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NTE Electronics Inc NTE6093 Rectifier Diodes, common Cathode, schottky,60V V(Rrm),to-247Var \|Nte Electronics NTE6093
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Newark	NTE6093	Bulk	1		1	1 $2.42 10 $2.42 100 $2.42 1000 $2.42 10000 $2.42	Buy Now
NTE Electronics Inc NTE601 Forward Reference Diode,610Mv V(Fm),axial-B \|Nte Electronics NTE601
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Newark	NTE601	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE6068 Rectifier, 70A, 800V, Do-5; Repetitive Peak Reverse Voltage:800V; Average Forward Current:70A; Forward Voltage Max:1.25V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes \|Nte Electronics NTE6068
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Newark	NTE6068	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	NTE6068	Bulk	1	3 Weeks	1	1 $19.17 10 $15.9 100 $14.57 1000 $14.57 10000 $14.57	Buy Now
Onlinecomponents.com	NTE6068		1			1 $18.38 10 $16.71 100 $12.73 1000 $11.52 10000 $11.52	Buy Now
NTE Electronics Inc NTE6071 Rectifier Diode,1.6Kv V(Rrm),do-5 Rohs Compliant: Yes \|Nte Electronics NTE6071
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE6071	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE6060 Standard Diode, 70A, 400V, Do-5; Repetitive Peak Reverse Voltage:400V; Average Forward Current:70A; Forward Voltage Max:1.25V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes \|Nte Electronics NTE6060
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE6060	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	NTE6060		2		1	1 $12 10 $12 100 $12 1000 $12 10000 $12	Buy Now

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NTE60 Datasheets (78)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE60	NTE Electronics	NPN Silicon Complementary Transistor High Power Audio, Disk Head Positioner for Linear Applications	Original	PDF
NTE6002	NTE Electronics	Silicon Power Rectifier Diode, 40 Amp	Original	PDF
NTE6003	NTE Electronics	Silicon Power Rectifier Diode, 40 Amp	Original	PDF
NTE6004	NTE Electronics	Silicon Power Rectifier Diode, 40 Amp	Original	PDF
NTE6005	NTE Electronics	Silicon Power Rectifier Diode, 40 Amp	Original	PDF
NTE6006	NTE Electronics	Fast Recovery Rectifier, 40A, 200ns	Original	PDF
NTE6007	NTE Electronics	Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.	Original	PDF
NTE6008	NTE Electronics	Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.	Original	PDF
NTE6009	NTE Electronics	Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.	Original	PDF
NTE601	NTE Electronics	Silicon Varistor Temperature Compensating Diode	Original	PDF
NTE6010	NTE Electronics	Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A.	Original	PDF
NTE6011	NTE Electronics	Fast Recovery Rectifier, 40A, 200ns	Original	PDF
NTE6013	NTE Electronics	Silicon Industrial Rectifier 20 Amp	Original	PDF
NTE6020	NTE Electronics	Industrial Silicon Rectifier, 60A	Original	PDF

NTE6021	NTE Electronics	Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A.	Original	PDF
NTE6022	NTE Electronics	Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A.	Original	PDF
NTE6023	NTE Electronics	Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A.	Original	PDF
NTE6026	NTE Electronics	Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A.	Original	PDF
NTE6027	NTE Electronics	Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A.	Original	PDF
NTE6030	NTE Electronics	Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A.	Original	PDF

NTE60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:	Original	NTE5906, NTE5907, NTE5980 NTE6005	PDF
NTE6087 Abstract: avalanche diode 30A 30A 45V SCHOTTKY BARRIER RECTIFIER Text: NTE6087 Dual Schottky Barrier Silicon Rectifier 45V, 30 Amp, TO220 Features: D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V	Original	NTE6087 NTE6087 avalanche diode 30A 30A 45V SCHOTTKY BARRIER RECTIFIER	PDF
diode schottky 1000V 10a Abstract: 20A SCHOTTKY BARRIER RECTIFIER NTE6080 diode 1000V 20a Schottky diode TO220 Text: NTE6080 Silicon Schottky Barrier Rectifier 60V, 10 Amp, 2−Lead TO220 Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guard−Ring for Stress Protection D Low Forward Voltage	Original	NTE6080 NTE6080 150mA diode schottky 1000V 10a 20A SCHOTTKY BARRIER RECTIFIER diode 1000V 20a Schottky diode TO220	PDF
NTE5980 Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode" Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:	Original	NTE5906, NTE5907, NTE5980 NTE6005 500Aal-Mechanical NTE5906 NTE5907 NTE6005 "Power rectifier Diode"	PDF
Untitled Abstract: No abstract text available Text: NTE600 Silicon Varistor Temperature Compensating Diode Features: D Temperature Compensation Applications D Bias Compensation Applications D Hermetically Sealed Miniature Glass Package Absolute Maximum Ratings; Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V	Original	NTE600 150mA	PDF
Untitled Abstract: No abstract text available Text: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency D Guarding for Stress Protection	Original	NTE6088 NTE6088	PDF
NTE6047 Abstract: NTE6046 Text: NTE6046 & NTE6047 Silicon Power Rectifier Diode, 85 Amp Features: D Short Reverse Recovery Time D Low Stored Charge D Available in Cathode–to–Case NTE6046 or Anode–to–Case (NTE6047) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85A	Original	NTE6046 NTE6047 NTE6046) NTE6047) NTE6047 NTE6046	PDF
NTE6036 Abstract: NTE6037 Text: NTE6036 & NTE6037 Silicon Power Rectifier Diode, 85 Amp Features: D Short Reverse Recovery Time D Low Stored Charge D Available in Cathode–to–Case NTE6036 or Anode–to–Case (NTE6037) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85A	Original	NTE6036 NTE6037 NTE6036) NTE6037) NTE6036 NTE6037	PDF
NTE6086 Abstract: NTE6088 diode schottky 1000V 10a Text: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection	Original	NTE6088 NTE6086 NTE6088 diode schottky 1000V 10a	PDF
NTE6080 Abstract: No abstract text available Text: NTE6080 Silicon Schottky Barrier Rectifier Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guard–Ring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature	Original	NTE6080 NTE6080 150mA	PDF
NTE6032 Abstract: NTE6033 Text: NTE6032 & NTE6033 Silicon Power Rectifier Diode, 40 Amp Features: D Fast Recovery Time D Low Stored Charge D Available in Cathode–to–Case NTE6032 or Anode–to–Case (NTE6033) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A	Original	NTE6032 NTE6033 NTE6032) NTE6033) NTE6032 NTE6033	PDF
NTE6076 Abstract: NTE6077 NTE6078 NTE6079 NTE6070 NTE6071 NTE6074 NTE6075 Text: NTE6070 thru NTE6079 Industrial Silicon Rectifiers 85 Amp, DO5 Description: The NTE6070 thru NTE6079 series of 85 Amp power rectifiers are stud mounted DO5 packages. Because the silicon junction is carefully fitted within a glass to−metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions.	Original	NTE6070 NTE6079 NTE6079 NTE6076 NTE6077 NTE6078 NTE6071 NTE6074 NTE6075	PDF
NTE6083 Abstract: No abstract text available Text: NTE6083 Schottky Barrier Rectifier 45V, 10 Amp, 2−Lead TO220 Features: D Low Power Loss, High Efficiency D High Current Capability, Low VF D High Surge Capacity Applications: D Low Voltage, High Frequency Inverters D Free Wheeling Applications D Polarity Protection Applications	Original	NTE6083 NTE6083	PDF
NTE6008 Abstract: NTE6010 NTE6007 NTE6009 NTE6006 NTE6011 Text: NTE6006 thru NTE6011 Fast Recovery Rectifier, 200ns 40 Amp, DO5 Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete line of fast	Original	NTE6006 NTE6011 200ns NTE6011 150ns 250kHz. NTE6006, NTE6007* NTE6008 NTE6010 NTE6007 NTE6009	PDF

