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    NXP MOSFET SOA DERATING Search Results

    NXP MOSFET SOA DERATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    NXP MOSFET SOA DERATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC60747-8

    Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158 IEC60747-8 nxp mosfet soa derating AN10273 iec60134

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 3 — 7 January 2013 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    A3028

    Abstract: 20000 watts power amplifier circuit diagrams csd18503 nxp mosfet soa derating
    Text: TPS2482 TPS2483 www.ti.com SLUSAW1 – DECEMBER 2012 36-V Hotswap Controller with Precision I2C Power Monitoring Check for Samples: TPS2482, TPS2483 FEATURES DESCRIPTION • • • The TPS2482 and TPS2483 provide hotswap control and precision monitoring for 9-V to 36-V applications.


    Original     		PDF TPS2482 TPS2483 TPS2482, 20-Pin TPS2483 16-bit A3028 20000 watts power amplifier circuit diagrams csd18503 nxp mosfet soa derating

    Untitled

    Abstract: No abstract text available
    Text: TPS2482 TPS2483 www.ti.com SLUSAW1 A – DECEMBER 2012 – REVISED MARCH 2013 36-V Hotswap Controller with Precision I2C Power Monitoring Check for Samples: TPS2482, TPS2483 FEATURES DESCRIPTION • • • The TPS2482 and TPS2483 provide hotswap control and precision monitoring for 9-V to 36-V applications.


    Original     		PDF TPS2482 TPS2483 TPS2482, 20-Pin TPS2483 16-bit

    Untitled

    Abstract: No abstract text available
    Text: TPS2482 TPS2483 www.ti.com SLUSAW1 A – DECEMBER 2012 – REVISED MARCH 2013 36-V Hotswap Controller with Precision I2C Power Monitoring Check for Samples: TPS2482, TPS2483 FEATURES DESCRIPTION • • • The TPS2482 and TPS2483 provide hotswap control and precision monitoring for 9-V to 36-V applications.


    Original     		PDF TPS2482 TPS2483 TPS2482, TPS2482 TPS2483 16-bit

    Untitled

    Abstract: No abstract text available
    Text: LM3017 www.ti.com SNOSC66C – MARCH 2012 – REVISED MARCH 2013 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES KEY SPECIFICATION • • • • 1 2 • • • • • • • • • • Fully Compliant to Thunderbolt Technology


    Original     		PDF LM3017 SNOSC66C 10-pin

    Untitled

    Abstract: No abstract text available
    Text: LM3017 www.ti.com SNOSC66C – MARCH 2012 – REVISED MARCH 2013 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES KEY SPECIFICATION • • • • 1 2 • • • • • • • • • • Fully Compliant to Thunderbolt Technology


    Original     		PDF LM3017 SNOSC66C