MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB950UPE
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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NX7002BKXB
DFN1010B-6
OT1216)
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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TRANSISTOR SMD MARKING CODE 1v
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB30XN
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE 1v
NXP SMD TRANSISTOR MARKING CODE s1
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smd diode marking 2U
Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB95XNE
DFN2020-6
OT1118)
smd diode marking 2U
smd diode marking codes 2U
smd diode code marking 2U
marking 2U 28 diode
DIODE smd marking 2U
diode SMD marking code 2u
2U marking code diode smd
smd diode marking 2U 40
marking 2U diode smd
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: PMDPB38UNE 20 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB38UNE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB56XN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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DFN2020-6
Abstract: No abstract text available
Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
DFN2020-6
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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g1 TRANSISTOR SMD MARKING CODE
Abstract: PMDPB55XP
Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench
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PMDPB55XP
OT1118
g1 TRANSISTOR SMD MARKING CODE
PMDPB55XP
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SOT1118
Abstract: PMDPB70XP NXP SMD TRANSISTOR MARKING CODE s1
Text: PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench
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PMDPB70XP
OT1118
SOT1118
PMDPB70XP
NXP SMD TRANSISTOR MARKING CODE s1
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PMDPB70EN
Abstract: No abstract text available
Text: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB70EN
DFN2020-6
OT1118)
PMDPB70EN
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Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKS
OT363
SC-88)
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TRANSISTOR SMD MARKING CODE 1P
Abstract: PMDPB28UN MOSFET TRANSISTOR SMD MARKING CODE NA
Text: PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB28UN
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE 1P
PMDPB28UN
MOSFET TRANSISTOR SMD MARKING CODE NA
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MOSFET TRANSISTOR SMD MARKING A1
Abstract: P-channel Trench MOSFET SOT1118
Text: PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using
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PMDPB65UP
OT1118
MOSFET TRANSISTOR SMD MARKING A1
P-channel Trench MOSFET
SOT1118
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marking code 1L
Abstract: NXP MARKING 1l
Text: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB42UN
DFN2020-6
OT1118)
marking code 1L
NXP MARKING 1l
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702 TRANSISTOR smd
Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage
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M3D088
BSR12
BSR12
MAM256
BSR12/C
ICP1020807
01-Jul-2011
702 TRANSISTOR smd
TRANSISTOR SMD MARKING CODE 702
702 TRANSISTOR smd SOT23
TRANSISTOR SMD 702 N
smd transistor marking B5
702 N smd transistor
TRANSISTOR SMD MARKING CODE LF
70.2 TRANSISTOR smd
702 k TRANSISTOR smd
702 transistor smd code
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138PS
OT363
SC-88)
AEC-Q101
771-BSS138PS115
BSS138PS
NXP SMD TRANSISTOR MARKING CODE s1
DIODE smd marking CODE NZ
MOSFET TRANSISTOR SMD MARKING CODE A1
NXP SMD mosfet MARKING CODE
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138PS
OT363
SC-88)
AEC-Q101
MOSFET TRANSISTOR SMD MARKING CODE A1
g1 TRANSISTOR SMD MARKING CODE
DIODE smd marking CODE NZ
NXP SMD TRANSISTOR MARKING CODE s1
BSS138PS
NXP SMD mosfet MARKING CODE
transistor SMD MARKING CODE nz
MOSFET TRANSISTOR SMD MARKING CODE 11
smd code marking Nz
smd transistor marking A1
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Untitled
Abstract: No abstract text available
Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138PS
OT363
SC-88)
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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PMCXB900UE
DFN1010B-6
OT1216)
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PDF
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Untitled
Abstract: No abstract text available
Text: GTL2002 2-bit bidirectional low voltage translator Rev. 8 — 19 August 2013 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation
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GTL2002
GTL2002
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Untitled
Abstract: No abstract text available
Text: SO T6 6 6 NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKV
OT666
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