NTE5980 Abstract: NTE5906 NTE5907 NTE6005 Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics:	Original	NTE5906, NTE5907, NTE5980 NTE6005 50rmal NTE5906 NTE5907 NTE6005	PDF
NTE6092 Abstract: No abstract text available Text: NTE6092 Silicon Schottky Barrier Rectifier Features: D Guarding for Stress Protection D Low Forward Voltage D +125°C Operating Junction Temperature Maximum and Electrical Ratings: Maximum Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V	Original	NTE6092 100mA NTE6092	PDF
NTE6074 Abstract: NTE6077 NTE6078 NTE6079 NTE6071 NTE6070 NTE6075 NTE6076 Text: NTE6070 thru NTE6079 85 Amp Stud Mount Rectifiers Description: The NTE6070 thru NTE6079 series of 85 Amp power rectifiers are stud mounted DO–5 packages. Because the silicon junction is carefully fitted within a glass to–metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions.	Original	NTE6070 NTE6079 NTE6079 NTE6074 NTE6077 NTE6078 NTE6071 NTE6075 NTE6076	PDF
NTE6086 Abstract: diode schottky 1000V 10a Text: NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection	Original	NTE6086 NTE6086 diode schottky 1000V 10a	PDF
NTE6082 Abstract: No abstract text available Text: NTE6082 Silicon Schottky Barrier Rectifier Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature	Original	NTE6082 NTE6082	PDF
NTE6084 Abstract: No abstract text available Text: NTE6084 Silicon Rectifier Schottky Barrier Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardring for Stress Protection D Low Forward Voltage	Original	NTE6084 NTE6084 100kHz	PDF
NTE6081 Abstract: No abstract text available Text: NTE6081 Silicon Schottky Barrier Rectifier Description: The NTE6081 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature	Original	NTE6081 NTE6081	PDF
NTE6008 Abstract: sonar NTE6006 NTE6007 NTE6009 NTE6010 NTE6011 Text: NTE6006 thru NTE6011 Fast Recovery Rectifier, 40A, 200ns Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete line of fast	Original	NTE6006 NTE6011 200ns NTE6011 150ns 250kHz. NTE6006, NTE6007* NTE6008 sonar NTE6007 NTE6009 NTE6010	PDF
NTE6091 Abstract: No abstract text available Text: NTE6091 Silicon Schottky Barrier Rectifier Features: D Guarding for Stress Protection D Low Forward Voltage D +125°C Operating Junction Temperature Maximum and Electrical Ratings: Maximum Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V	Original	NTE6091 100mA NTE6091	PDF
NTE601 Abstract: Varistor Temperature Compensating Diode Text: NTE601 Silicon Varistor Temperature Compensating Diode Features: D High reliability planar chip and glass sealing D Low IR D Large PD Absolute Maximum Ratings: TA = +25°C unless otherwise specified Maximum Forward Current, IFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA	Original	NTE601 150mA 150mW NTE601 Varistor Temperature Compensating Diode	PDF

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NTE60 Datasheets (78)

NTE60 Datasheets Context Search

Untitled

NTE6087

diode schottky 1000V 10a

NTE5980

Untitled

Untitled

NTE6047

NTE6036

NTE6086

NTE6080

NTE6032

NTE6076

NTE6083

NTE6008

NTE5980

NTE6092

NTE6074

NTE6086

NTE6082

NTE6084

NTE6081

NTE6008

NTE6091

NTE601