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    NPN TRANSISTOR W6 Search Results

    NPN TRANSISTOR W6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN TRANSISTOR W6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE352

    Abstract: w65 transistor RF POWER TRANSISTOR NPN
    Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment


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    NTE352 NTE352 175MHz. 175MHz 175MHz 175MHz, w65 transistor RF POWER TRANSISTOR NPN PDF

    NTE367

    Abstract: 45W UHF
    Text: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.


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    NTE367 512MHz NTE367 512MHz. 470MHz 470MHz 45W UHF PDF

    nte352

    Abstract: w65 transistor
    Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and


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    NTE352 NTE352 136-175MHz 175MHz 175MHz, w65 transistor PDF

    TRANSISTOR SMD MARKING CODE w6

    Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
    Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


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    PBHV8115T O-236AB) PBHV9115T. AEC-Q101 PBHV8115T TRANSISTOR SMD MARKING CODE w6 SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC PDF

    TRANSISTOR SMD MARKING CODE w6

    Abstract: npn transistor w6 PBHV8115T PBHV9115T
    Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 4 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


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    PBHV8115T O-236AB) PBHV9115T. AEC-Q101 PBHV8115T TRANSISTOR SMD MARKING CODE w6 npn transistor w6 PBHV9115T PDF

    silicon npn planar rf transistor sot 143

    Abstract: BFP67W
    Text: BFP67W Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


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    BFP67W D-74025 07-Nov-97 silicon npn planar rf transistor sot 143 BFP67W PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C R1 R1 R2 B 3 4


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    RN4987FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 R1 5 3 4 (E1) (B1) (C2) (E2) (B2)


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    RN4987FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2


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    RN4987FS PDF

    RN4987FS

    Abstract: No abstract text available
    Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 R1 5 3 4 (E1) (B1) (C2) (E2) (B2)


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    RN4987FS RN4987FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2


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    RN4987FS PDF

    RN4987FS

    Abstract: No abstract text available
    Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2


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    RN4987FS RN4987FS PDF

    BFP67W

    Abstract: Transistor C 1279
    Text: BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.


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    BFP67/BFP67R/BFP67W BFP67 BFP67R BFP67W D-74025 20-Jan-99 Transistor C 1279 PDF

    BFP67

    Abstract: BFP67R BFP67W "Small Signal Amplifiers"
    Text: BFP67/BFP67R/BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.


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    BFP67/BFP67R/BFP67W BFP67R BFP67 BFP67W D-74025 20-Jan-99 "Small Signal Amplifiers" PDF

    DSA0037427

    Abstract: pnp array SEMD13 npn transistor w6 IC-101
    Text: SEMD13 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=4.7kΩ, R2 =47kΩ)


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    SEMD13 OT666 EHA07176 OT666 Feb-26-2004 DSA0037427 pnp array SEMD13 npn transistor w6 IC-101 PDF

    marking 557 SOT143

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component


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    BFP67 BFP67R BFP67W 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143 marking 557 SOT143 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This


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    BFP67 BFP67R BFP67W OT-143 OT-143R OT-143 OT-143R OT-343 PDF

    marking 557 SOT143

    Abstract: No abstract text available
    Text: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This


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    BFP67 BFP67R BFP67W OT-143 OT-143R OT-143 OT-143R BFPW67 marking 557 SOT143 PDF

    0746

    Abstract: BFPW67 Transistor C 1279 BFP67W SOT-223 marking 717
    Text: BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    BFP67 BFP67R BFP67W 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143 0746 BFPW67 Transistor C 1279 BFP67W SOT-223 marking 717 PDF

    BFP67W

    Abstract: BFP67 BFP67R SOT-143 MARKING 557
    Text: BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    BFP67 BFP67R BFP67W 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 BFP67 OT-143 BFP67W SOT-143 MARKING 557 PDF

    cd 1191 cb

    Abstract: CD 1691 CB
    Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­


    OCR Scan
    BFP67/BFP67R/BFP67W BFP67 BFP67R BFP67W 20-Jan-99 cd 1191 cb CD 1691 CB PDF

    2SC4247

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)


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    2SC4247 SC-70 2SC4247 PDF

    npn transistor w6

    Abstract: No abstract text available
    Text: h -y > y 7. $ /Transistors UMW6N FMW6 t i UMW6N/FMW6 T /K i ï Epitaxial Planar NPN Silicon Transistor ¡ÜJSi&*ii*iÄI/RF Amplifier • 1 K /\‘ 7 - J I / K h>v > v : * 2 / D u a l Mini-Mold Transistor ^ - v T \H £E I/D im en sio n s Unit : mm) FMW6 UMW6N


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    1500M npn transistor w6 PDF

    CD 1691 CB

    Abstract: TELEFUNKEN O 670 VL sl2 357
    Text: Temic BFP67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


    OCR Scan
    BFP67W D-74025 07-Nov-97 CD 1691 CB TELEFUNKEN O 670 VL sl2 357 PDF