NXP BAV199 date code
Abstract: BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package
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M3D088
BAV199
613514/04/pp8
NXP BAV199 date code
BAV199 NXP marking code
diode smd marking jy
smd code marking WV
BAV199
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BAV199
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 PINNING MARKING • Plastic SMD package
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M3D088
BAV199
613514/04/pp8
BAV199
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Untitled
Abstract: No abstract text available
Text: PESD12VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in
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PESD12VS1ULD
OD882D
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: PESD15VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in
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PESD15VS1ULD
OD882D
AEC-Q101
61000-itions
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Untitled
Abstract: No abstract text available
Text: PESD12VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in
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PESD12VS1ULD
OD882D
AEC-Q101
61000-itions
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Untitled
Abstract: No abstract text available
Text: PESD15VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in
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PESD15VS1ULD
OD882D
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: D8 82D PMEG2005BELD SO 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Rev. 1 — 11 January 2012 Preliminary data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
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PMEG2005BELD
OD882D
AEC-Q101
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BAP65LX
Abstract: No abstract text available
Text: BAP65LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled Low diode capacitance
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BAP65LX
OD882T
sym006
BAP65LX
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BAP63LX
Abstract: SMD MARKING CODE M 4 Diode
Text: BAP63LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High speed switching for RF signals
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BAP63LX
OD882T
sym006
BAP63LX
SMD MARKING CODE M 4 Diode
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PDTC124XMB
Abstract: No abstract text available
Text: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA124XMB
DFN1006B-3
OT883B)
PDTC124XMB.
AEC-Q101
PDTC124XMB
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PDTA123YMB
Abstract: PDTC123YMB
Text: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC123YMB
DFN1006B-3
OT883B)
PDTA123YMB.
AEC-Q101
PDTA123YMB
PDTC123YMB
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PDTC124
Abstract: PDTC124XMB
Text: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA124XMB
DFN1006B-3
OT883B)
PDTC124XMB.
AEC-Q101
PDTC124
PDTC124XMB
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Untitled
Abstract: No abstract text available
Text: DF N1 60 8D -2 PMEG4020EPK 40 V, 2 A low VF MEGA Schottky barrier rectifier 11 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
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PMEG4020EPK
DFN1608D-2
OD1608)
AEC-Q101
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PMEG4002EL
Abstract: No abstract text available
Text: PMEG4002EL 40 V, 0.2 A low VF MEGA Schottky barrier rectifier Rev. 02 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
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PMEG4002EL
OD882
PMEG4002EL
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PDTC123YMB
Abstract: PDTA123YMB
Text: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC123YMB
DFN1006B-3
OT883B)
PDTA123YMB.
AEC-Q101
PDTC123YMB
PDTA123YMB
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PDTA143Z
Abstract: PDTA143ZMB PDTC143ZMB PDTA143
Text: 83B PDTC143ZMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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PDTC143ZMB
OT883B
PDTA143ZMB.
AEC-Q101
PDTA143Z
PDTA143ZMB
PDTC143ZMB
PDTA143
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PDTA143ZMB
Abstract: PDTC143ZMB
Text: 83B PDTC143ZMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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PDTC143ZMB
OT883B
PDTA143ZMB.
AEC-Q101
PDTA143ZMB
PDTC143ZMB
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Untitled
Abstract: No abstract text available
Text: 83B PDTC144EMB SO T8 NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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PDTC144EMB
OT883B
PDTA144EMB.
AEC-Q101
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IEC61643-321
Abstract: No abstract text available
Text: PESD5V0F1USF Extremely low capacitance unidirectional ESD protection diode Rev. 1 — 11 December 2012 Product data sheet 1. Product profile 1.1 General description Extremely low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
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DSN0603-2
OD962)
IEC61643-321
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Untitled
Abstract: No abstract text available
Text: SO D1 23W PTVSxS1UTR series High-temperature 400 W Transient Voltage Suppressor Rev. 1 — 11 October 2011 Product data sheet 1. Product profile 1.1 General description 400 W unidirectional Transient Voltage Suppressor TVS in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient
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OD123W
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smd transistor ja
Abstract: No abstract text available
Text: 83B PMZB420UN SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB420UN
DFN1006B-3
OT883B)
smd transistor ja
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Untitled
Abstract: No abstract text available
Text: 83B PMZB290UN SO T8 20 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB290UN
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKMB
DFN1006B-3
OT883B)
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NX3008NBKMB
Abstract: No abstract text available
Text: 83B NX3008NBKMB SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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NX3008NBKMB
DFN1006B-3
OT883B)
NX3008NBKMB
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