1N4148
Abstract: 4148
Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.
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DO-35
OD-27
150/C)
1N4148
4148
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diode 4148
Abstract: T 4148 diode IN 4148 diode 4151 IN 4148 diode LL4150 LL4148-1 4148 4151 diode datasheet 4448
Text: LL 4148, LL 4150, LL 4151, LL 4448 Surface Mount Silicon Planar Diodes Silizium-Planar-Dioden für die Oberflächenmontage ±0.1 0.3 3.5±0.1 0.3 1.45 ±0.1 Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung
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OD-80
DO-213AA
150/C)
diode 4148
T 4148
diode IN 4148
diode 4151
IN 4148 diode
LL4150
LL4148-1
4148
4151
diode datasheet 4448
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Untitled
Abstract: No abstract text available
Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.
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DO-35
OD-27
150/C)
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diode t 4148
Abstract: 4148 T 4148 diode 4148 diode IN 4148 1N4148 IN 4148 diode t 4148 diode 4148 diode 4151
Text: Diotec 1N 4148, 1N 4150, 1N 4151, 1N 4448, Small Signal Si-Diodes Si-Allzweck-Dioden Nominal current Nennstrom Ø 1.9 150 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V max Glass case Glasgehäuse DO-35 SOD-27 Ø 0.56 max Dimensions / Maße in mm
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DO-35
OD-27
diode t 4148
4148
T 4148
diode 4148
diode IN 4148
1N4148
IN 4148 diode
t 4148 diode
4148 diode
4151
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Untitled
Abstract: No abstract text available
Text: 1N 4150 Small-Signal Diode Fast Switching Rectifier Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data
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LL4150.
DO-35
200mA
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diode 648
Abstract: 1N4150 648 diode DIODE WITH SOD CASE
Text: L L 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the DO-35 case with the type designation 1N4150. Mechanical Data Case: MiniMELF Glass Case SOD-80
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DO-35
1N4150.
OD-80)
200mA
200mA,
diode 648
1N4150
648 diode
DIODE WITH SOD CASE
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618 diode
Abstract: LL4150
Text: 1N 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data Case: DO-34, DO-35 Glass Case
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LL4150.
DO-34,
DO-35
200mA
618 diode
LL4150
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Untitled
Abstract: No abstract text available
Text: , Line. J.E.IIE. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Damper diode BY428 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction.
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BY428
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45N120
Abstract: IXSH45N120 45N120 ixys
Text: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 70 A = 3V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200
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45N120
O-247
45N120
IXSH45N120
45N120 ixys
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Untitled
Abstract: No abstract text available
Text: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat = 1400 V = 70 A = 4V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1400 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1400 V VGES Continuous
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35N140A
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Varistor 271
Abstract: No abstract text available
Text: HC SERIES Date: 07/22/2010 S66ZOV131HC MAIDA STYLE NUMBER MAIDA ITEM NUMBER Electrical Specifications 01-1879 Physical Specifications Continuous AC Voltage 130 VAC Lead Style 059L1 Continuous DC Voltage 175 VDC X Nominal 0.394 in. 200 uA X Tolerance Low Varistor Voltage Limit
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S66ZOV131HC
059L1
E321173
Varistor 271
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Untitled
Abstract: No abstract text available
Text: Analog Standard Cell OSC40 - CMOS Crystal Oscillator 40MHz DATA SHEET Process Description C35 0.35µm OSC40 is a quartz crystal oscillator for a frequency range from 20 MHz to 40 MHz. ESD Protection (typ. 200 Ohm) and Load Capacitors (typ. 3pF) are included in the cell.
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OSC40
40MHz
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HC49
Abstract: OSC40
Text: Analog Standard Cell OSC40 - CMOS Crystal Oscillator 40MHz DATA SHEET Process Description C35 0.35 m OSC40 is a quartz crystal oscillator for a frequency range from 20 MHz to 40 MHz. ESD Protection (typ. 200 Ohm) and Load Capacitors (typ. 3pF) are included in the cell.
