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    NPN TRANSISTOR 8050D Search Results

    NPN TRANSISTOR 8050D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 8050D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D

    NPN transistor 8050d

    Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d

    NPN transistor 8050d

    Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
    Text: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    transistor br 8050

    Abstract: NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 8050C 8050D transistor br 8050 NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor

    NPN transistor 8050d

    Abstract: bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 8050 SR13 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS


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    PDF C-120 190505E NPN transistor 8050d bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050

    aivr341

    Abstract: aIVR aivr 341 aIVR2104 aIVR4208 HT7335 8050D HT7136 Aivr34112 APLUS
    Text: Integrated Circuits Inc. aIVR Series A PLUS MAKE YOUR PRODUCTION A-PLUS Data Sheet aIVR1004 – 10 sec aIVR2104 – 21 sec aIVR4208 – 42 sec aIVR8508 – 85 sec aIVR34112 – 341 sec APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei,


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    PDF aIVR1004 aIVR2104 aIVR4208 aIVR8508 aIVR34112 85sec 8050D. aivr341 aIVR aivr 341 aIVR2104 aIVR4208 HT7335 8050D HT7136 Aivr34112 APLUS

    8050d transistor

    Abstract: transistor 8050 transistor SS 8050 W52900 NPN transistor 8050d 8050 REGULATOR ic 8050D W55412A W55FXX winbond powerspeech
    Text: W52900 ADPCM VOICE SYNTHESIZER ROM-LESS PowerSpeech II GENERAL DESCRIPTION The W52900 is a CMOS IC used solely for the purpose of demonstrating the W529xx series PowerSpeech II products. The W52900 is a 4-bit ADPCM and/or 8-bit PCM ROMless voice synthesizer that provides basic


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    PDF W52900 W52900 W529xx 8050d transistor transistor 8050 transistor SS 8050 NPN transistor 8050d 8050 REGULATOR ic 8050D W55412A W55FXX winbond powerspeech

    he 8050d

    Abstract: NPN transistor 8050d 8050d transistor WINBOND APPLICATION NOTE W55F10 transistor 8050d W55FXX W83791SD W83972D 8050D AC97
    Text: W83791SD Winbond H/W Monitoring IC i Publication Release Date: Jun,2001 Revision 0.2 W83791SD W83791SD Data Sheet Revision History Pages 1 n.a. 2 n.a. Dates 01/Jan Version 0.2 Version on Web Main Contents n.a. All version before 0.20 are for internal use.


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    PDF W83791SD W83791SD 01/Jan persW55F10 W55F10 he 8050d NPN transistor 8050d 8050d transistor WINBOND APPLICATION NOTE W55F10 transistor 8050d W55FXX W83972D 8050D AC97

    Untitled

    Abstract: No abstract text available
    Text: W52900 ADPCM VOICE SYNTHESIZER ROM-LESS Power Speech II GENERAL DESCRIPTION The W52900 is a CMOS IC used solely for the purpose of demonstrating the W529xx series PowerSpeech II products. The W52900 is a 4-bit ADPCM and/or 8-bit PCM ROMless voice synthesizer that provides basic


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    PDF W52900 W52900 W529xx

    aivr341

    Abstract: aivr341n 8050D HT7133 HT7335 HT7536 Aplus Integrated Circuits "aplus integrated circuits"
    Text: Integrated Circuits Inc. aIVR341N APLUS MAKE YOUR PRODUCTION A-PLUS Data Sheet aIVR341N – 341 sec APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路一段 32 號 3 樓之 10.


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    PDF aIVR341N 341sec 8050D. 14KHz. aivr341 aivr341n 8050D HT7133 HT7335 HT7536 Aplus Integrated Circuits "aplus integrated circuits"

    NPN transistor 8050d

    Abstract: aIVR8511 8050d transistor HT7133 8050d he 8050d APLUS HT7335 HT7536 4W low gain BJT
    Text: Integrated Circuits Inc. aIVR8511 A PLUS MAKE YOUR PRODUCTION A-PLUS Data Sheet aIVR8511 – 85 sec APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路一段 32 號 3 樓之 10.


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    PDF aIVR8511 85sec 8050D. 14KHz. 14KHz, NPN transistor 8050d aIVR8511 8050d transistor HT7133 8050d he 8050d APLUS HT7335 HT7536 4W low gain BJT

    aivr3k42

    Abstract: HT7335 8050D HT7133 HT7136 HT7536 42sec Volume Control Integrated Circuits
    Text: Integrated Circuits Inc. aIVR3K Series A PLUS MAKE YOUR PRODUCTION A-PLUS Data Sheet aIVR3K10 – 10 sec aIVR3K21 – 21 sec aIVR3K42 – 42 sec APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路一段 32 號 3 樓之 10.


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    PDF aIVR3K10 aIVR3K21 aIVR3K42 HT7335 8050D. 70x70um, aivr3k42 HT7335 8050D HT7133 HT7136 HT7536 42sec Volume Control Integrated Circuits

    he 8050d

    Abstract: W58300 W523S60 k1760 W523S08 W523S10 equivalent of transistor 8050D W523S15 W523S20 W523S40
    Text: W523SXX Application Note preliminary HIGH FIDELITY POWER SPEECH GENERAL DESCRIPTION The W523Sxx family are programmable speech synthesis ICs that utilize Winbond′s new high fidelity voice synthesis algorithm to generate all types of voice effects with high sound quality.


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    PDF W523SXX W523Sxx' W523S08 W523S10 W523S12 W523S15 W523S20 W523S25 he 8050d W58300 W523S60 k1760 W523S08 W523S10 equivalent of transistor 8050D W523S15 W523S20 W523S40

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


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    PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h

    8050d transistor

    Abstract: transistor 8050 Transistor Q 8050
    Text: W52900 5H&y ttLLXP" irie cfcio n ics C orp. ADPCM VOICE SYNTHESIZER ROM-LESS PowerSpeech II GENERAL DESCRIPTION The W52900 is a CMOS 1C used solely for the purpose of demonstrating the W529xx series PowerSpeech II products. The W52900 is a 4-bit ADPCM and/or 8-bit PCM ROMIess voice synthesizer that provides basic


    OCR Scan
    PDF W52900 W52900 W529xx 852-2VSS2SS4 i43Sfjf 8050d transistor transistor 8050 Transistor Q 8050