IS41LV16257B
Abstract: 41LV16257B PK13197T40
Text: IS41LV16257B JUNE 2007 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as
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IS41LV16257B
IS41LV16257B
16-bit
32-bit
41LV16257B
PK13197T40
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MSM5416258A
Abstract: msm5416258
Text: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate
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E2L0047-28-Z2
MSM5416258A
144-Word
16-Bit
MSM5416258A
msm5416258
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8Kx8 28F64
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability
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UT28F64
100mA
MIL-STD-883,
0E-11
28F64)
8Kx8 28F64
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IS41LV16105A
Abstract: No abstract text available
Text: ISSI IS41LV16105A 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page
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IS41LV16105A
16-MBIT)
IS41LV16105A
16-bit
32-bit
cycles/16
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IS41C16105
Abstract: IS41LV16105 IS41C16105-50TL N-40A
Text: IS41C16105 IS41LV16105 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE DECEMBER 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single
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IS41C16105
IS41LV16105
16-MBIT)
IS41C16105
IS41LV16105
16-bit
32-bit
cycles/16
IS41C16105-50TL
N-40A
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TC5117445CSJ
Abstract: No abstract text available
Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The
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TC5117445CSJ-40
304-WORD
TC5117445CSJ
28-pin
17445CSJ-40
TC5117445CSJ
SOJ28
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cd018
Abstract: No abstract text available
Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C
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JS633
TMS28F033
4194304-BIT
80-PIN
16/32-bit
cd018
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TC528257
Abstract: n724
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The
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TC528257
144WORDS
TC528257
144-w
512-words
TC528257J/SZ/nVTR1017240
TC528257J/SZ/FT/TR-70
TC528257J/SZ/FT/TR-80
n724
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TC5118160CJ
Abstract: tc5118160 TC5118160c
Text: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced
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TC5118160CJ/CFT-50
576-WORD
16-BIT
TC5118160CJ/CFT
42-pin
50-pin
TC5118160CJ
tc5118160
TC5118160c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608
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TC5164
805AJ/AFT/AJS/AFTS-40
805AJ/AFT/AJS/AFTS
32-pin
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v801
Abstract: tc5165165
Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4
72-BIT
THM72V8015ATG
608-word
TC5165805AFT
v801
tc5165165
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tc528126
Abstract: TC528126B
Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The
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TC52812GBJ/BZ
072-words
256-words
TC528126BJ/BZ
TC52812GB
tc528126
TC528126B
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Untitled
Abstract: No abstract text available
Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72-BIT
THM73V8015ATG-4
THM73V8015ATG
608-word
TC5165805AFT
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tc516
Abstract: No abstract text available
Text: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V1615ATG-4
216-WORD
72-BIT
THM73V1615ATG
TC5165405AFT
tc516
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Untitled
Abstract: No abstract text available
Text: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.
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IS41C16256
16-bit
IS41C16256
32-bit
IS41C16256-35KI
IS41C
16256-35TI
400-mil
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Untitled
Abstract: No abstract text available
Text: ISSI IS41C16257 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE JULY 1998 FEATURES DESCRIPTION • Fast access and cycle time The IS41C 16257 is a 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a
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IS41C16257
IS41C
16-bit
IS41C16257
32-bit
IS41C16257-60K
IS41C16257-60T
400-mil
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Untitled
Abstract: No abstract text available
Text: ISSI' IS 4 1 L V 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Extended Data-Out (EDO) Page Mode access cycle LVTTL compatible inputs and outputs Single +3.3V ± 10% power supply 5V I/O tolerant
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40-pin
16-bit
IS41LV16256
within27
PK13197T2
0044Q4
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Untitled
Abstract: No abstract text available
Text: ISSI IS 4 1 C 1 6 1 0 0 IS 4 1 L V 1 6 1 0 0 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY AUGUST 1999 DESCRIPTION FEATURES The IS S I IS41C16100 and IS41LV16100/are 1,048,576 x 16bit high-performance CMOS Dynamic Random Access Memo ries. These devices offer an accelerated cycle access called
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16-MBIT)
IS41C16100
IS41LV16100/are
16bit
16-bit
32-bit
IS41C16100-50KI
IS41C16100-50TI
IS41C16100-60KI
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Untitled
Abstract: No abstract text available
Text: IS 4 1 C 1 6 1 0 0 /S IS 4 1 L V 1 6 1 0 0 /S 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE ISSI PRELIMINARY OCTOBER 1998 DESCRIPTION FEATURES The ISSI IS41C16100/S and IS41LV16100/S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access
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16-MBIT)
IS41C16100/S
IS41LV16100/S
16-bit
32-bit
cycles/16
IS41C16100S-50K
IS41C16100S-50T
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72V1615ATG-4
216-WORD
72-BIT
THM72V1615ATG
TC5165405AFT
40-ns
50-ns
TC5165xx5AJ/AFT/AJS/AFTS
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Am2140s
Abstract: VC1039
Text: Am2130/Am2140 1024x8 Dual-Port Static Random-Access Memories DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using one master (Am2130) and required number of slave
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Am2130/Am2140
1024x8
Am2130)
Am2140)
48-pin
52-pin
Am2130
Am2140
Am2140s
VC1039
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V8015ATG-4f-5
608-WORD
72-BIT
THM73V8015ATG
TC5165805AFT
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MIL-STD-883 Method 1019
Abstract: No abstract text available
Text: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet i i UNITED p i g a t e c h n o lo g ie s I T l m ic r o e le c t r o n ic s c e n te r mmm FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory
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UT28F64
140mA
MIL-STD-883,
MIL-I-38535
MIL-STD-883 Method 1019
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V8015ATG-4f-5
608-WORD
64-BIT
THM65V8015ATG
TC5165805AFT
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