NXP TRANSISTOR SMD 13 Search Results

NXP TRANSISTOR SMD 13 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NXP TRANSISTOR SMD 13 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor	PDF
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component	PDF
amplifier TRANSISTOR 12 GHZ Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927	PDF
C4532X7R1E475M Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf	PDF
BLF6G20-110 Abstract: BLF6G20LS-110 RF35 Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35	PDF
BLF6G10LS-135RN Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR	PDF
2360d Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
transistor j449 Abstract: SOT113 JESD625-A 001aam267 Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information	Original	BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 transistor j449 SOT113 JESD625-A 001aam267	PDF
Untitled Abstract: No abstract text available Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF10M6135; BLF10M6LS135 BLF10M6135	PDF
BLF6G10LS-135R Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d Text: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-135R BLF6G10LS-135R f4 smd transistor mobile rf power amplifier transistor RF35 2360d	PDF
Untitled Abstract: No abstract text available Text: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with	Original	PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA	PDF
PBSS5620PA Abstract: No abstract text available Text: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with	Original	PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA	PDF
TG-600PH-WH Abstract: smd transistor BC1 Text: UM10510 120 V AC 17 W dimmable demo board using the SSL2103 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2103, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This user manual describes a demo board for evaluating an AC mains	Original	UM10510 SSL2103 SSL2103, PAR38 SSL2103. TG-600PH-WH smd transistor BC1	PDF

capacitor 2200 uF Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750 Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.	Original	BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08	PDF
LED Driver aplications Abstract: Dimming LED aplications HER107 US1M smd m7 BZV55C12 Text: UM10507 SSL2103 based 14 W LED driver demo board for mains dimmable aplications Rev. 1 — 5 March 2012 User manual Document information Info Content Keywords SSL2103, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This user manual describes a demonstration demo board for evaluating	Original	UM10507 SSL2103 SSL2103, SSL2103. LED Driver aplications Dimming LED aplications HER107 US1M smd m7 BZV55C12	PDF
transistor 2N2222 SMD Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980 Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980	PDF
qualified Abstract: MGD624 Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.	Original	PMBT3906YS OT363 SC-88) PMBT3906YS OT363 SC-88 PMBT3904YS PMBT3946YPN AEC-Q101 qualified MGD624	PDF
PMBT3906YS Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.	Original	PMBT3906YS OT363 SC-88) PMBT3906YS SC-88 PMBT3904YS PMBT3946YPN AEC-Q101 TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC	PDF
Untitled Abstract: No abstract text available Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.	Original	BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P	PDF
BLF6G22LS-100 Abstract: RF35 TRANSISTOR SMD BV Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV	PDF
C5750X7R1H106M Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table	PDF
BLF6G10LS-160RN Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13	PDF
transistor SMD g 28 Abstract: No abstract text available Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.	Original	BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28	PDF

NXP TRANSISTOR SMD 13 Search Results

NXP TRANSISTOR SMD 13 Result Highlights (5)

NXP TRANSISTOR SMD 13 Datasheets Context Search

transistor K 1352

transistor d 1302

amplifier TRANSISTOR 12 GHZ

C4532X7R1E475M

BLF6G20-110

BLF6G10LS-135RN

2360d

Untitled

transistor j449

Untitled

BLF6G10LS-135R

Untitled

PBSS5620PA

TG-600PH-WH

capacitor 2200 uF

LED Driver aplications

transistor 2N2222 SMD

qualified

PMBT3906YS

Untitled

BLF6G22LS-100

C5750X7R1H106M

BLF6G10LS-160RN

transistor SMD g 28