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    NPN TRANSISTOR IC MAX 3A Search Results

    NPN TRANSISTOR IC MAX 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR IC MAX 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 QW-R203-013

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 QW-R203-013

    2SD880L

    Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 2SD880L QW-R203-013 2SD880L 2sd880 equivalent utc 2SD880L 2SB834 power transistor audio amplifier 500 watts

    UTC2SD880

    Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA, QW-R203-013 UTC2SD880 2sd880 equivalent 2SB834

    2SD880L

    Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=300 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 transistor 2sd880 hfe-300 utc 2SD880L

    2SD880

    Abstract: 2sD880 TRANSISTOR 2SD880L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T OT-89 O-220 2sD880 TRANSISTOR 2SD880L

    2SD880L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L

    2sd880

    Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		PDF 2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R OT-89 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T O-220F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060/A NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		PDF 2SD1060/A 2SD1060G-x-AB3-R OT-89 2SD1060AG-x-AB3-R 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R


    Original     		PDF 2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-T92-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R


    Original     		PDF 2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-TA3-T

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.


    Original     		PDF 2SD1060 O-252 QW-R209-002

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.


    Original     		PDF 2SD1060 O-126 QW-R204-012

    2SD1060

    Abstract: transistor 2sD1060
    Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.


    Original     		PDF 2SD1060 OT-89 QW-R208-023 2SD1060 transistor 2sD1060

    transistor 2sD1060

    Abstract: npn transistor 3A 2SD1060
    Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.


    Original     		PDF 2SD1060 O-220 QW-R203-016 transistor 2sD1060 npn transistor 3A 2SD1060

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926

    DFN3020

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTC6720MC 185mV -220mV DS31929 DFN3020

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		PDF ZXTC6719MC 100mV -220mV DS31928 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		PDF ZXTC6719MC 100mV -220mV DS31928

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTC6720MC 185mV -220mV DS31929

    transistor A2

    Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


    Original     		PDF ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual