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    NPN TRANSISTOR IC20A Search Results

    NPN TRANSISTOR IC20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR IC20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    stocko mkf

    Abstract: SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151
    Text: APPLICATION NOTE Improved Picture Quality Module MK7-V1 V0.9 AN97058 Philips Semiconductors Improved Picture Quality Module MK7-V1 V0.9 Application Note AN97058 Abstract This documents describes the hardware content, the signal processing and the software control of the 100 Hz


    Original     		PDF AN97058 stocko mkf SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A ISSUE 2 - JANUARY 1995_ _ _ Full characterised data now available ABSOLUTE MAXIMUM RATINGS. ZTX1047A UNIT V CBO 35 V C o lle c to r-E m itte r V o lta g e


    OCR Scan     		PDF ZTX1047A ZTX1047A VCB-20V Ic-20A, lc-50mA, 50MHz width-300

    ZTX1047A

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSU E 2 - JANUARY 1995_ ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BO L Coilector-Base Voltage ZT X 1 04 7A U N IT v CBO 35 V CoNecior-Emitter Voltage v CEO 10 V Emitter-Base Voltage


    OCR Scan     		PDF ZTX1047A ZTX1047A 100nA ic-100nA 10m20V lB-20mA* lc-10mAr IC-10A, lc-20A,

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A I S S U E 1 - J U N E 1995_ _ _ FEATU RES * V cev = 8 0 V * V e ry lo w saturation v o lta g e s * H ig h G ain * 20 A m p s p u lse current


    OCR Scan     		PDF ZTX1049A D11G27

    b200k

    Abstract: mg20Q6EK MG20Q6EK1
    Text: MG20Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain


    OCR Scan     		PDF MG20Q6EK1 M620Q6EK1 b200k mg20Q6EK MG20Q6EK1

    Untitled

    Abstract: No abstract text available
    Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF DISCRETE/OPTOJ9097250 DT-33-3Sâ MG-20Q6EK1 hFEc100 MG20Q6EK1-1 TCH72SG DDlb30Ã iG20Q6F