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    NW SMD TRANSISTOR Search Results

    NW SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NW SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    817 Optocoupler

    Abstract: 4 pin optocoupler 817 optocoupler 817 817 OPTO-coupler 4 pin optocoupler C 817 optocoupler A 817 optocoupler C 817 optocoupler C 814 CNY 42 optocoupler smd Optocoupler 201
    Text: Avago Technologies Optoisolation Product Part Number System Application Bulletin 102 Introduction The following information is provided to assist in the understanding of the Avago Technologies Optocouplers part number nomenclature identification. This document is intended as a general guide to the partnumbering system employed by each family.


    Original     		SO-16 EN60747 5989-0341EN AV01-0683EN 817 Optocoupler 4 pin optocoupler 817 optocoupler 817 817 OPTO-coupler 4 pin optocoupler C 817 optocoupler A 817 optocoupler C 817 optocoupler C 814 CNY 42 optocoupler smd Optocoupler 201 PDF

    smd marking nw

    Abstract: SmD TRANSISTOR nw MOSFET marking smd MOSFET nw "Field Effect Transistor" 2SK2159 NW smd transistor SMD TRANSISTOR mosfet marking pd marking nw vs319
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK2159 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 Features +0.1 2.50-0.1 Capable of drive gate with 1.5 V Small RDS on RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1


    Original     		2SK2159 OT-89 smd marking nw SmD TRANSISTOR nw MOSFET marking smd MOSFET nw "Field Effect Transistor" 2SK2159 NW smd transistor SMD TRANSISTOR mosfet marking pd marking nw vs319 PDF

    MARKING SMD npn TRANSISTOR R45

    Abstract: PMSM 200kw FSBB30CH60C smd transistor marking r14
    Text: User Guide for FEBSPM3SPM45_M01MTCA Motion SPM3/45H Evaluation Board Compatible with: SPM3V2_V4 & SPM45H Modules Featured Fairchild Product: FNB41560 SPM45H SPM Direct questions or comments about this evaluation board to: “Worldwide Direct Support” /


    Original     		FEBSPM3SPM45 M01MTCA SPM3/45H SPM45H FNB41560 MARKING SMD npn TRANSISTOR R45 PMSM 200kw FSBB30CH60C smd transistor marking r14 PDF

    kds6j

    Abstract: BC548 TRANSISTOR SMD NA smd SCHEMATIC DIAGRAM REVERSE KWH METER hcf4066 L7805 TO220 BC548 smd BZ 55C 16 SMD GDM093 e-Meter
    Text: UM0221 User manual STEVAL-IPE007V1: Single-phase energy meter with tamper detection based on ST7lite2x Introduction This user manual provides a description of a single chip energy meter, STEVAL-IPE007V1, with tamper detection. The meter fulfills IEC 61036:1996 + A1:2000 static meter


    Original     		UM0221 STEVAL-IPE007V1: STEVAL-IPE007V1, kds6j BC548 TRANSISTOR SMD NA smd SCHEMATIC DIAGRAM REVERSE KWH METER hcf4066 L7805 TO220 BC548 smd BZ 55C 16 SMD GDM093 e-Meter PDF

    coil gold detector circuit diagram

    Abstract: saw resonator r2632 B3530 Transmitter with SAW-based Oscillator ANT015 SAW101 T101-T104 Ceramic Capacitors T104 Siemens ofw real fm transmitter circuit diagram
    Text: TELEFUNKEN Semiconductors ANT015 UHF Wireless Data Transceiver Issue: 04.95 ANT015 TELEFUNKEN Semiconductors Table of Contents Introduction .1


    Original     		ANT015 17TR2100: coil gold detector circuit diagram saw resonator r2632 B3530 Transmitter with SAW-based Oscillator ANT015 SAW101 T101-T104 Ceramic Capacitors T104 Siemens ofw real fm transmitter circuit diagram PDF

    3phase MOSFET INVERTER

    Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
    Text: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.


