3D7105
Abstract: tapped SOIC-16
Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES • • • • • • • • • • • • PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O4 3 6 O3 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible
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3D7105
3D7105)
3D7105Z
3D7105M
3D7105H
3D7105
3D7105G
tapped
SOIC-16
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Untitled
Abstract: No abstract text available
Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES • • • • • • • • • • • • PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O4 3 6 O3 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible
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3D7105
3D7105)
3D7105Z
3D7105M
3D7105H
3D7105
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Untitled
Abstract: No abstract text available
Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES • • • • • • • • • • • • PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O4 3 6 O3 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible
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3D7105
3D7105)
3D7105Z
3D7105M
3D7105H
3D7105
3D7105G
3D7105K
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3D7105
Abstract: SOIC-16
Text: 3D7105 MONOLITHIC 5-TAP FIXED DELAY LINE SERIES 3D7105 FEATURES x x x x x x x x x x x x PACKAGES IN 1 8 VDD All-silicon, low-power CMOS VDD IN 1 8 VDD IN 1 14 O2 2 7 O1 technology O3 O4 3 6 O1 O2 2 7 N/C N/C 2 13 GND 4 5 O5 TTL/CMOS compatible O3 O4 3 6
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3D7105
3D7105)
3D7105Z
3D7105M
3D7105H
3D7105
3D7105G
SOIC-16
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CM508
Abstract: cmos single chip camera driver kic 125 M38277M8 marking code P60 mitsubishi machine instruction 740 family Mitsubishi part numbering three and half digit 7 SEGMENT LCD DISPLAY DSA003633
Text: MITSUBISHI MICROCOMPUTERS 3827 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER ●Serial I/O1 . 8-bit ✕ 1 UART or Clock-synchronized ●Serial I/O2 .8-bit ✕ 1 (Clock-synchronized) ●PWM output . 8-bit ✕ 1
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10-bit
CM508
cmos single chip camera driver
kic 125
M38277M8
marking code P60
mitsubishi machine instruction 740 family
Mitsubishi part numbering
three and half digit 7 SEGMENT LCD DISPLAY
DSA003633
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Untitled
Abstract: No abstract text available
Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONCAVE TERMINATIONS CN STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Solder plating Epoxy overcoating IDENTIFICATION COATING COLOR TYPE CN MARKING Black White, 3 digits TYPE DESIGNATION HOW TO ORDER
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SMD MARKING CODE
Abstract: SMD MARKING CODE 39 ALL SMD CODe smd marking IL Resonators SMD marking marking code 39 SMD MARKING CODE saw smd marking 31 ROC434D52-OG SMD rob
Text: SAW Resonators RO Series ¡iSMD 5x5¡j System Center Freq. MHz IL(Typ.) (dB) Tolerance (KHz) Part Number Package Marking Code Remote 303.825 1.50 ¡Ó75 ROC303D82-O1 SMD 5x5 RO1 Remote 303.875 1.50 ¡Ó75 ROC303D87-O2 SMD 5x5 RO2 Remote 315.00 1.50 ¡Ó75
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ROC303D82-O1
ROC303D87-O2
ROC315D00-O6
ROC390D00-O7
ROC418D00-OA
ROC426D55-OB
ROC433D42-OE
ROC433D92-OF
3D42-PE
ROT433D92-PF
SMD MARKING CODE
SMD MARKING CODE 39
ALL SMD CODe
smd marking IL
Resonators SMD marking
marking code 39
SMD MARKING CODE saw
smd marking 31
ROC434D52-OG
SMD rob
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CN1E2
Abstract: No abstract text available
Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONVEX TERMINATIONS CN-K • CN-A STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Sn - Pb Sn : Pb = 90:10 Glass overcoating IDENTIFICATION TYPE BODY COLOR MARKING CN1E CN1J, CN2A, CN2B
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D-25578
CN1E2
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CN1J
Abstract: No abstract text available
Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONCAVE TERMINATIONS CN STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Sn - Pb 90:10 Epoxy overcoating IDENTIFICATION COATING COLOR TYPE CN MARKING Black White, 3 digits TYPE DESIGNATION (HOW TO ORDER)
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D-25578
CN1J
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Untitled
Abstract: No abstract text available
Text: NETWORKS TECHNOLOGY OF TOMORROW BUSSED R-NETWORKS SINGLE COMMON CNB STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Solder plating Glass layer CNB2B5Z IDENTIFICATION #1 TYPE COATING COLOR MARKING CNB Black White, 3 digits „•” marks pin #1
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AC125G
Abstract: No abstract text available
Text: SLV74AC125 Quad Buffer with 3-State Outputs Features • Outputs Source/Sink • AEC−Q100 Qualified and PPAP Capable Grade 3 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MARKING DIAGRAMS 14 1 VCC A2 B2 O2 A3 B3 O3 14 13 12 11
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SLV74AC125
AC125G
SLV74AC125DR2G
SLV74AC125/D
AC125G
