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    O2 MARKING Search Results

    O2 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    O2 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3D7105

    Abstract: tapped SOIC-16
    Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES • • • • • • • • • • • • PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O4 3 6 O3 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible


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    3D7105 3D7105) 3D7105Z 3D7105M 3D7105H 3D7105 3D7105G tapped SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES • • • • • • • • • • • • PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O4 3 6 O3 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible


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    3D7105 3D7105) 3D7105Z 3D7105M 3D7105H 3D7105 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES • • • • • • • • • • • • PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O4 3 6 O3 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible


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    3D7105 3D7105) 3D7105Z 3D7105M 3D7105H 3D7105 3D7105G 3D7105K PDF

    3D7105

    Abstract: SOIC-16
    Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES x x x x x x x x x x x x PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O3 O4 3 6 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible O3 O4 3 6


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    3D7105 3D7105) 3D7105Z 3D7105M 3D7105H 3D7105 3D7105G SOIC-16 PDF

    CM508

    Abstract: cmos single chip camera driver kic 125 M38277M8 marking code P60 mitsubishi machine instruction 740 family Mitsubishi part numbering three and half digit 7 SEGMENT LCD DISPLAY DSA003633
    Text: MITSUBISHI MICROCOMPUTERS 3827 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER ●Serial I/O1 . 8-bit ✕ 1 UART or Clock-synchronized ●Serial I/O2 .8-bit ✕ 1 (Clock-synchronized) ●PWM output . 8-bit ✕ 1


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    10-bit CM508 cmos single chip camera driver kic 125 M38277M8 marking code P60 mitsubishi machine instruction 740 family Mitsubishi part numbering three and half digit 7 SEGMENT LCD DISPLAY DSA003633 PDF

    Untitled

    Abstract: No abstract text available
    Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONCAVE TERMINATIONS CN STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Solder plating Epoxy overcoating IDENTIFICATION COATING COLOR TYPE CN MARKING Black White, 3 digits TYPE DESIGNATION HOW TO ORDER


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    SMD MARKING CODE

    Abstract: SMD MARKING CODE 39 ALL SMD CODe smd marking IL Resonators SMD marking marking code 39 SMD MARKING CODE saw smd marking 31 ROC434D52-OG SMD rob
    Text: SAW Resonators RO Series ¡iSMD 5x5¡j System Center Freq. MHz IL(Typ.) (dB) Tolerance (KHz) Part Number Package Marking Code Remote 303.825 1.50 ¡Ó75 ROC303D82-O1 SMD 5x5 RO1 Remote 303.875 1.50 ¡Ó75 ROC303D87-O2 SMD 5x5 RO2 Remote 315.00 1.50 ¡Ó75


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    ROC303D82-O1 ROC303D87-O2 ROC315D00-O6 ROC390D00-O7 ROC418D00-OA ROC426D55-OB ROC433D42-OE ROC433D92-OF 3D42-PE ROT433D92-PF SMD MARKING CODE SMD MARKING CODE 39 ALL SMD CODe smd marking IL Resonators SMD marking marking code 39 SMD MARKING CODE saw smd marking 31 ROC434D52-OG SMD rob PDF

    CN1E2

    Abstract: No abstract text available
    Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONVEX TERMINATIONS CN-K • CN-A STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Sn - Pb Sn : Pb = 90:10 Glass overcoating IDENTIFICATION TYPE BODY COLOR MARKING CN1E CN1J, CN2A, CN2B


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    D-25578 CN1E2 PDF

    CN1J

    Abstract: No abstract text available
    Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONCAVE TERMINATIONS CN STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Sn - Pb 90:10 Epoxy overcoating IDENTIFICATION COATING COLOR TYPE CN MARKING Black White, 3 digits TYPE DESIGNATION (HOW TO ORDER)


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    D-25578 CN1J PDF

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    Abstract: No abstract text available
    Text: NETWORKS TECHNOLOGY OF TOMORROW BUSSED R-NETWORKS SINGLE COMMON CNB STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Solder plating Glass layer CNB2B5Z IDENTIFICATION #1 TYPE COATING COLOR MARKING CNB Black White, 3 digits „•” marks pin #1


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    AC125G

    Abstract: No abstract text available
    Text: SLV74AC125 Quad Buffer with 3-State Outputs Features • Outputs Source/Sink • AEC−Q100 Qualified and PPAP Capable Grade 3 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MARKING DIAGRAMS 14 1 VCC A2 B2 O2 A3 B3 O3 14 13 12 11


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    SLV74AC125 AC125G SLV74AC125DR2G SLV74AC125/D AC125G PDF

