Untitled
Abstract: No abstract text available
Text: POR009 Effective: 5/11/2015 PREFERRED DISTRIBUTOR PRICE LIST PORTABLE CORD Yellow 90 Yellow 90 Yellow 105 Super Vu-Tron Supreme Gauge SOOW SJOOW SOOW SJOOW SOOW SEOOW SJEOOW 18/2 455.11 412.66 NS NS NS 455.11 412.66 18/3 590.57 484.71 618.07 506.94 NS 590.57
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POR009
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Untitled
Abstract: No abstract text available
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C - JULY 1996 - REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
1056-Word
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Untitled
Abstract: No abstract text available
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C - JULY 1996 - REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
1056-Word
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TMS320C50DU
Abstract: No abstract text available
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
TMS320C50DU
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Acc 2089
Abstract: TMP320C50KGD TMP320LC50KGD
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
Acc 2089
TMP320C50KGD
TMP320LC50KGD
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Untitled
Abstract: No abstract text available
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
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Acc 2089
Abstract: TMP320C50KGD TMP320LC50KGD 446526 Texas instruments military products
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
Acc 2089
TMP320C50KGD
TMP320LC50KGD
446526
Texas instruments military products
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SPRS030
Abstract: 224K-word XDS510PP dsp processor Architecture of TMS320C5X
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
SPRS030
224K-word
XDS510PP
dsp processor Architecture of TMS320C5X
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7404
Abstract: No abstract text available
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
7404
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Acc 2089
Abstract: TMP320C50KGD TMP320LC50KGD SPRS030
Text: TMP320C50KGD, TMP320LC50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C − JULY 1996 − REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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PDF
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
Acc 2089
TMP320C50KGD
TMP320LC50KGD
SPRS030
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E U C V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (t*) 30 ns 35 ns 40 ns
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V52C4256
V52C4256
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Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4256 60 PRELIMINARY 80 10 70 ns 80 ns 100 ns 20 ns 25 ns 25 ns 40 ns 50 ns 70 Max. RAS Access Time, tp^c 60 ns Max. CAS Access Time, <tQAC) 15 ns Max. Column Address Access Time, (tAA)
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V52C4256
V52C4256
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Untitled
Abstract: No abstract text available
Text: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )
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V52C4256
V52C4256
GG030bS
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yrm 620
Abstract: No abstract text available
Text: ijf r VITEUC V53C104B HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max RAS Access Time, t„ . _ 1 RAC' 60 ns 70 ns 80 ns Max Column Address Access Time, (*CAA) 30 ns 35 ns 4 0 ns Min Fast Page Mode Cyde Time, (tpç)
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V53C104B
60/60L
V53C104B
70/70L
80/80L
V53C104BL
V53C104B-80
20-pln
yrm 620
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91000S-60
Abstract: siemens POWER SUPPLY KS 630 S 91000S-70 91000S-80 511000
Text: S IE M E N S 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time
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91000S/-60/-70/-80
E35bQ5
91000S-60
siemens POWER SUPPLY KS 630 S
91000S-70
91000S-80
511000
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DS1020-015
Abstract: No abstract text available
Text: DS1020 DALLAS SEMICONDUCTOR DSI 020 Programmable 8-Bit Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay C [2 Q/PO r 3 P1 [ 4 P2 [ 5 P3 [ 6 P4 C7 IN • Models with 0.15 ns, 0.25 ns, 0.5 ns, 1 ns, and 2 ns steps E • Programmable using 3-wire serial port or 8-bit parallel
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DS1020
16-pin
DS1020
DS1020S.
DS1020-015
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)
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91000S/-60/-70/-80
flS35b05
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CY7C245
Abstract: CY7C245-25PC CY7C245L45WC cy7c245-35dmb 7c245 cy7c245-35pc cy7c245-45wmb CY7C245-35QMB CY7C245-45pc CY7C245L-45WC
Text: CY7C245 CYPRESS SEMICONDUCTOR Reprogrammable 2048 x 8 Registered PROM Features • Windowed for reprogrammability • C M O S for optimum speed/power • High speed — 25 ns max set-up — 12 ns clock to output • Low power — 330 mW commercial for —35 ns, —45 ns
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CY7C245
CY7C245L-45PC
CY7C245L-45WC
CY7C245-45PC
CY7C245-45SC
CY7C245-45WC
CY7C245-45LC
CY7C245-45WMB
CY7C245-45LMB
CY7C245-45DMB
CY7C245
CY7C245-25PC
CY7C245L45WC
cy7c245-35dmb
7c245
cy7c245-35pc
CY7C245-35QMB
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91000S-70
Abstract: HYM91000S60
Text: SIEMENS 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)
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91000S/-60/-70/-80
91000S-70
HYM91000S60
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DIP18
Abstract: TDA4672 luminance delay
Text: Philips Semiconductors Product specification Picture Signal Improvement PSI circuit with enhanced peaking function JDA4672 FEATURES • Luminance signal delay from 20 ns to 1100 ns (minimum step 45 ns) • Selectable luminance signal peaking with symmetrical
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JDA4672
DIP18
TDA4672
luminance delay
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XT150
Abstract: xt90
Text: in tj 28F001BX-T/28F001BX-B 1M 128K X 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time
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28F001BX-T/28F001BX-B
32-Lead
28F001BX
0154bHb
XT150
xt90
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SMD marking s07
Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
Text: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge
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39S16400/800/160CT-8/-10
fl235b05
SMD marking s07
smd marking YB
smd marking T22
smd code Yj 33
1t211
39S16400
JEM AC3
ml 721 T1-1
P-TSOPII-44
SP 1191
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video luminance delay peaking overshoot
Abstract: TDA4670 IEC 337-2
Text: Preliminary specification Philips Semiconductors Video Products Picture signal improvement PSI circuit TDA4670 Supersedes data o f August 1990 FEATURES • Luminance signal delay from 20 ns up to 1100 ns (minimum step 45 ns) • Luminance signal peaking with
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TDA4670
video luminance delay peaking overshoot
TDA4670
IEC 337-2
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Untitled
Abstract: No abstract text available
Text: VITELIC C0RP w 45E ì> E =5305310 OOOOblS b H V I T V53C104H UL TRA-HIGH PERFORMANCE, LOW POWER 256K X 4 B I T FAST PAGE MODE CMOS DYNAMIC RAM VITELIC ADVANCE INFORMA TION 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA)
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V53C104H
45/45L
50/50L
55/55L
60/60L
V53C104HL
0000b32
T-46-23-17
26/20-pin
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