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    NVD2955 Price and Stock

    onsemi NVD2955T4G

    MOSFET P-CH 60V 12A DPAK
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    NVD2955T4G Digi-Reel 1
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    NVD2955T4G Cut Tape
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    Avnet Americas NVD2955T4G Reel 0 Weeks, 2 Days 421
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    Flip Electronics NVD2955T4G 22,500
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    Flip Electronics NVD2955T4G

    MOSFET P-CH 60V 12A DPAK
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    DigiKey NVD2955T4G Bulk 400
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    Others NVD2955T4G

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    Chip 1 Exchange NVD2955T4G 13,000
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    NVD2955 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVD2955T4G On Semiconductor NVD2955 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF

    NVD2955 Datasheets Context Search

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    nt 2955g

    Abstract: 2955g
    Text: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original     		PDF NTD2955, NVD2955 NTD2955/D nt 2955g 2955g

    nt2955g

    Abstract: nt 2955g
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original     		PDF NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g

    nt2955g

    Abstract: nt 2955g 2955G
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original     		PDF NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G

    nt2955g

    Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original     		PDF NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G ntd2955g NTP2955G NVD2955T4G NTD2955T

    Untitled

    Abstract: No abstract text available
    Text: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original     		PDF NTD2955, NVD2955 NTD2955/D