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    NX5315EK Search Results

    NX5315EK Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NX5315EK NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF
    NX5315EK-AZ California Eastern Laboratories NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications Original PDF

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    A1276

    Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These


    Original     		PDF NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon

    NX5315

    Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ
    Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:


    Original     		PDF NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:


    Original     		PDF NX5315