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    NX8350TS Search Results

    NX8350TS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    NX8350TS33-AZ Renesas Electronics Corporation 271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application Visit Renesas Electronics Corporation
    NX8350TS27-AZ Renesas Electronics Corporation 271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application Visit Renesas Electronics Corporation
    NX8350TS29-AZ Renesas Electronics Corporation 271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application Visit Renesas Electronics Corporation
    NX8350TS31-AZ Renesas Electronics Corporation 271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application Visit Renesas Electronics Corporation

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    NX8350TSxx

    Abstract: NX8350TS PX10160E 10 gb laser diode
    Text: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser


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    NX8350TS R08DS0025EJ0100 NX8350TS IEEE802 NX8350TSxx PX10160E 10 gb laser diode PDF