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    NTE332 Search Results

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    NTE332 Price and Stock

    NTE Electronics Inc NTE3320

    Single Igbt, 600V, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:-; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE3320
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    Newark NTE3320 Bulk 1
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    NTE Electronics Inc NTE3322

    Single Igbt, 900V, 60A; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:200W; Collector Emitter Voltage Max:900V; No. Of Pins:3Pins; Operating Temperature Max:-; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE3322
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    Newark NTE3322 Bulk 1
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    NTE Electronics Inc NTE332

    Transistor PNP Silicon 100V IC=15A TO-220 Case Compl To NTE331
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    Onlinecomponents.com NTE332 19
    • 1 -
    • 10 $3.05
    • 100 $2.4
    • 1000 $2.13
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    Bristol Electronics NTE332 3
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    NTE332 2
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    Quest Components NTE332 9
    • 1 $6.84
    • 10 $3.42
    • 100 $3.42
    • 1000 $3.42
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    NTE332 2
    • 1 $3.948
    • 10 $3.948
    • 100 $3.948
    • 1000 $3.948
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    NTE332 1
    • 1 $6
    • 10 $6
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    NTE332 1
    • 1 $7.5
    • 10 $5
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    TME NTE332 58 1
    • 1 $3.13
    • 10 $2.49
    • 100 $2.24
    • 1000 $2.24
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    NTE Electronics Inc NTE3323

    INSULATED GATE BIPOLAR TRANSISTOR, 25A I(C), 1200V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE3323 1
    • 1 $23.4
    • 10 $23.4
    • 100 $23.4
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    TME NTE3323 9 1
    • 1 $34.1
    • 10 $27.1
    • 100 $27.1
    • 1000 $27.1
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    NTE332 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE332 NTE Electronics Silicon Complementary Transistor Audio Power Amp, Switch Original PDF
    NTE332 NTE Electronics Bipolar Transistors Scan PDF
    NTE332 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp Switch, Pkg Style TO220 Scan PDF
    NTE3320 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3321 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3322 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3323 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE332MCP NTE Electronics Bipolar Transistors Scan PDF

    NTE332 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE3321

    Abstract: No abstract text available
    Text: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3321 NTE3321

    NTE3323

    Abstract: No abstract text available
    Text: NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3323 NTE3323

    074c

    Abstract: NTE3322
    Text: NTE3322 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO3PBL Features: D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3322 -20A/s 074c NTE3322

    NTE3321

    Abstract: No abstract text available
    Text: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3321 NTE3321

    NTE3322

    Abstract: No abstract text available
    Text: NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3322 NTE3322

    NTE3320

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320 NTE3320

    NTE3320

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320 NTE3320

    Untitled

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320

    NTE331

    Abstract: NTE332
    Text: NTE331 NPN & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.


    Original     		PDF NTE331 NTE332 NTE331 NTE332

    NTE332

    Abstract: NTE3323
    Text: NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3323 NTE332 NTE3323

    NTE3322

    Abstract: No abstract text available
    Text: NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3322 NTE3322

    Untitled

    Abstract: No abstract text available
    Text: NTE3321 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3321

    HIGH VOLTAGE DIODE for microwave ovens

    Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
    Text: 1994-2012.qxp:QuarkCatalogTempNew 9/11/12 8:55 AM Page 1994 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Comparators, Amplifiers, Diodes, Transient Voltage Suppressors TVS and IGBTs Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.


    Original     		PDF NTE834 NTE922M NTE943M NTE109 NTE525 NTE506 DO-41 DO-41 HIGH VOLTAGE DIODE for microwave ovens NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


    Original     		PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    NTE135A

    Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
    Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.


    Original     		PDF NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159

    332MCP

    Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
    Text: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.


    OCR Scan     		PDF 297MP NTE297 NTE297) T0202 NTE307) 300MP NTE300 27MHz) NTE332) 332MCP NTE307 27MHz rf transmitter NTE332 NTE297 NTE300 T072 T092