    Original     		Power247TM, 3phase MOSFET INVERTER 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw PDF

    RTL28

    Abstract: arm cortex a9 mpcore CMOS-9HD CB90L VHDL code for ADC and DAC SPI with FPGA 24KEc cortex a9 qfp ARM1136J Ethernet-MAC ic renesas ARM926EJ-STM
    Text: ASIC Technology Handbook www.renesas.eu ARM, ARM7TDMI-S, ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 and ARM Cortex are trademarks of ARM Ltd. 4KEc, 24KEm, 24KEc, 24KEf and 74Kf are trademarks of MIPS Technolgies. All other product, brand, or trade names used in this


    Original     		ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 24KEm, 24KEc, 24KEf R05CS0001ED0101 RTL28 arm cortex a9 mpcore CMOS-9HD CB90L VHDL code for ADC and DAC SPI with FPGA 24KEc cortex a9 qfp ARM1136J Ethernet-MAC ic renesas ARM926EJ-STM PDF

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


    Original     		S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet PDF

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 PDF

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703 PDF

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF

    PQ7L2020BP

    Abstract: GP2Y0A21 SHARP GP2Y0A21YK0F infrared distance sensor GP2Y0A21YK0F GP2Y0A700K0F GM1WA55321A GA1A2S100SS GP2Y0A02YK0F PT100MF0MP crosses GPS196HCZSF
    Text: Selector Guide Electronic Components Group Lighting • LED Modules • LED Drivers • Ambient Light Sensors • Blue Laser Diodes Power • Photocouplers • Phototriacs Sensors • Photointerrupters • Optical System Devices • Emitters/Detectors Pack performance into the smallest dimensions


    Original     		SMA08000A PQ7L2020BP GP2Y0A21 SHARP GP2Y0A21YK0F infrared distance sensor GP2Y0A21YK0F GP2Y0A700K0F GM1WA55321A GA1A2S100SS GP2Y0A02YK0F PT100MF0MP crosses GPS196HCZSF PDF

    SMD TQFP microcontroller NEC

    Abstract: CMOS-9HD CB10VX CMOS-N5 ARM1136J PBGA 376 vhdl code pdf cisc processor CMOS-10HD ARM11 mpcore MCM NAND
    Text: ASIC T echn o l o gy H an dbo o k 2009 1 ARM, ARM7TDMI-S, ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 and ARM Cortex are trademarks of ARM Ltd. All other product, brand, or trade names used in this pamphlet are the trademarks or registered trademarks of their respective owners.


    Original     		ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 A17023EE9V0PF00 SMD TQFP microcontroller NEC CMOS-9HD CB10VX CMOS-N5 ARM1136J PBGA 376 vhdl code pdf cisc processor CMOS-10HD ARM11 mpcore MCM NAND PDF

    QT28

    Abstract: No abstract text available
    Text: CLASS B+ PRODUCTS HIGH RELIABILITY HYBRID CRYSTAL CLOCK OSCILLATORS 2.5 to 5.0Vdc - 15kHz to 350MHz Q-TECH CORPORATION Features • Made in the USA • ECCN: EAR99 • DFARS 252-225-7014 Compliant: Electronic Component Exemption • Broad frequency range from 15kHz to 350MHz


    Original     		15kHz 350MHz EAR99 MIL-PRF-55310/9, QT122 QT128) QT101, QT106, QT28 PDF

    FTSH-105-01-F-DV-K

    Abstract: Ampire LCD earthquake Detection systems BL-5B sensor LDR ldr sensor ZF1-20-01-T-WT smd TRANSISTOR code b6 weather monitoring USING MICROCONTROLLER led ldr sensor
    Text: UM0857 User manual Smart monitoring system STEVAL-IFS014V1 and STEVAL-IFS015V1, based on the STM32x Introduction This document explains the functioning of the "smart monitoring system" and also serves as a quick reference manual to operate the system. The smart monitoring system works on


