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    NPN VS PNP OR - VOLTAGE Search Results

    NPN VS PNP OR - VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    NPN VS PNP OR - VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E3S-vs1e42

    Abstract: E3S-VS1B42 infrared white black sensor omron e3s-vs1e4 E3S-VS5E42R E3S-VS1B43 E3S-VS14
    Text: E3S-VS E3S-VS Color Mark Sensor with Red or Green LED E3S-VS Rugged IP67 Color Mark Sensor • ■ ■ ■ 1 ms response time Detects a wide variety of color marks PNP or NPN output models Light-on/ Dark-on operation, wire selectable ■ Vertical and horizontal mounting styles


    Original     		PDF E3S-VS1E42 E3S-VS5E42G E3S-VS5E42R E3S-VS1B42 E3S-VS1B43 E3S-VS5B42R E3S-VS1C42 XS2F-D421-DC0-A XS2F-D421-GC0-A E3S-vs1e42 E3S-VS1B42 infrared white black sensor omron e3s-vs1e4 E3S-VS5E42R E3S-VS1B43 E3S-VS14

    E3S-vs1e42

    Abstract: E3S-VS1E4 e3s-vs omron e3s-vs1e4 E3S-vS1b4 E3S-VS1B43 E3S-VS1B42 E3S-VS5E42R datasheet infrared white black sensor E3S-VS5E42G
    Text: E3S-VS E3S-VS Color Mark Sensor with Red or Green LED E3S-VS Rugged IP67 Color Mark Sensor • ■ ■ ■ 1 ms response time Detects a wide variety of color marks PNP or NPN output models Light-on/ Dark-on operation, wire selectable ■ Vertical and horizontal mounting styles


    Original     		PDF E3S-VS1E42 E3S-VS5E42G E3S-VS5E42R E3S-VS1B42 E3S-VS1B43 E3S-VS5B42R E3S-VS1C42 XS2F-D421-DC0-A XS2F-D421-GC0-A E3S-vs1e42 E3S-VS1E4 e3s-vs omron e3s-vs1e4 E3S-vS1b4 E3S-VS1B43 E3S-VS1B42 E3S-VS5E42R datasheet infrared white black sensor E3S-VS5E42G

    Untitled

    Abstract: No abstract text available
    Text: Color Mark Sensor with Red or Green LED E3S-VS Rugged IP67 Color Mark Sensor • ■ ■ ■ 1 ms response time Detects a wide variety of color marks PNP or NPN output models Light-on/ Dark-on operation, wire selectable ■ Vertical and horizontal mounting styles


    Original     		PDF E3S-VS1E42 E3S-VS5E42G E3S-VS5E42R E3S-VS1B42 E3S-VS1B43 E3S-VS5B42R E3S-VS1C42 XS2F-D421-DC0-A XS2F-D421-GC0-A

    40841

    Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
    Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C 40841 40841 MOSFET CA3096AE CA3096 CA3096AM CA3096AM96 CA3096CE CA3096E

    40841

    Abstract: 40841 MOSFET 3096A CA3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 40841 MOSFET 3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent

    CA3096

    Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
    Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096AE 40841 MOSFET CA3096AM96

    CA3096

    Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096AM CA3096AM96

    40841 MOSFET

    Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 MOSFET 2158D CA3096 CA3096E equivalent CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096E

    A.4 SOT363-6

    Abstract: NPN/PNP transistor 2SA1037AK 2SC2412K W4601DW pnp hfe 120
    Text: W4601DW Dual Epitaxial Planer Transistor 2 3 Features: 1 6 5 Tr2 Tr1 * Both a 2SA1037AK chip and 2SC2412K chip in a SOT-363 4 5 1 2 4 3 SOT-363 SC-88 6 PNP+NPN Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage NPN PNP VCEO 50 -50 Vdc Collector-Base Voltage


    Original     		PDF W4601DW 2SA1037AK 2SC2412K OT-363 OT-363 SC-88) A.4 SOT363-6 NPN/PNP transistor W4601DW pnp hfe 120

    Untitled

    Abstract: No abstract text available
    Text: W4601DW Dual Epitaxial Planer Transistor * “G” Lead Pb -Free 2 3 Features: 1 6 5 Tr2 Tr1 * Both a 2SA1037AK chip and 2SC2412K chip in a SOT-363 4 5 1 2 4 3 SOT-363(SC-88) 6 PNP+NPN Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage NPN


    Original     		PDF W4601DW 2SA1037AK 2SC2412K OT-363 OT-363 SC-88)

    Untitled

    Abstract: No abstract text available
    Text: W4601DW Dual Epitaxial Planer Transistor 2 3 Features: 1 6 5 Tr2 Tr1 * Both a 2SA1037AK chip and 2SC2412K chip in a SOT-363 4 5 1 2 4 3 SOT-363 SC-88 6 PNP+NPN Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage NPN PNP VCEO 50 -50 Vdc Collector-Base Voltage


