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    NPT SEMICONDUCTOR Search Results

    NPT SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPT SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGA25N120ANTD

    Abstract: IGBT FGA25N120ANTD 25C312
    Text: FGA25N120ANTD 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction


    Original     		PDF FGA25N120ANTD FGA25N120ANTD IGBT FGA25N120ANTD 25C312

    FGA25N120ANTD

    Abstract: IGBT Transistor 1200V, 25A FGA25N120 induction heat resonant fast recovery diode 600v 5A HIGH VOLTAGE DIODE for microwave ovens igbt 1200V 40A igbt 600V IGBT 200A 1200V application induction heating 25C312
    Text: FGA25N120ANTD 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction


    Original     		PDF FGA25N120ANTD FGA25N120ANTD IGBT Transistor 1200V, 25A FGA25N120 induction heat resonant fast recovery diode 600v 5A HIGH VOLTAGE DIODE for microwave ovens igbt 1200V 40A igbt 600V IGBT 200A 1200V application induction heating 25C312

    FGA25N120ANTD

    Abstract: FGA25N120 HIGH VOLTAGE DIODE for microwave ovens FGA25N120AN igbt for HIGH POWER induction heating 25C312
    Text: FGA25N120ANTD 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction


    Original     		PDF FGA25N120ANTD FGA25N120ANTD FGA25N120 HIGH VOLTAGE DIODE for microwave ovens FGA25N120AN igbt for HIGH POWER induction heating 25C312

    IGBT 200A 1200V application induction heating

    Abstract: FGA15N120ANTD HIGH VOLTAGE DIODE for microwave ovens igbt for induction heating F109
    Text: FGA15N120ANTD / FGA15N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120ANTD/FGA15N120ANTD IGBT 200A 1200V application induction heating HIGH VOLTAGE DIODE for microwave ovens igbt for induction heating F109

    FGA15N120

    Abstract: FGA15N120ANTD igbt fga15n120antd
    Text: FGA15N120ANTD tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120ANTD FGA15N120 igbt fga15n120antd

    FGA15N120ANTD

    Abstract: IGBT 200A 1200V application induction heating
    Text: FGA15N120ANTD tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120ANTD IGBT 200A 1200V application induction heating

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGA50N100BNTD2

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGL60N100BNTD O-264

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers


    Original     		PDF FGA50N100BNTD

    FGA50N100BNTD2

    Abstract: IGBT welder circuit
    Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 IGBT welder circuit

    FGA15N120ANTD

    Abstract: igbt fga15n120antd FGA15N120 F109 IGBT 40 A FGA15N120AN
    Text: FGA15N120ANTD / FGA15N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120ANTD/FGA15N120ANTD igbt fga15n120antd FGA15N120 F109 IGBT 40 A FGA15N120AN

    Untitled

    Abstract: No abstract text available
    Text: FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA25N120ANTDTU

    FGA15N120

    Abstract: microwave oven fast recovery diode IGBT 200A 1200V application induction heating
    Text: FGA15N120ANTD tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120ANTD FGA15N120ANTDTU FGA15N120 microwave oven fast recovery diode IGBT 200A 1200V application induction heating

    FGA25N120ANTD

    Abstract: IGBT FGA25N120ANTD FGA25N120
    Text: September, 2006 FGA25N120ANTD tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA25N120ANTD FGA25N120ANTD IGBT FGA25N120ANTD FGA25N120

    Untitled

    Abstract: No abstract text available
    Text: FGA15N120ANTD / FGA15N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120ANTD/FGA15N120ANTD

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGL60N100BNTD O-264

    FGA25N120ANTD

    Abstract: FGA25N120 F109 FGA25N120ANTD-F109 IGBT FGA25N120ANTD 25C312
    Text: July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA25N120ANTD/FGA25N120ANTD FGA25N120ANTD FGA25N120 F109 FGA25N120ANTD-F109 IGBT FGA25N120ANTD 25C312

    Untitled

    Abstract: No abstract text available
    Text: FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low Saturation Voltage: VCE sat , typ = 1.9 V @ IC = 15 A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTDTU

    RG 2006 10A 600V

    Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
    Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers


    Original     		PDF FGA50N100BNTD FGA50N100BNTD RG 2006 10A 600V ups active power easy 600 igbt 1000v 10A FGA50N100BN

    Untitled

    Abstract: No abstract text available
    Text: FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA25N120ANTD

    FGA25N120ANTD

    Abstract: FGA25N120 FGA25N120ANTD-F109 HIGH VOLTAGE DIODE for microwave ovens igbt 1200V 40A F109 25C312
    Text: July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT


    Original     		PDF FGA25N120ANTD/FGA25N120ANTD FGA25N120ANTD FGA25N120 FGA25N120ANTD-F109 HIGH VOLTAGE DIODE for microwave ovens igbt 1200V 40A F109 25C312

    Untitled

    Abstract: No abstract text available
    Text: July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction


    Original     		PDF FGA25N120ANTD/FGA25N120ANTD

    FGA25N120ANTD

    Abstract: FGA25N120 IGBT FGA25N120ANTD FGA25N120ANT FGA25N120ANTD-F109
    Text: FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V  @ IC = 25 A and TC = 25C Using Fairchild 's proprietary trench design and advanced NPT


    Original     		PDF FGA25N120ANTD/FGA25N120ANTD FGA25N120ANTD FGA25N120 IGBT FGA25N120ANTD FGA25N120ANT FGA25N120ANTD-F109

    FGA15N120

    Abstract: FGA15N120ANTD
    Text: FGA15N120ANTD / FGA15N120ANTD_F109 1200 V, 15 A NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low Saturation Voltage: VCE sat , typ = 1.9 V  @ IC = 15 A and TC = 25C Using Fairchild 's proprietary trench design and advanced NPT


    Original     		PDF FGA15N120ANTD FGA15N120