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OSC40
40MHz
17-Mar-08
HC49
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Untitled
Abstract: No abstract text available
Text: Data Sheet N0604N R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
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N0604N
N0604N
R07DS0850EJ0100
N0604N-S19-AY
O-220
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mosfet ir 840
Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
Text: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65
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OCR Scan
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FBA50BA50
FCA50BC50
FBA75BA50
FCA75BC50
SF100AA50
SF150AA50
SF100AA20
SF150AA20
SF200AA20
FRS200AA
mosfet ir 840
sqd65bb75
250A darlington transistor
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150 o % #f 1 l $ I c I ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV
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OCR Scan
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2N4150
MiL-PRF-19500/394
MIL-PRF-19500/394C
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PDF
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Untitled
Abstract: No abstract text available
Text: 4150 SERIES FEMALE P.C.B CONN. 2 . 5 4 * 2 . 5 4 m m STRAIGHT TYPE REV DATE DESCRIPTION A 0 1 .0 8 .1 3 NEW RELEASE ECN NO. NAME TINA MATERIAL HOUSING : THERMOPLASTIC U L 9 4 V -0 HOUSING COLOR : BLACK TERMINAL : COPPER ALLOY TERMINAL PLATED : SEE ORDER INFORMATION
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35
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OCR Scan
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DO-35
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PDF
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Diode 4148 MINIMELF
Abstract: No abstract text available
Text: LL 4148, LL 4150, LL 4151, LL 4448, Si-Allzweck-Dioden für die Oberflächenmontage Surface Mount Small Signal Si-Diodes 150 niA Nominal current Nennstrom 50. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung SOD-80 Glass case MiniMELF
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OCR Scan
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OD-80
R0D1RS14
Diode 4148 MINIMELF
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TOPD30
Abstract: TOPD300 InGaAs Photodiode 1550nm IR LASER 1550nm 07255 thermistor 054
Text: T—41—50 TOSHIBA -CLASER/FBR O P T I O OIE D Bi ^0^7255 GülblDO T • TOSfc. TOSHIBA PIN PHOTODIODE TOPD300 Features • • • • • • • InGaAs PIN Structure Mesa Type Chip-carrier Wavelength 0.8~1.6/tm High Speed 0.5ns Max Low Dark Current 10nA Max
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OPD300
T-41-50
1000o
50/125pm)
TOPD30
TOPD300
InGaAs Photodiode 1550nm
IR LASER 1550nm
07255
thermistor 054
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 48 5 5 4 5 2 SS INTERNATIONAL RECTIFIER m T| 4 8 5 5 ^ 2 QQQS11S S~|~~ 55 C 05115 Data Sheet No. PD-2.081 INTERNATIONAL RECTIFIER IO R - T 0 3 - A J 55HQ SERIES 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic
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OCR Scan
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QQQS11S
5000Hz,
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PDF
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thermistor 054
Abstract: No abstract text available
Text: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max
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OCR Scan
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OPD320
1550n
1000o
50/125pm)
thermistor 054
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IXSH35N140A
Abstract: 53al bj 113
Text: □ IXYS : Advanced data v CES High Voltage, High speed IGBT IX S H 35N 140A 1400 V IX S H 35 N 1 3 5A 1350 V ^C25 VCE sat 70 A 70 A 4V 4V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions v* CHS Tj = 25°C to 150°C v* CGR ^ v GES Continuous
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OCR Scan
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IXSH35N140A
IXSH35N135A
35N140A
35N135A
O-247
0003TÃ
53al
bj 113
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mosfet ir 840
Abstract: 250A darlington transistor SF200AA20 FBA50BA50 FCA75BC50 SF150AA50 sqd65bb75 FBA75BA SF150AA20 FBA75BA50
Text: SANSHA ELECTRIC liF G 37E CO l i 7 ^ ^ 1 2 4 3 «- D Ü Q O O O S 3> I I • t —y — — I M O iin r m m h S F E T S / T R rnn A i i i N i S T I S £ f 1J n I S i l i- T O R Id Voss A V Sw itching Tim e ns
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OCR Scan
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FBA50BA50
FCA50BC50
FBA75BA50
FCA75BÃ
SF100AA50
SF150AA50
SF100AA20
SF150AA20
FRS200AA
FRS200BA
mosfet ir 840
250A darlington transistor
SF200AA20
FCA75BC50
sqd65bb75
FBA75BA
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PDF
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