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    OF BFW 13 Search Results

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    OF BFW 13 Price and Stock

    Coiltronics BFW-3

    Fuse Wire - 98.5% Pb/1.5% Sb - 3A - 0.79mm (0.031in) Dia - 136ft (0.5lb) Spool
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BFW-3 7
    • 1 $205.89
    • 10 $196.76
    • 100 $193.15
    • 1000 $193.15
    • 10000 $193.15
    		Buy Now

    Coiltronics BFW-1/2

    Fuse Wire - 98.5% Pb/1.5% Sb - 0.5A - 0.250mm (.010in) Dia - 1308ft (0.5lb) Spool
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BFW-1/2
    • 1 $413.3
    • 10 $353.99
    • 100 $338.85
    • 1000 $338.85
    • 10000 $338.85
    		Buy Now

    Struthers-Dunn SK-TRF12-BFW-1

    Conn Relay Socket SKT 12 POS Solder ST Panel Mount
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SK-TRF12-BFW-1
    • 1 -
    • 10 $15.84
    • 100 $12.2
    • 1000 $10.82
    • 10000 $10.82
    		Buy Now

    OF BFW 13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFW17A

    Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
    Text: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and


    Original     		PDF BFW16A BFW17A BFW17A BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11

    of BFW 13

    Abstract: BFS3565 Samwha code BFS3580A0
    Text: Features Simple to handle and inexpensive in price Available in various configurations to conform to the wiring materials in use and the characteristics as required. Absorbs noise effectively because of the impedance over 30 in high frequency band From 10 to 1000MHz .


    Original     		PDF 1000MHz of BFW 13 BFS3565 Samwha code BFS3580A0

    Untitled

    Abstract: No abstract text available
    Text: EMI BEAD FILTERS PATENTED FEATURES ・Simple to handle and inexpensive in price. ・Available in various configurationgs to conform to the wiring materials usd the characteristics as required. ・Absorbs noise effectively because of the impedance over 30Ω in high frequency band


    Original     		PDF DC100V)

    din 3141

    Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
    Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings


    Original     		PDF BFW92A D-74025 din 3141 transistor bfw 88 bfw 92 bfw 96

    BFS3565

    Abstract: samwha date code samwha wl
    Text: EMI BEAD FILTERS PATENTED FEATURES °§ Simple to handle and inexpensive in price. °§ Available in various configurations to conform to the wiring materials in use the characteristics as required. °§ Absorbs noise effectively because of the impedance over 30•ÿ


    Original     		PDF 1000MHz) A221M° BFS3565 samwha date code samwha wl

    BFS3565

    Abstract: BFS3510A0 BF S 3550 R 2 F Bfr 910 DC100V1 BFS2550
    Text: EMI BEAD FILTERS PATENTED FEATURES Simple to handle and inexpensive in price. Available in various configurations to conform to the wiring materials in use the characteristics as required. Absorbs noise effectively because of the impedance over 30Ω in high frequency band(from 10 to 1000MHz).


    Original     		PDF 1000MHz) BFS3565 BFS3510A0 BF S 3550 R 2 F Bfr 910 DC100V1 BFS2550

    samwha capacitor HOW TO ORDER

    Abstract: samwha ferrite core R2B marking code FERRITE BEAD 100M BFR601009C8NF BFR601009C copper bond wire samwha capacitor spec R2F marking R2B FERRITE
    Text: BEAD Filter Schematic and Characteristics BEAD Filter Item Specification Rated Voltage 50VDC Rated current Between terminals ① and ③ EMI Suppression Filter Withstanding test voltage between terminals ① and ② or ② and ③ 1A 125V DC Features Available in various configurations to conform to the wiring materials in use the characteristics as required.


    Original     		PDF ECP-200 samwha capacitor HOW TO ORDER samwha ferrite core R2B marking code FERRITE BEAD 100M BFR601009C8NF BFR601009C copper bond wire samwha capacitor spec R2F marking R2B FERRITE

    7555 ID

    Abstract: samwha ferrite core samwha capacitor R2B marking code samwha capacitor HOW TO ORDER BFS3565 samwha ferrite BFS3510A0 BFS3580A0 diode T 3512
    Text: BEAD Filter Schematic and Characteristics BEAD Filter Item Specification Rated Voltage 50VDC Rated current Between terminals ① and ③ EMI Suppression Filter Withstanding test voltage between terminals ① and ② or ② and ③ 1A 125V DC Features Available in various configurations to conform to the wiring materials in use the characteristics as required.