    Original     		UM0857 STEVAL-IFS014V1 STEVAL-IFS015V1, STM32x FTSH-105-01-F-DV-K Ampire LCD earthquake Detection systems BL-5B sensor LDR ldr sensor ZF1-20-01-T-WT smd TRANSISTOR code b6 weather monitoring USING MICROCONTROLLER led ldr sensor PDF

    QT188

    Abstract: QT192
    Text: CLASS B+ PRODUCTS HIGH RELIABILITY HYBRID CRYSTAL CLOCK OSCILLATORS 2.5 to 5.0Vdc - 15kHz to 350MHz Q-TECH CORPORATION Features • Made in the USA • ECCN: EAR99 • DFARS 252-225-7014 Compliant: Electronic Component Exemption • Broad frequency range from 15kHz to 350MHz


    Original     		15kHz 350MHz EAR99 MIL-PRF-55310/9, QT101 QPDS-0001, QT188 QT192 PDF

    TFK 548

    Abstract: TFK U 217 B IRM1010 SDVC
    Text: Package Outline Part Number Slimline SIP SMD Features Page Mb/s IrDA compatible transceiver that supports data rates of 1 Mb/s down to 9.6 Kb/s. LED power select function in­ cluded. Compact package size: 4.0 mm in height, 9.6 mm in width and 4.5 mm in depth. Selectable LED trans­


    OCR Scan     		IRM1010 IRM1020 IRM1030 1-888-lnfineon IRM1010 TFK 548 TFK U 217 B SDVC PDF

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


    OCR Scan     		1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor PDF

    report on colpitts oscillator

    Abstract: TRANSISTOR SMD L82 smd transistor N33 B69812-N1897-A320 Colpitts Wideband VCO Circuit Schematic and PCB Layout 3ip2 Frequency Filters downconvertor 1890MHZ BFG505
    Text: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. . . . . . ^ ,Ca IOn ref3° 1890 M Hz LO W PO W E R DOW NCONVERTER W IT H 110 M Hz I.F . Introduction This application note describes the performance of a 1890 MHz low voltage 3 volt


    OCR Scan     		B69812-N1897-A320) BC807 BFG505X BFG505 BB131 report on colpitts oscillator TRANSISTOR SMD L82 smd transistor N33 B69812-N1897-A320 Colpitts Wideband VCO Circuit Schematic and PCB Layout 3ip2 Frequency Filters downconvertor 1890MHZ BFG505 PDF

    CLC207AI

    Abstract: THERMALLOY 2268b CLC205 CLC207
    Text: Low Distortion Wideband Op Amp APPLICATIONS: • fast, precision A/D conversion • wide dynamic range IF amps • test waveform generation • VCO drivers • DDS postamps • radar/communication receivers • line drivers FEATURES typical : • -8 0 /-8 5 d B c 2nd/3rd harmonics at 20MHz


    OCR Scan     		CLC207 CLC207 20MHz CLC207. CLC207AI THERMALLOY 2268b CLC205 PDF

    TRANSISTOR SMD L82

    Abstract: report on colpitts oscillator siemens c35 terminal BFG520 B69812-N1897-A320 BB131 BC807 BFG505 BFG505X smd transistor JJ
    Text: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. Application report 1890 M H z L O W P O W E R D O W N C O N V E R T E R W IT H 110 M H z I .F . In tro d u c tio n T his application note describes the perform ance o f a 1890 M H z low voltage 3 volt


    OCR Scan     		L4-L11. B69812-N1897-A320) BC807 BFG505X BFG505 BB131 TRANSISTOR SMD L82 report on colpitts oscillator siemens c35 terminal BFG520 B69812-N1897-A320 BB131 BC807 BFG505 BFG505X smd transistor JJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		1x106rad HLX6228 1x101 1x109 32-Lead PDF

    900156

    Abstract: HX6228 smd a7 transistor
    Text: Honeywell Military & Space Products HX6228 128K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS’“ IV Silicon on Insulator SOI 0.7 |im Process (LeN= 0.55 |im) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		1x106 1x101 1x109 HX6228 32-Lead 40-Lead 125JC, 900156 HX6228 smd a7 transistor PDF