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    NPN TRANSISTOR GAIN 20 CURRENT 200MA Search Results

    NPN TRANSISTOR GAIN 20 CURRENT 200MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR GAIN 20 CURRENT 200MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3055A

    Abstract: Vce(sat) MJ2955A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A


    Original     		PDF 2N3055A MJ2955A 2N3055A Vce(sat) MJ2955A

    2N3055 power amplifier circuit

    Abstract: 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955


    Original     		PDF 2N3055 MJ2955 2N3055 power amplifier circuit 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit

    2N3055H

    Abstract: Vce(sat) transistor Ic 4A NPN transistor 2N3055H
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier


    Original     		PDF 2N3055H 2N3055H Vce(sat) transistor Ic 4A NPN transistor 2N3055H

    transistor tl 430 c

    Abstract: No abstract text available
    Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =


    Original     		PDF BDY46 transistor tl 430 c

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A


    Original     		PDF BDY55 10MHz

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY56 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage: VCE<sat)= 1.1 V(Max)@ lc = 4A


    Original     		PDF BDY56 10MHz

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 BDY47 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 350V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ lc = 15A


    Original     		PDF BDY47

    transistor MJE3055T

    Abstract: transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching


    Original     		PDF MJE3055T MJE2955T 500kHz transistor MJE3055T transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955

    BDY73

    Abstract: No abstract text available
    Text: J.E11EU LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY73 DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE=50-150@lc = 4A • Collector-Emitter Saturation Voltage: VCE(sa.)= 11 V(Max)@ lc = 4A


    Original     		PDF E11EU BDY73 100mA BDY73

    nte278

    Abstract: No abstract text available
    Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:


    Original     		PDF NTE278 NTE278 200mA. 200MHz 1200MHz 216MHz

    nte278

    Abstract: No abstract text available
    Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:


    Original     		PDF NTE278 200mA. 200MHz 1200MHz 360mA, 216MHz

    J5200

    Abstract: 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJP5200 FJPF5200
    Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Frequency : 30MHz.


    Original     		PDF FJP5200 80watts. 30MHz. FJP1943 2SC5200/FJL4315 2SC5242/FJA4313 O220F FJPF5200 O-220 FJP5200 J5200 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJPF5200

    2sc5200 amplifier

    Abstract: J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200
    Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 17A. High Power Dissipation : 80watts. High Frequency : 30MHz.


    Original     		PDF FJP5200 80watts. 30MHz. FJP1943 2SC5200/FJL4315 2SC5242/FJA4313 O220F FJPF5200 O-220 FJP5200 2sc5200 amplifier J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200

    j4315

    Abstract: No abstract text available
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. to2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315

    j4313-o

    Abstract: No abstract text available
    Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original     		PDF 2SC5242/FJA4313 130watts 30MHz. to2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o

    tip29 equivalent

    Abstract: tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor
    Text: TIP29, 30 High Power Bipolar Transistor Features: • Collector-Emitter sustaining voltageVCEO sus = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. • Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. • Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA.


    Original     		PDF TIP29, TIP29A, TIP30A TIP29C, TIP30C. 200mA. TIP30C TIP29A TIP29C tip29 equivalent tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor

    2sc5200 Spice Models

    Abstract: j5200 2sc5200 J5200-R
    Text: FJPF5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 50watts. High Frequency : 30MHz.


    Original     		PDF FJPF5200 50watts. 30MHz. FJPF1943 2SC5200/FJL4315 2SC5242/FJA4313 FJP5200 O-220F BVC2008 2sc5200 Spice Models j5200 2sc5200 J5200-R

    Untitled

    Abstract: No abstract text available
    Text: FJPF5200 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation :50watts. High Frequency : 30MHz.


    Original     		PDF FJPF5200 50watts. 30MHz. toFJPF1943 2SC5200/FJL4315 2SC5242/FJA4313 FJP5200 O-220F FJPF5200

    j4315

    Abstract: C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier

    j4315

    Abstract: c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers

    2sc5200 amplifier

    Abstract: 2sc5200 amplifier circuit J5200 fjA4313 2SC5200 fjpf5200 2sc5200 amplifiers FJP5200 FJPF1943 FJPF5200OTU
    Text: FJPF5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 50watts. High Frequency : 30MHz.


    Original     		PDF FJPF5200 50watts. 30MHz. FJPF1943 2SC5200/FJL4315 2SC5242/FJA4313 FJP5200 O-220F FJPF5200 2sc5200 amplifier 2sc5200 amplifier circuit J5200 fjA4313 2SC5200 2sc5200 amplifiers FJP5200 FJPF1943 FJPF5200OTU

    j4313-o

    Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
    Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original     		PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU

    J201 N-channel JFET to 90

    Abstract: diode ZENER A8 npn no switch spice bare die zener dual gate n-channel mosfet transistor N-Channel JFET switch
    Text: SST823 SST824 HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems FEATURES HIGH SWITCHING SPEED tON = 2.0ns LOW ON RESISTANCE rDS ON = 5Ω LOW GATE NODE CAPACITANCE C = 25pF LOW GATE LEAKAGE CAPACITANCE IG(ON) = 0.05µA ABSOLUTE MAXIMUM RATINGS1


    Original     		PDF SST823 SST824 SST824 200mA J201 N-channel JFET to 90 diode ZENER A8 npn no switch spice bare die zener dual gate n-channel mosfet transistor N-Channel JFET switch

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base


    Original     		PDF 2SC4467 2SC4467 2SC4467L-x-T3P-T 2SC4467G-x-T3P-T 2SC4467L-x-T3N-T 2SC4467G-x-T3N-T QW-R214-018