    Original     		PDF 50VDC ECP-200 7555 ID samwha ferrite core samwha capacitor R2B marking code samwha capacitor HOW TO ORDER BFS3565 samwha ferrite BFS3510A0 BFS3580A0 diode T 3512

    bfw 10 transistor

    Abstract: HBFW BBFW BBRW dale leaded resistor code transistor BFW 10
    Text: B, H Vishay Dale Carbon Film Resistors, General Purpose, High Voltage FEATURES • Single units to 10 W, 40 KV, ± 5% and matched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002" [.051mm] thick


    Original     		PDF 051mm] 406mm] 01-Aug-02 bfw 10 transistor HBFW BBFW BBRW dale leaded resistor code transistor BFW 10

    BFW16A

    Abstract: bfw16 transistor bfw16a BFW 16
    Text: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V


    OCR Scan     		PDF UTILI18 BFW16A BFW16A bfw16 transistor bfw16a BFW 16

    BFW16

    Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
    Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of


    OCR Scan     		PDF BFW16 Q62702-F319 TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor

    GL+7837

    Abstract: No abstract text available
    Text: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation


    OCR Scan     		PDF BFW16A BFW17A T-31-23 GL+7837

    BFW16A

    Abstract: 16ab BFW17A
    Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily


    OCR Scan     		PDF BFW16A BFW17A 16Aand 17Aare 16ab BFW17A

    bfw 106 c

    Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
    Text: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for


    OCR Scan     		PDF fi235bQ5 Q0047ES Q62702-F319 23SbOS 00Q4727 BFW16 bfw 106 c Q62702-F319 transistor BFW 10 bfw16a

    TRANSISTOR b 772 p

    Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
    Text: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for


    OCR Scan     		PDF fi235bQS Q62702-F319 C--12 23SbQS Q0QM727 BFW16A TRANSISTOR b 772 p bfw 16 transistor BFW 72 TRANSISTOR BFW 16

    SV1AC material

    Abstract: imi 6050 SN05N BFS3565 T314 P4V1 SN20 SN-20
    Text: IMI Seal file rs FatefMerf Features • Simple to handle and inexpensive in price. • Available in various configurations to conform to the wiring materials in use and the characteristics as required. • Absorbs noise effectively because of the impedance over 30 Q in high frequency band


    OCR Scan     		PDF 1000MHz) SV1AC material imi 6050 SN05N BFS3565 T314 P4V1 SN20 SN-20

    transistor BD 540

    Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
    Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches


    OCR Scan     		PDF 609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


    OCR Scan     		PDF BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63

    BFT92A

    Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
    Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E


    OCR Scan     		PDF BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92

    TRANSISTOR BFW 11

    Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
    Text: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C


    OCR Scan     		PDF BLW13 O-117 T0-60CE S0-104 SO-104 TRANSISTOR BFW 11 BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor

    BFW16

    Abstract: BFW17 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A
    Text: Ç7 SC S -T H O M S O N KUiSTEMllKSS BFW 16A BFW17A S G S-THOMSON C A T V -M A T V A M P L IF IE R S DESCRIPTIO N The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation


    OCR Scan     		PDF BFW16A BFW17 BFW16A-BFW17A BFW16 -BFW17A T-31-23 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A

    BFR601009C8NF

    Abstract: AOS PACKING BFR601009C8NE
    Text: BEAD Filter BEAD Filter Features • Available in various configurations to conform to the wiring materials in use the characteristics as required. • A b s o rb s noise effectively b ecause of the im pedance ove r 30Q in high frequency band. • Automatic insertion type of taping is available.


    OCR Scan     		PDF ECP-200 BFR601009C8NF AOS PACKING BFR601009C8NE

    BFW 100 transistor

    Abstract: bfw92
    Text: BFW92 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to G H z range. Features • High pow er gain • Low noise figure


    OCR Scan     		PDF BFW92 D-74025 20-Jan-99 BFW 100 transistor bfw92

    SO 313

    Abstract: No abstract text available
    Text: VISHAY Vishay Dale Carbon Film Resistors, General Purpose, High Voltage T FEATURES • Single units to 10 W, 4 0 KV, ± 5% and m atched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002"


    OCR Scan     		PDF 0KV95] 406mm] 24-Oct-OO SO 313