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    NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V MA Search Results

    NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pmd18k100

    Abstract: TO3 package NPN transistor collector base and emitter 100V 10-9The
    Text: SEME PMD18K100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington


    Original     		PDF PMD18K100 PMD18K100 100mA 300ms, TO3 package NPN transistor collector base and emitter 100V 10-9The

    Untitled

    Abstract: No abstract text available
    Text: S EM E PMD18K100 LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington


    Original     		PDF PMD18K100 PMD18K100 100mA 300ms,

    DARLINGTON 30A 100V npn

    Abstract: TO3 package PMD18D100 darlington 300w 2.2KW
    Text: SEME PMD18D100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 100A PEAK 300 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18D100 is an NPN Darlington


    Original     		PDF PMD18D100 PMD18D100 100mA 300ms, DARLINGTON 30A 100V npn TO3 package darlington 300w 2.2KW

    NPN Transistor VCEO 80V 100V

    Abstract: 2N4239 LE17
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N4239 O-205AD) NPN Transistor VCEO 80V 100V 2N4239 LE17

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N4239 34mW/Â O-205AD)

    BDY24

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ


    Original     		PDF BDY24 O-204AA) BDY24

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF BUX10 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF BUX10 O-204AA)

    NPN Transistor VCEO 80V 100V

    Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18
    Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181


    Original     		PDF KSE180/181/182 O-126 KSE181 KSE182 KSE180 100mA 500mA NPN Transistor VCEO 80V 100V KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ


    Original     		PDF BDY24 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24/A/B/C • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB


    Original     		PDF BDY24/A/B/C O-204AA)

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY24/A/B/C • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB


    Original     		PDF BDY24/A/B/C O-204AA)

    ZT91

    Abstract: No abstract text available
    Text: ZT91 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. General purpose NPN Transistor in a hermetic TO39 package. 0.89 max. (0.035)


    Original     		PDF O-205AD) 10MHz ZT91

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage


    Original     		PDF 2N6059 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage


    Original     		PDF 2N6059 O-204AA)

    NPN Transistor TO220 VCEO 60V IC 5a

    Abstract: No abstract text available
    Text: SILICON NPN POWER TRANSISTOR 2N5154X-220M • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5154X-220M O220M O-257AB) NPN Transistor TO220 VCEO 60V IC 5a

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN POWER TRANSISTOR 2N5154X-220M • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5154X-220M 67mW/Â O220M O-257AB)

    NPN Transistor VCEO 80V 100V

    Abstract: NTE2347
    Text: NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage IE = 0 , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V


    Original     		PDF NTE2347 NTE2347 500mA, 500mA NPN Transistor VCEO 80V 100V

    2N3772

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage


    Original     		PDF 2N3772 2N3772

    NPN Transistor 500V to3

    Abstract: NPN Transistor 10A 400V to3
    Text: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BUX45X O-204AA) NPN Transistor 500V to3 NPN Transistor 10A 400V to3

    TO39 package

    Abstract: NPN Transistor VCEO 80V 100V hfe 100 BSV64 ua 3086 172-C 60V transistor npn 2a
    Text: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100)


    Original     		PDF BSV64 O-205AD) TO39 package NPN Transistor VCEO 80V 100V hfe 100 BSV64 ua 3086 172-C 60V transistor npn 2a

    TS 4142

    Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
    Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 0075T4 T-33- KSD288 TS 4142 LC04A KSD73 100V transistor npn 5a ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142

    je180

    Abstract: MJE181 MJE170 MJE172 MJE180 MJE182 MJE200 MJE210
    Text: SAMSUNG SEMICONDUCTOR INC MJE172 D | 7^4145 0007^3 4 | PNP EPITAXIAL SILICON TRANSISTOR T -3 3-1 7 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage j CoHector-Emitter Voltage


    OCR Scan     		PDF MJE172 -65M50 O-126 MJE170 MJE200 je180 MJE181 MJE180 MJE182 MJE210