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    NPN ZG Search Results

    NPN ZG Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    NPN ZG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking zg

    Abstract: PBSS4320T PBSS5320T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES


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    PDF PBSS4320T SCA76 R75/02/pp10 transistor marking zg PBSS4320T PBSS5320T

    free transistor equivalent book

    Abstract: free all transistor equivalent book transistor marking zg sot23 transistor marking ZG
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4320T 20 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and


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    PDF M3D088 PBSS4320T SCA74 613514/01/pp12 free transistor equivalent book free all transistor equivalent book transistor marking zg sot23 transistor marking ZG

    PBSS4320T

    Abstract: PBSS5320T transistor marking zg
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and


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    PDF PBSS4320T R75/02/pp10 PBSS4320T PBSS5320T transistor marking zg

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat and


    Original
    PDF PBSS4320T R75/02/pp10

    2N3855

    Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3855 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860

    BF180

    Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
    Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­


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    PDF BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    PDF BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B

    bdl 40

    Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
    Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor


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    PDF BFG480W BFG480W SCA60 04/00/02/pp1 bdl 40 l43 transistor transistor marking 2d ghz 9335 895

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


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    PDF D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3

    bfg67

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors


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    PDF BFG67; BFG67/X; BFG67/XR BFG67/XR BFG67 BFG67/X SCA60 bfg67

    BFP91A

    Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
    Text: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features


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    PDF bbS3T31 BFP91A OT173 OT173X BFQ23C. OT173. BFP91A BFP91A NPN PHILIPS BFQ23C SOT173

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors bb53T31 0031477 00T tM APX Product specification NPN 6 GHz wideband transistor BFP91A N AMER PHILIPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes. It features


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    PDF bb53T31 BFP91A OT173 OT173X BFQ23C.

    transistor smd zG

    Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
    Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband


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    PDF OT143 BFG17A MSB014 OT143. 711062fci 711062b 7110A2L transistor smd zG npn zg SMD Transistor zG TRANSISTOR 610 smd

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • ! bb53T31 0031568 675 U APX _Product_specification NPN 5 GHz wideband transistor ^ BFQ53 N DESCRIPTION AMER PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF bb53T31 BFQ53 BFQ52.

    transistor zg

    Abstract: F689K BF689 zg transistor
    Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION


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    PDF BF689K F689K SB034 transistor zg BF689 zg transistor

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and


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    PDF bb53T31 BFR92 BFT92. bbS3131 00B5157 bS3T31 -------------BFR92

    transistor marking zg

    Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
    Text: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general


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    PDF CMXT2222A OT-26 150mA, 15nnA OT-26 06-January transistor marking zg npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor

    Transistor BSX 62-16

    Abstract: No abstract text available
    Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3


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    PDF 023Sb05 BSX62 ------------------------------------BSX63 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 060218-X63-C Transistor BSX 62-16

    TRANSISTOR c 5578 B

    Abstract: 603 transistor npn
    Text: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is


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    PDF BFP90A OT173and OT173X TRANSISTOR c 5578 B 603 transistor npn

    BFQ65

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz


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    PDF QQ31S BFQ65 BFQ65

    bfg91a

    Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
    Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in


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    PDF G031233 BFG91A bfg91a transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290

    transistor P1P

    Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
    Text: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and


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    PDF bbS3T31 BFR92 BFT92. transistor P1P BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p

    BFG195

    Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
    Text: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband


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    PDF bbS3T31 0D313M4 BFG195 BFG195 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor