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    NTE2386 Price and Stock

    NTE Electronics Inc NTE2386

    POWER FIELD-EFFECT TRANSISTOR, 6.2A I(D), 600V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE2386 1
    • 1 $70.8143
    • 10 $70.8143
    • 100 $70.8143
    • 1000 $70.8143
    • 10000 $70.8143
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    NTE2386 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE2386 NTE Electronics MOSFET N-Channel Enhancemen Mode, High Speed Switch Original PDF

    NTE2386 Datasheets Context Search

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    N-Channel Enhancemen-Mode MOSFET

    Abstract: NTE2386
    Text: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power


    Original     		PDF NTE2386 NTE2386 N-Channel Enhancemen-Mode MOSFET

    Untitled

    Abstract: No abstract text available
    Text: NTE2386 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)


    Original     		PDF NTE2386