched bipolar transistor flyback 150w STEVAL-ISA007V1
    Text: STEVAL-ISA007V1 High power 3-phase auxiliary power supply evaluation board Based on L5991 and ESBT STC08DE150HV Preliminary Data Features • 3-phase 150W auxiliary dual output SMPS ■ Input: 400Vac +/- 20% ■ Output voltage 1: 24V, 6.25A @ 90kHz ■ Output voltage 2: 5V, 0.075A @ 90kHz


    Original     		PDF STEVAL-ISA007V1 L5991 STC08DE150HV 400Vac 90kHz 35kHz smps 5kw schematic SMPS 24V NPN transistor for switching applications, 400V flyback operate in both ccm and dcm SMPS 150w 24v transistor equivalents for PN2222a emitter switched bipolar transistor flyback 150w STEVAL-ISA007V1

    NTE53

    Abstract: TRANSISTOR 450V 5A NPN 100W
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


    Original     		PDF NTE53 NTE53 TRANSISTOR 450V 5A NPN 100W

    NTE385

    Abstract: No abstract text available
    Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated


    Original     		PDF NTE385 NTE385

    NTE53

    Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


    Original     		PDF NTE53 NTE52 NTE53 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    dc motor 300W

    Abstract: NPN 400V 40A BUP53 BUP53R
    Text: BUP53R MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL TRANSISTOR FEATURES 25.4 1.0 30.15 (1.187) 10.92 (0.430) 2 16.89 (0.665) 1 1.57 (0.062) • • • • • • LOW VCE(SAT) FAST SWITCHING SINGLE CHIP COSNTRUCTION HIGH SWITCHING CURRENTS HIGH RELIABILITY


    Original     		PDF BUP53R dc motor 300W NPN 400V 40A BUP53 BUP53R

    NTE2348

    Abstract: No abstract text available
    Text: NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V


    Original     		PDF NTE2348 NTE2348

    Untitled

    Abstract: No abstract text available
    Text: BUP53R MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL TRANSISTOR FEATURES 25.4 1.0 30.15 (1.187) 10.92 (0.430) 2 16.89 (0.665) 1 1.57 (0.062) • • • • • • LOW VCE(SAT) FAST SWITCHING SINGLE CHIP COSNTRUCTION HIGH SWITCHING CURRENTS HIGH RELIABILITY


    Original     		PDF BUP53R

    BUL98B

    Abstract: No abstract text available
    Text: BUL98B MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		PDF BUL98B BUL98B

    2SD642

    Abstract: NPN Transistor 30A 400V AC63 NPN Transistor 600V
    Text: 5/U3>N PN= Ê«*tflBh5:/5>a5> G -TR SILICON NPN TRIPLE DIFFUSEID MESA TRANSISTOR(G-TR) a ft x m m TENTATIVE INDUSTRIAL APPLICATIONS Unit in 0 3 4 .5 MAX ° High Power Switching Applications • »»ŒT-#- . <j ¿33.5 m k : ^ ¡g V q e O = 400V v CE(sat) = 1-5V( MAX. )


    OCR Scan     		PDF TC-19 TB-30 8-33A1A AC634Â 50/is 50/is 2sd642 2SD642 NPN Transistor 30A 400V AC63 NPN Transistor 600V

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 37E D SEMELAB LTD • Ô1331Ô7 00DD1Ö0 Ô M S t lL B SEMELAB JUL 0 6 1988 ^ BUT 92A NPN FAST SW ITCHING POWER TRANSISTOR M EC H A N IC A L DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES H-1-6 • VERY LOW V,CE SAT • HIGH EFFICIENCY SWITCHING


    OCR Scan     		PDF 00DD1Ã 0-83mH 0-83ii G0001Ã

    CT7605

    Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
    Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V


    OCR Scan     		PDF CT7605 545kgf 100kgf 47nux 100mA lc200A CT7605 vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor

    SDT55456

    Abstract: SDT55472 SDT55560 to63 400v
    Text: Devices. Inc VERY HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:


    OCR Scan     		PDF