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    NTE Electronics Inc NTE342

    RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE342 8
    • 1 $16.185
    • 10 $16.185
    • 100 $16.185
    • 1000 $16.185
    • 10000 $16.185
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    NTE342 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE342 NTE Electronics Silicon NPN Transistor RF Power Output (P O = 6W, 175MHz) Original PDF

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    NTE342

    Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
    Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)


    Original     		PDF NTE342 175MHz) NTE342 175MHz 100mA, 600mW, 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w

    NTE342

    Abstract: No abstract text available
    Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)


    Original     		PDF NTE342 175MHz) NTE342 175MHz 100mA, 600mW,

    Untitled

    Abstract: No abstract text available
    Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)


    Original     		PDF NTE342 175MHz) NTE342 175MHz 100mA, 600mW,