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    NTE Electronics Inc NTE3311

    Igbt, Single, N-Ch, 600V, 25A, To-247; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:3V; Power Dissipation:150W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: No |Nte Electronics NTE3311
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    NTE3311 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE3311 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF

    NTE3311 Datasheets Context Search

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    NTE3311

    Abstract: NTE331
    Text: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3311 NTE3311 NTE331 PDF

    NTE3311

    Abstract: NTE331
    Text: NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3311 NTE3311 NTE331 PDF