    Untitled

    Abstract: No abstract text available
    Text: NETWORKS TECHNOLOGY OF TOMORROW BUSSED R-NETWORKS SINGLE COMMON CNB STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Sn - Pb Sn:Pb=90:10 Glass layer CNB2B5Z IDENTIFICATION #1 TYPE COATING COLOR MARKING CNB Black White, 3 digits + mark für pin #1


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    D-25578 PDF

    CN1J4

    Abstract: x0402 CN1j
    Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONVEX TERMINATIONS CN-K • CN-A STRUCTURE 1 2 3 4 5 6 Ceramic substrate 96% Al2O3 Ag / Pd Ru O2 Glass Ni / Solder plating Glass overcoating (CN1F8 = epoxy overcoating) IDENTIFICATION TYPE BODY COLOR


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    CN1E2

    Abstract: CN1E4 CN1J4 CN1j
    Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONVEX TERMINATIONS CN-K • CN-A STRUCTURE 1 2 3 4 5 6 Ceramic substrate 96% Al2O3 Ag / Pd Ru O2 Glass Ni / Solder plating Glass overcoating (CN1F8 = epoxy overcoating) IDENTIFICATION TYPE BODY COLOR


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    dsilc6-4xx

    Abstract: kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8
    Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories


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    OT-666 dsilc6-4xx kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: EEPROM AS8ER128K32 Austin Semiconductor, Inc. 128K x 32 EEPROM PIN ASSIGNMENT Radiation Tolerant EEPROM Memory Array Top View RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 68 Lead CQFP AVAILABLE AS MILITARY SPECIFICATIONS • I/O0 I/O1 I/O2


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    MIL-STD-883 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 AS8ER128K32 I/O16 I/O17 PDF

    act125g

    Abstract: AC125G MC74ACT125DG 74AC ACT125 MC74AC125 MC74AC125D MC74AC125N MC74AC125NG MC74ACT125
    Text: MC74AC125, MC74ACT125 Quad Buffer with 3−State Outputs Features • Outputs Source/Sink • ′ACT125 Has TTL Compatible Inputs • Pb−Free Packages are Available* http://onsemi.com VCC A2 B2 O2 A3 B3 O3 14 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14


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    MC74AC125, MC74ACT125 ACT125 PDIP-14 SOIC-14 14-Lead TSSOP-14 SOEIAJ-14 MC74AC125/D act125g AC125G MC74ACT125DG 74AC MC74AC125 MC74AC125D MC74AC125N MC74AC125NG MC74ACT125 PDF

    Untitled

    Abstract: No abstract text available
    Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories


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    OT-666 PDF

    Untitled

    Abstract: No abstract text available
    Text: EEPROM AS8ER128K32 Austin Semiconductor, Inc. 128K x 32 EEPROM PIN ASSIGNMENT Radiation Tolerant EEPROM Memory Array Top View RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 68 Lead CQFP AVAILABLE AS MILITARY SPECIFICATIONS • I/O0 I/O1 I/O2


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    AS8ER128K32 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 MIL-STD-883 150ns Automatic000 PDF

    AC125G

    Abstract: act125g 74AC ACT125 MC74AC125 MC74AC125D MC74AC125N MC74AC125NG MC74ACT125 MC74ACT125DTR2G
    Text: MC74AC125, MC74ACT125 Quad Buffer with 3−State Outputs Features • Outputs Source/Sink • ′ACT125 Has TTL Compatible Inputs • Pb−Free Packages are Available http://onsemi.com VCC A2 B2 O2 A3 B3 O3 14 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14


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    MC74AC125, MC74ACT125 ACT125 PDIP-14 SOIC-14 14-Lead TSSOP-14 SOEIAJ-14 MC74AC125/D AC125G act125g 74AC MC74AC125 MC74AC125D MC74AC125N MC74AC125NG MC74ACT125 MC74ACT125DTR2G PDF

    act125g

    Abstract: AC125G
    Text: MC74AC125, MC74ACT125 Quad Buffer with 3-State Outputs Features • Outputs Source/Sink • ′ACT125 Has TTL Compatible Inputs • Pb−Free Packages are Available http://onsemi.com VCC A2 B2 O2 A3 B3 O3 14 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14 1


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    MC74AC125, MC74ACT125 ACT125 PDIP-14 SOIC-14 14-Lead TSSOP-14 SOEIAJ-14 MC74AC125/D act125g AC125G PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1


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    E3SL05 Q62702-B499 OD-123 EHA0700I PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage


    OCR Scan
    BAW56LT1/D BAW56LT1 -236A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS394 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS394 Unit in mm + 2.5 - 0.5 0.3 + 0.25 1.5 - 0 .15 , Small Package Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5mA —Q o o + i Ü - -o2 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    1SS394 PDF