    Original     		PDF W4601DW 2SA1037AK 2SC2412K OT-363 OT-363 SC-88) 05-Sep-2011

    g75p

    Abstract: Baumer switch Transistor - NP 100 S35L Baumer electric switch 34M16 transistor bk 28
    Text: My-Com precision switches My-Com precision switches My-Com H activating force 30 grams / cN 50 grams / cN 75 grams / cN 100/250 grams / cN electrical data max. AC voltage max. switch. current AC max. DC voltage max. switch. current DC activating force NPN 75 grams


    Original     		PDF D250/80 H75/80 G75N80/L G75P80/L G75N/S35L G75P/S35L L75N80/L L75P80/L g75p Baumer switch Transistor - NP 100 S35L Baumer electric switch 34M16 transistor bk 28

    sil relay

    Abstract: 150K resistor PNP Relay Driver 4N29 4N30 4N31 4N32 4N33 MCT5200 CONN2
    Text: prev 1 of 2 next Fully Tested AXIS TEN PRODUCTS S Date: 28 AUG 07 Serial No: 0708V Test: Industrial Building Block Tested & Certified by: RoHS - Yes TEN www.axisten.co.uk Voltage Level Detector, Version: ATP4/2 General Description Features • Easy to use


    Original     		PDF

    Darlington pair IC with 15 Amp

    Abstract: disadvantages of capacitor 150 watt amplifier advantages and disadvantages PNP DARLINGTON SINK DRIVER 500ma darlington pair transistor 1A power Junction FET advantages and disadvantages sr004 amplifier advantages and disadvantages linear regulator application
    Text: Linear Regulator Output Structures by Kieran OÕMalley Choosing a linear regulator for an application involves more than looking for the part with the lowest dropout voltage or lowest cost. Although IC manufacturers promote regulators with very low dropout voltages, these are often the most expensive part in


    Original     		PDF

    npn darlington transistor 150 watts

    Abstract: 100 amp npn darlington power transistors 150 watt amplifier advantages and disadvantages 7 amps pnp transistor darlington pair transistor PNP DARLINGTON SINK DRIVER 10 amp npn darlington power transistors Darlington npn 2 amp CS8121 CS8129
    Text: SR004AN/D Linear Regulator Output Structures Kieran O’Malley ON Semiconductor 2000 South County Trail East Greenwich, RI 02818 http://onsemi.com APPLICATION NOTE Choosing a linear regulator for an application involves more than looking for the part with the lowest dropout voltage or lowest


    Original     		PDF SR004AN/D r14525 npn darlington transistor 150 watts 100 amp npn darlington power transistors 150 watt amplifier advantages and disadvantages 7 amps pnp transistor darlington pair transistor PNP DARLINGTON SINK DRIVER 10 amp npn darlington power transistors Darlington npn 2 amp CS8121 CS8129

    transistor smd npn ag

    Abstract: SIEMENS SMD TRANSISTOR smd transistor fh MRS sot23
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS ing, the emitter-base voltage VEB pnp is about 0.65 V, the reference voltage Vref about 1.3 V. The voltage drop V (I) is thus fixed at about 0.65 V within the operating range. Margarete Deckers ● Lothar Musiol ● Achim Renner


    Original     		PDF

    SICK D-79183

    Abstract: D-79183 D-79183 waldkirch sick optic typ WL 9 sick WL DOS-1204-G OBS-W24 d 79183 AG D-79183 SICK D-79183 waldkirch
    Text: 23.08.1999 12:42 Uhr Seite 1 The design is also user-friendly, which is proved by the easily accessible terminal chambers, the rotatable plug connection, easy alignment of the sensors thanks to visible red light and the different supply voltages, including two


    Original     		PDF D-79183 SICK D-79183 D-79183 waldkirch sick optic typ WL 9 sick WL DOS-1204-G OBS-W24 d 79183 AG D-79183 SICK D-79183 waldkirch

    Untitled

    Abstract: No abstract text available
    Text: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage


    Original     		PDF NJX1675PDR2G NJX1675P/D

    NJX1675PDR2G

    Abstract: No abstract text available
    Text: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage


    Original     		PDF NJX1675PDR2G NJX1675P/D NJX1675PDR2G

    ca3096

    Abstract: CA3096AE
    Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C CA3096. ca3096 CA3096AE

    ca3096

    Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
    Text: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096A. CA3096C ca3096 thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays

    ca3096

    Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
    Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096A CA3096A, CA3096, CA3096C CA3096. ca3096 CA3096AE 639 TRANSISTOR PNP CA3096E

    CA3096

    Abstract: No abstract text available
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096