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    NTE211 Price and Stock

    NTE Electronics Inc NTE211

    Transistor, bjt, pnp,75V V(Br)Ceo,1A I(C),to-202 Rohs Compliant: Yes |Nte Electronics NTE211
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE211 Bulk 1
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    NTE Electronics Inc NTE2117

    16K Dynamic RAM(DRAM) - 200ns - 16-lead DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2117 3
    • 1 $13.63
    • 10 $12.39
    • 100 $9.68
    • 1000 $8.67
    • 10000 $8.67
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    NTE Electronics Inc NTE21128

    EPROM - 128K - 250ns - 28-lead DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE21128 2
    • 1 $36.02
    • 10 $31.79
    • 100 $26.12
    • 1000 $24.76
    • 10000 $24.76
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    NTE Electronics Inc NTE2114

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NTE2114 3
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    Component Electronics, Inc NTE2114 5
    • 1 $11.54
    • 10 $11.54
    • 100 $8.65
    • 1000 $7.5
    • 10000 $7.5
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    NTE211 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE211 NTE Electronics Silicon Complementary Transistor General Purpose Output & Driver Original PDF
    NTE211 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, General Purpose Output & Driver, Pkg Style TO202 Scan PDF
    NTE211 NTE Electronics Transistors - Bi-Polar Scan PDF
    NTE21128 NTE Electronics Integrated Circuit NMOS, 128K (16K x 8) UV EPROM Original PDF
    NTE21128 NTE Electronics Microprocessor and Memory IC Pinouts Scan PDF
    NTE2114 NTE Electronics Integrated Circuit MOS, Static 4K RAM, 300ns Original PDF
    NTE2117 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF

    NTE211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE21128

    Abstract: No abstract text available
    Text: NTE21128 Integrated Circuit NMOS, 128K 16K x 8 UV EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user


    Original     		PDF NTE21128 NTE21128 250ns

    NTE2117

    Abstract: No abstract text available
    Text: NTE2117 Integrated Circuit 16K Dynamic Random Access Memory RAM Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed


    Original     		PDF NTE2117 NTE2117 16-Lead Note18. Note19.

    NTE211

    Abstract: NTE210
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE211 NTE210

    NTE2114

    Abstract: No abstract text available
    Text: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for


    Original     		PDF NTE2114 300ns NTE2114 225mW 300ns

    NTE210

    Abstract: NTE211
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack­ age designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE210 NTE211

    Untitled

    Abstract: No abstract text available
    Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO| C 5| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128


    OCR Scan     		PDF NTE8255 40-Lead NTE21128 26-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead

    NTE65101

    Abstract: NTE21128 NTE21256 NTE8255 GJA9
    Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns


    OCR Scan     		PDF NTE8255 40-Lead NTE21128 28-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead GJA9

    NTE130

    Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
    Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)


    OCR Scan     		PDF 27MHz, NTE197) T0220 NTE196) 27MHz) T039HS NTE130 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211

    Untitled

    Abstract: No abstract text available
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead

    NTE130

    Abstract: NTE199 NPN RF Amplifier NTE241
    Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)


    OCR Scan     		PDF 27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241

    NTE130

    Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
    Text: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector


    OCR Scan     		PDF T-33-01 NTE192A) T092HS 27MHZ, 226MP NTE226 T0237 45MHZ NTE199) 50MHZ) NTE130 NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128