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Untitled
Abstract: No abstract text available
Text: NETWORKS TECHNOLOGY OF TOMORROW BUSSED R-NETWORKS SINGLE COMMON CNB STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Ru O2 Glass Ni / Sn - Pb Sn:Pb=90:10 Glass layer CNB2B5Z IDENTIFICATION #1 TYPE COATING COLOR MARKING CNB Black White, 3 digits + mark für pin #1
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D-25578
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CN1J4
Abstract: x0402 CN1j
Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONVEX TERMINATIONS CN-K • CN-A STRUCTURE 1 2 3 4 5 6 Ceramic substrate 96% Al2O3 Ag / Pd Ru O2 Glass Ni / Solder plating Glass overcoating (CN1F8 = epoxy overcoating) IDENTIFICATION TYPE BODY COLOR
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CN1E2
Abstract: CN1E4 CN1J4 CN1j
Text: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORK CONVEX TERMINATIONS CN-K • CN-A STRUCTURE 1 2 3 4 5 6 Ceramic substrate 96% Al2O3 Ag / Pd Ru O2 Glass Ni / Solder plating Glass overcoating (CN1F8 = epoxy overcoating) IDENTIFICATION TYPE BODY COLOR
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dsilc6-4xx
Abstract: kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
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OT-666
dsilc6-4xx
kv 21 fs 140
4F2 diode
SMIA cell phone camera
SMP75-8
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Untitled
Abstract: No abstract text available
Text: EEPROM AS8ER128K32 Austin Semiconductor, Inc. 128K x 32 EEPROM PIN ASSIGNMENT Radiation Tolerant EEPROM Memory Array Top View RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 68 Lead CQFP AVAILABLE AS MILITARY SPECIFICATIONS • I/O0 I/O1 I/O2
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MIL-STD-883
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
AS8ER128K32
I/O16
I/O17
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act125g
Abstract: AC125G MC74ACT125DG 74AC ACT125 MC74AC125 MC74AC125D MC74AC125N MC74AC125NG MC74ACT125
Text: MC74AC125, MC74ACT125 Quad Buffer with 3−State Outputs Features • Outputs Source/Sink • ′ACT125 Has TTL Compatible Inputs • Pb−Free Packages are Available* http://onsemi.com VCC A2 B2 O2 A3 B3 O3 14 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14
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MC74AC125,
MC74ACT125
ACT125
PDIP-14
SOIC-14
14-Lead
TSSOP-14
SOEIAJ-14
MC74AC125/D
act125g
AC125G
MC74ACT125DG
74AC
MC74AC125
MC74AC125D
MC74AC125N
MC74AC125NG
MC74ACT125
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Untitled
Abstract: No abstract text available
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
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OT-666
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Untitled
Abstract: No abstract text available
Text: EEPROM AS8ER128K32 Austin Semiconductor, Inc. 128K x 32 EEPROM PIN ASSIGNMENT Radiation Tolerant EEPROM Memory Array Top View RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 68 Lead CQFP AVAILABLE AS MILITARY SPECIFICATIONS • I/O0 I/O1 I/O2
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AS8ER128K32
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
MIL-STD-883
150ns
Automatic000
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AC125G
Abstract: act125g 74AC ACT125 MC74AC125 MC74AC125D MC74AC125N MC74AC125NG MC74ACT125 MC74ACT125DTR2G
Text: MC74AC125, MC74ACT125 Quad Buffer with 3−State Outputs Features • Outputs Source/Sink • ′ACT125 Has TTL Compatible Inputs • Pb−Free Packages are Available http://onsemi.com VCC A2 B2 O2 A3 B3 O3 14 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14
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MC74AC125,
MC74ACT125
ACT125
PDIP-14
SOIC-14
14-Lead
TSSOP-14
SOEIAJ-14
MC74AC125/D
AC125G
act125g
74AC
MC74AC125
MC74AC125D
MC74AC125N
MC74AC125NG
MC74ACT125
MC74ACT125DTR2G
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act125g
Abstract: AC125G
Text: MC74AC125, MC74ACT125 Quad Buffer with 3-State Outputs Features • Outputs Source/Sink • ′ACT125 Has TTL Compatible Inputs • Pb−Free Packages are Available http://onsemi.com VCC A2 B2 O2 A3 B3 O3 14 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14 1
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MC74AC125,
MC74ACT125
ACT125
PDIP-14
SOIC-14
14-Lead
TSSOP-14
SOEIAJ-14
MC74AC125/D
act125g
AC125G
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Untitled
Abstract: No abstract text available
Text: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1
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E3SL05
Q62702-B499
OD-123
EHA0700I
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage
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BAW56LT1/D
BAW56LT1
-236A
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Untitled
Abstract: No abstract text available
Text: 1SS394 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS394 Unit in mm + 2.5 - 0.5 0.3 + 0.25 1.5 - 0 .15 , Small Package Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5mA —Q o o + i Ü - -o2 MAXIMUM RATINGS (Ta = 25°C)
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1SS394
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