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    NPN TRANSISTOR VCEO 1200V Search Results

    NPN TRANSISTOR VCEO 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 37021

    Abstract: 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D
    Text: Ordering number : ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=2.0pF).


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    PDF ENN3702B 2SC4633LS 2079D 2SC4633LS] O-220FI IC 37021 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D

    2SC4632LS

    Abstract: ITR07331 ITR07332 ITR07333 ITR07334 ITR07335
    Text: Ordering number : ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=1.6pF).


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    PDF ENN3701B 2SC4632LS 2079D 2SC4632LS] O-220FI 2SC4632LS ITR07331 ITR07332 ITR07333 ITR07334 ITR07335

    2SC4632

    Abstract: 11599HA ICP30
    Text: Ordering number:EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=1.6pF). · Full-isolation package.


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    PDF EN3701A 2SC4632 200V/10mA 2079B 2SC4632] O-220FI 2SC4632 11599HA ICP30

    37021

    Abstract: 11599HA 2SC4633 IC 37021
    Text: Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=2.0pF). · Full-isolation package.


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    PDF EN3702A 2SC4633 200V/30mA 2079B 2SC4633] O-220FI 37021 11599HA 2SC4633 IC 37021

    NPN Transistor 600V

    Abstract: NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 600V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from


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    PDF BUX48B NPN Transistor 600V NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V

    NS1250

    Abstract: Solenoid Driver 2a MJ8504 vbe 10v, vce 500v NPN Transistor NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8504 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in


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    PDF MJ8504 NS1250 Solenoid Driver 2a MJ8504 vbe 10v, vce 500v NPN Transistor NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V

    NPN Transistor 1.5A 700V

    Abstract: NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from


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    PDF BUV48CFI NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425

    NPN Transistor 600V

    Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)


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    PDF 2SC5305 NPN Transistor 600V NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A

    power transistor npn to-220

    Abstract: NPN TRANSISTOR transistor B 560 transistor 800V 1A NPN Transistor VCEO 1200V transistor transistor Ic 4A NPN IC 0116 DC
    Text: Engineer Specification TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching


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    PDF TSC5327 O-220 50pcs TSC5327CZ O-220 power transistor npn to-220 NPN TRANSISTOR transistor B 560 transistor 800V 1A NPN Transistor VCEO 1200V transistor transistor Ic 4A NPN IC 0116 DC

    NPN Transistor TO-220

    Abstract: "NPN Transistor" HIGH VOLTAGE npn transistor NPN Transistor VCEO 1200V
    Text: TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


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    PDF TSC5327 O-220 TSC5327CZ 50pcs 300uS, NPN Transistor TO-220 "NPN Transistor" HIGH VOLTAGE npn transistor NPN Transistor VCEO 1200V

    Untitled

    Abstract: No abstract text available
    Text: TSC5327 Preliminary High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure


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    PDF TSC5327 O-220 50pcs TSC5327CZ

    transistor 2sc5387

    Abstract: 2SC5387 NPN Transistor 8A NPN Transistor VCEO 1200V TV power transistor datasheet transistor npn 2a "switching applications" 8a transistor VCBO-1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION •High Breakdown Voltage: VCBO= 1200V Min ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display,


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    PDF 2SC5387 64kHz transistor 2sc5387 2SC5387 NPN Transistor 8A NPN Transistor VCEO 1200V TV power transistor datasheet transistor npn 2a "switching applications" 8a transistor VCBO-1200V

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


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    PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    d5017

    Abstract: 3DD5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A
    Text: Case-rated bipolar transistor for type 3DD5017 for low frequency amplification R 3DD5017 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=1200V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


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    PDF 3DD5017 3DD5017 D5017 d5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A

    NTE2588

    Abstract: No abstract text available
    Text: NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CEO = 1200V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V


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    PDF NTE2588 NTE2588

    2SC4941

    Abstract: NPN Transistor VCEO 1200V
    Text: SavantIC Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4941 2SC4941 NPN Transistor VCEO 1200V

    2SC4941

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4941 2SC4941

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


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    PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    2SC5265

    Abstract: EN5321 VCBO-1200V
    Text: Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


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    PDF EN5321 2SC5265 2079B 2SC5265] O-220FI 2SC5265 EN5321 VCBO-1200V

    D1598HA

    Abstract: 2SC4256
    Text: Ordering number:EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .


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    PDF EN2924A 2SC4256 200V/10mA 2010C 2SC4256] O-220AB SC-46 D1598HA /D148MO, D1598HA 2SC4256

    IC 37021

    Abstract: 2SC4633 37021 EN3702A
    Text: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.


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    PDF EN3702A 2SC4633 IC 37021 37021

    IC 37021

    Abstract: 2sc4633
    Text: I O rd e rin g num ber:E N 3702A _ SAiYO i 2SC4633 NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications Feature^ • High breakdown voltage Vceo min = 1200V . • Small Cob (typical Gob= 2.0pF).


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    PDF 2SC4633 200V/30mA 100mA 2079B O-220FKLS) 80296YK TA-0465, AX-7506 IC 37021 2sc4633