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    NPN TRANSISTOR VCEO 80V 100V DARLINGTON IC 8A Search Results

    NPN TRANSISTOR VCEO 80V 100V DARLINGTON IC 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 80V 100V DARLINGTON IC 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIP102

    Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP101 TIP102 TIP100 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter

    DC 5V to DC 100V CIRCUIT DIAGRAM

    Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
    Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.


    Original     		PDF NTE215 NTE215 500IB1 500IB2 DC 5V to DC 100V CIRCUIT DIAGRAM 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    TIP102

    Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
    Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


    Original     		PDF TIP100/TIP101/TIP102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 TIP100/TIP101/TIP102 TIP102 TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    Untitled

    Abstract: No abstract text available
    Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


    Original     		PDF TIP100/TIP101/TIP102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 TIP100/TIP101/TIP102

    CJF6388

    Abstract: CJF6668
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF ISO/TS16949 CJF6388 O-220FP CJF6668 C-120 CJF6388Rev CJF6388 CJF6668

    NPN Transistor VCEO 80V 100V

    Abstract: darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF CJF6388 O-220FP CJF6668 C-120 CJF6388Rev NPN Transistor VCEO 80V 100V darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668

    BDX53C

    Abstract: BDX53 BDX53B BDX53 equivalent equivalents transistor bdx53 bdx54 darlington bdx53 BDX53A transistor darlington transistor bdx53c
    Text: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS,AUDIO AMPLIFIERS APPLICATION POWER LINEAR AND SWITCHING APPLICATIONS •Complementary to BDX54/54A/54B/54C respectively TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic


    Original     		PDF BDX53/A/B/C BDX54/54A/54B/54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53C BDX53 BDX53B BDX53 equivalent equivalents transistor bdx53 bdx54 darlington bdx53 BDX53A transistor darlington transistor bdx53c

    NTE2556

    Abstract: NPN Transistor VCEO 80V 100V
    Text: NTE2556 Silicon NPN Transistor Darlington, Motor/Relay Driver Features: D High DC Current Gain D High Current Capacity D Wide ASO Range Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers D Voltage Regulator Control Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE2556 500IB1 500IB2 NTE2556 NPN Transistor VCEO 80V 100V

    POWER TRANSISTOR TO-220 CASE TIP100

    Abstract: RESISTORs full line TIP102 Darlington transistor
    Text: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		PDF TIP100/101/102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 POWER TRANSISTOR TO-220 CASE TIP100 RESISTORs full line TIP102 Darlington transistor

    NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP100/101/102


    Original     		PDF TIP105/106/107 O-220 TIP100/101/102 TIP105 TIP106 TIP107 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    TIP100

    Abstract: TIP101 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor
    Text: TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors NPN Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min.


    Original     		PDF TIP100/101/102 TIP105/106/107 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor

    obsolete ic cross reference

    Abstract: transistor crossreference crossreference transistor
    Text: BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B obsolete ic cross reference transistor crossreference crossreference transistor

    Untitled

    Abstract: No abstract text available
    Text: BDX54/A/B/C BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector


    Original     		PDF BDX54/A/B/C BDX53, BDX53A, BDX53B BDX53C O-220 BDX54 BDX54A BDX54B

    BDX53 equivalent

    Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
    Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53 equivalent bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A

    BDX53 equivalent

    Abstract: bdx53c equivalent
    Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53 equivalent bdx53c equivalent

    DARLINGTON 3A 100V npn array

    Abstract: No abstract text available
    Text: MP6901 SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead. (SIP 12 Pin)


    OCR Scan     		PDF MP6901 DARLINGTON 3A 100V npn array

    TIP100

    Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		PDF TIP100/101 TIP105/106/107 O-220 TIP100 TIP101 TIP102 900MA TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102


    OCR Scan     		PDF TIP105/106/107 TIP106 TIP107 TIP105

    8DX54C

    Abstract: bdx54 bdx54a
    Text: BDX54/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage


    OCR Scan     		PDF BDX54/A/B/C BDX53, BDX53A, BDX53B BDX53C BDX54 BDX54A BDX54B 8DX54C 8DX54C bdx54 bdx54a

    Untitled

    Abstract: No abstract text available
    Text: BDX54/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX53, BDX53A, BDX53B and BDX53C respectively ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF BDX54/A/B/C BDX53, BDX53A, BDX53B BDX53C BDX54A BDX54B BDX54C BDX54

    MC7812Ck

    Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


    OCR Scan     		PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 MC7812Ck MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC

    NPN Transistor 2N3055 darlington

    Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


    OCR Scan     		PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 NPN Transistor 2N3055 darlington lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2