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    NPN TRANSISTOR VCE 600V VBE 12V Search Results

    NPN TRANSISTOR VCE 600V VBE 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCE 600V VBE 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    NPN Transistor 600V

    Abstract: NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications.


    Original     		PDF 2SC5249 NPN Transistor 600V NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN

    2SC5249

    Abstract: FM20
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		PDF 2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20

    2SC5249

    Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		PDF 2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor

    2SC4907

    Abstract: FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 Unit 1max mA VEB=10V 100max µA IC=25mA 500min V VCB=600V IB 2 A VCE(sat) IC=2A, IB=0.4A


    Original     		PDF 2SC4907 Pulse12) 10to30 100max 500min 45typ O220F) 2SC4907 FM20 vbe 12v, vce 600v NPN Transistor

    vbe 12v, vce 600v NPN Transistor

    Abstract: 2SC3831
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		PDF 2SC3831 Pulse20) 100max 500min 105typ MT-100 vbe 12v, vce 600v NPN Transistor 2SC3831

    vbe 12v, vce 600v NPN Transistor

    Abstract: No abstract text available
    Text: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC


    Original     		PDF 2SC4907 Pulse12) O220F) 100max 500min 10to30 45typ vbe 12v, vce 600v NPN Transistor

    transistor npn high speed switching 5A 600v

    Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) transistor npn high speed switching 5A 600v 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor

    2SC4546

    Abstract: FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor

    2SC3831

    Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		PDF 2SC3831 Pulse20) 100max 500min 105typ MT-100 2SC3831 vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current

    2SC3830

    Abstract: vbe 12v, vce 600v NPN Transistor
    Text: 2SC3830 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) 600 V ICBO VCB=600V


    Original     		PDF 2SC3830 MT-25 Pulse12) 100max 500min 45typ 2SC3830 vbe 12v, vce 600v NPN Transistor

    vbe 12v, vce 600v NPN Transistor

    Abstract: No abstract text available
    Text: 2SC3830 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) 1max mA V IEBO


    Original     		PDF 2SC3830 Pulse12) 100max 500min 45typ MT-25 vbe 12v, vce 600v NPN Transistor

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    Untitled

    Abstract: No abstract text available
    Text: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • • • Small Variance in Storage Time Wide Safe Operating Area Suitable for ElectronicBallast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *


    Original     		PDF KSC5502 O-220 KSC5502

    Untitled

    Abstract: No abstract text available
    Text: KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5504D/KSC5504DT O-220 KSC5504DTM O-263

    ksc5504

    Abstract: NPN Transistor 600V TO-220
    Text: KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5504D/KSC5504DT O-220 KSC5504DTTU O-220 ksc5504 NPN Transistor 600V TO-220

    TC10T

    Abstract: No abstract text available
    Text: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5502D/KSC5502DT O-220 KSC5502DTTU O-220 TC10T

    TFR 600M

    Abstract: ksc5502
    Text: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5502D/KSC5502DT O-220 KSC5502DTM O-252 TFR 600M ksc5502

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    TFR 600M

    Abstract: IB180 200H
    Text: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5502D/KSC5502DT O-220 TFR 600M IB180 200H

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367F HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage


    OCR Scan     		PDF KSC5367F O-220F

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367 HIGH VOLTAGE AND HIGH RELIABILITY T O -2 2 0 • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage


    OCR Scan     		PDF KSC5367

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier