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    NTE231 Price and Stock

    NTE Electronics Inc NTE2311

    Bipolar Transistor, Npn, 450V, To-218; Transistor Polarity:Npn; Collector Emitter Voltage Max:450V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-Rohs Compliant: Yes |Nte Electronics NTE2311
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    Newark NTE2311 Bulk 1
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    Bristol Electronics NTE2311 5 1
    • 1 $11.25
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    • 100 $11.25
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    NTE2311 2
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    Quest Components NTE2311 40
    • 1 $19
    • 10 $19
    • 100 $11.4
    • 1000 $11.4
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    NTE2311 4
    • 1 $15
    • 10 $11.25
    • 100 $11.25
    • 1000 $11.25
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    NTE2311 1
    • 1 $14.6633
    • 10 $14.6633
    • 100 $14.6633
    • 1000 $14.6633
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    TME NTE2311 1 1
    • 1 $15.5
    • 10 $12.3
    • 100 $11.1
    • 1000 $11.1
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    NTE Electronics Inc NTE2319

    Bipolar Transistor, Npn, 450V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:450V; Continuous Collector Current:15A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Transition Frequency:- Rohs Compliant: Yes |Nte Electronics NTE2319
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    Newark NTE2319 Bulk 1
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    TME NTE2319 4 1
    • 1 $9.6
    • 10 $7.63
    • 100 $6.86
    • 1000 $6.86
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    NTE Electronics Inc NTE2314

    Transistor, bjt, pnp,50V V(Br)Ceo,15A I(C),to-218Var Rohs Compliant: Yes |Nte Electronics NTE2314
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    Newark NTE2314 Bulk 1
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    Bristol Electronics NTE2314 3 1
    • 1 $11.2
    • 10 $11.2
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    Quest Components NTE2314 11
    • 1 $11.43
    • 10 $5.715
    • 100 $5.715
    • 1000 $5.715
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    NTE2314 2
    • 1 $15
    • 10 $10
    • 100 $10
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    NTE Electronics Inc NTE2317

    Transistor, Bipolar, Npn, 450V, 15A, To-218-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:450V; Continuous Collector Current:15A; Power Dissipation:105W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2317
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    Bristol Electronics NTE2317 2 1
    • 1 $11.2
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    NTE Electronics Inc NTE2312

    Transistor NPN Silicon 700V IC=8A TO-220 Case Tf=0.7us High Voltage High Speed Switch
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    Onlinecomponents.com NTE2312 30
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    • 100 $3.91
    • 1000 $3.16
    • 10000 $2.92
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    Bristol Electronics NTE2312 5
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    NTE2312 4 1
    • 1 $6.72
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    Quest Components NTE2312 4
    • 1 $9.8775
    • 10 $4.9388
    • 100 $4.9388
    • 1000 $4.9388
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    NTE2312 4
    • 1 $5.964
    • 10 $4.97
    • 100 $4.97
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    NTE2312 3
    • 1 $9
    • 10 $6
    • 100 $6
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    Find more NTE231 price and stock on Findchips.com

    NTE231 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE231 NTE Electronics Silicon Controlled Rectifier (SCR) TV Deflection Circuit Original PDF
    NTE2310 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE2311 NTE Electronics Silicon NPN Transistor High Voltage, High Speed Switch Original PDF
    NTE2312 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE2313 NTE Electronics Silicon NPN Transistor High Speed Switch Original PDF
    NTE2314 NTE Electronics Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) Original PDF
    NTE2315 NTE Electronics Silicon NPN Transistor Fast Switching Power Darlington Original PDF
    NTE2316 NTE Electronics Silicon NPN Transistor Fast Switching Power Darlington Original PDF
    NTE2317 NTE Electronics Silicon NPN Transistor High Voltage Fast Switching Power Darlington Original PDF
    NTE2318 NTE Electronics Silicon NPN Transistor High Voltage, High Speed Switch Original PDF
    NTE2319 NTE Electronics Silicon NPN Transistor High Voltage, High Speed Power Switch Original PDF

    NTE231 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCR 200A 500V

    Abstract: NTE231
    Text: NTE231 Silicon Controlled Rectifier SCR TV Deflection Circuit Features: D CTV 110° − CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V


    Original     		PDF NTE231 SCR 200A 500V NTE231

    NPN Transistor 1.5A 700V

    Abstract: No abstract text available
    Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection


    Original     		PDF NTE2318 NTE2318 NPN Transistor 1.5A 700V

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: NTE2314 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF NTE2314 Freq20M

    NTE2314

    Abstract: No abstract text available
    Text: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.


    Original     		PDF NTE2304 NTE2314) NTE2304 10IB1 10IB2 NTE2314

    NTE2317

    Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: NTE2312 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)700 I(C) Max. (A)8 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF NTE2312

    SCR 60A 500V

    Abstract: SCR 200A 500V SCR 200A 700V
    Text: NTE231 Silicon Controlled Rectifier SCR TV Deflection Circuit Features: D CTV 110° – CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V


    Original     		PDF NTE231 SCR 60A 500V SCR 200A 500V SCR 200A 700V

    NTE2312

    Abstract: 220v 2a transistor
    Text: NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE2312 NTE2312 220v 2a transistor

    Untitled

    Abstract: No abstract text available
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317

    547 relay ic

    Abstract: NTE2314 "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: NTE2314 Silicon PNP Transistor High Current, High Speed Switch Compl to NTE2304 Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.


    Original     		PDF NTE2314 NTE2304) NTE2314 10IB1 10IB2 547 relay ic "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A

    NPN Transistor VCEO 1000V

    Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
    Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:


    Original     		PDF NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A

    nte2317

    Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317 150mA automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor

    NTE2319

    Abstract: No abstract text available
    Text: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated


    Original     		PDF NTE2319 NTE2319 800ns

    400V switching transistor

    Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
    Text: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast


    Original     		PDF NTE2315 NTE2315 400VC 500mA, 400V switching transistor npn darlington 400v 15a NPN Transistor 10A 400V Displays

    automotive ignition

    Abstract: NTE2316 105w vce 500v NPN Transistor
    Text: NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls.


    Original     		PDF NTE2316 NTE2317 140mA, automotive ignition NTE2316 105w vce 500v NPN Transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    NTE135A

    Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
    Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.


    Original     		PDF NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159

    NTE2314

    Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
    Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo


    OCR Scan     		PDF NTE397) NTE396) NTE375) T0220 T0218 NTE2314) NTE2306) NTE2314 NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