Bjt 547
Abstract: OF BJT 547 2N585
Text: 2N585 Ge NPN Lo-Pwr BJT 4.70 Transistors Transistors Bipolar Ge NP. 1 of 2 Home Part Number: 2N585 Online Store 2N585 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N585
com/2n585
2N585
Bjt 547
OF BJT 547
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Bjt 547
Abstract: OF BJT 547 Curtice DATASHEET OF BJT 547 advanced design system
Text: IC-CAP User Training Course Overview Course Numbers: Agilent Training Center: N3231A Onsite Training Center: N3231B Learn through a combination of lecture and hands-on exercises Course Overview What you will learn Specifications Through interactive lectures and
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N3231A
N3231B
5988-2995EN
Bjt 547
OF BJT 547
Curtice
DATASHEET OF BJT 547
advanced design system
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lm 1723 cp equivalent
Abstract: K 1723 isolated 4 to 20ma self-powered analog transmitter circuit USES OF BJT 547 2N3904 npn bjt transistor Bjt 547 BJT isolated Base Drive circuit BJT 2n3904 bjt 500v 74LVC125
Text: DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops 1.0 General Description 2.0 Applications The DAC161P997 is a 16- bit ∑Δ digital-to-analog converter DAC for transmitting an analog output current over an industry standard 4-20 mA current loop. It offers 16-bit accuracy
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DAC161P997
16-bit
4-20mA
DAC161P997
29ppm/
lm 1723 cp equivalent
K 1723
isolated 4 to 20ma self-powered analog transmitter circuit
USES OF BJT 547
2N3904 npn bjt transistor
Bjt 547
BJT isolated Base Drive circuit
BJT 2n3904
bjt 500v
74LVC125
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USES OF BJT 547
Abstract: K 1723 2N3904 npn bjt transistor isolated 4 to 20ma self-powered analog transmitter circuit lm 1723 cp equivalent bjt 500v lm 35 sensor interface WITH ADC
Text: DAC161P997 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Literature Number: SNAS515C DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops 1.0 General Description 2.0 Applications The DAC161P997 is a 16- bit ∑Δ digital-to-analog converter DAC for transmitting an analog output current over an industry standard 4-20 mA current loop. It offers 16-bit accuracy
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DAC161P997
DAC161P997
16-bit
4-20mA
SNAS515C
USES OF BJT 547
K 1723
2N3904 npn bjt transistor
isolated 4 to 20ma self-powered analog transmitter circuit
lm 1723 cp equivalent
bjt 500v
lm 35 sensor interface WITH ADC
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LM2936-3
Abstract: No abstract text available
Text: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog
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DAC161P997
SNAS515D
DAC161P997
16-bit
4-20mA
WQFN-16
LM2936-3
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80K-40
Abstract: No abstract text available
Text: DAC161P997 www.ti.com SNAS515C – JULY 2011 – REVISED AUGUST 2011 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES 1 • • • • • 2 16-bit linearity Single-Wire Interface SWIF , with handshake Digital Data transmission (no loss of fidelity)
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DAC161P997
SNAS515C
DAC161P997
16-bit
4-20mA
LLP-16
16-bi
80K-40
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Untitled
Abstract: No abstract text available
Text: DAC161P997 www.ti.com SNAS515F – JULY 2011 – REVISED JANUARY 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog
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DAC161P997
SNAS515F
DAC161P997
16-bit
4-20mA
29ppm/Â
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Untitled
Abstract: No abstract text available
Text: DAC161P997 www.ti.com SNAS515E – JULY 2011 – REVISED OCTOBER 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog
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DAC161P997
SNAS515E
DAC161P997
16-bit
4-20mA
29ppm/Â
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Untitled
Abstract: No abstract text available
Text: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog
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DAC161P997
SNAS515D
DAC161P997
16-bit
4-20mA
29ppm/Â
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Untitled
Abstract: No abstract text available
Text: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES 1 • • • • • • • • • • 2 16-bit Linearity Single-Wire Interface SWIF , with Handshake
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DAC161P997
SNAS515D
DAC161P997
16-bit
4-20mA
WQFN-16
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2SC3583
Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION
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NE681
NE681
24-Hour
2SC3583
kf 203 transistor
BJT BF 167
marking 855 sot 353
2SC4227
2SC5007
2SC5012
NE68139
NE68118
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Untitled
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design DAC161P997 SNAS515G – JULY 2011 – REVISED DECEMBER 2014 DAC161P997 Single-Wire 16-bit DAC for 4- to 20-mA Loops 1 Features 3 Description • • • •
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DAC161P997
SNAS515G
DAC161P997
16-bit
20-mA
16-bit
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1820 0944
Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s
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NE681
NE681
1820 0944
NE68135
ca 4558
NE68130
BJT BF 167
bjt 522
BJT IC Vce
2SC4227
2SC5007
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kf 203 transistor
Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION
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NE681
NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
kf 203 transistor
08E-12
IC 2030 PIN CONNECTIONS
bjt 522
DATASHEET OF BJT 547
NE AND micro-X
2SC4227
2SC5007
BF 194 npn transistor
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NE68135
Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o
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NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
NE68139-T1
NE68139R-T1
transistor npn d 2078
common emitter bjt
transistor bf 494
NE68133-T1B-A
mje 3009
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transistor "micro-x" "marking" 102
Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
transistor "micro-x" "marking" 102
laser drive ic 3656
4558 L
IC 2030 PIN CONNECTIONS
LB 1639
mje 3009
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BJT characteristics
Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
BJT characteristics
NE68135
NE AND micro-X
2SC4227
2SC5007
2SC5012
NE68100
NE68118
NE68119
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BJT BF 331
Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
24-Hour
BJT BF 331
mje 1303
transistor "micro-x" "marking" 102
transistor MJE -1103
NE68019
915 transistor
355 mje 1102
2SC5013
NE68018
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Untitled
Abstract: No abstract text available
Text: RFPD2580 RFPD2580 45MHz to 1200MHz GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID Package: SOT-115J +VB Features ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability
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RFPD2580
45MHz
1200MHz
1200MHz
OT-115J
450mA
24VDC
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Untitled
Abstract: No abstract text available
Text: RFPP2590 RFPP2590 45MHz to 1200MHz GaAs Push Pull Hybrid 45MHz to 1200MHz GaAs PUSH PULL HYBRID Package: SOT-115J +VB Features ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise
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RFPP2590
45MHz
1200MHz
1200MHz
OT-115J
240mA
24VDC
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RFPD2580
Abstract: 640MHZ Rfmd hybrid module GaN BJT
Text: RFPD2580 RFPD2580 45MHz to 1200MHz GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID Package: SOT-115J +VB Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability
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RFPD2580
45MHz
1200MHz
1200MHz
OT-115J
450mA
24VDC
RFPD2580
640MHZ
Rfmd hybrid module
GaN BJT
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Untitled
Abstract: No abstract text available
Text: D10040230P1 D10040230P 1 451000 MHz GaAs Power Doubler Hybrid 45-1000MHz GaAs POWER DOUBLER HYBRID NOT FOR NEW DESIGNS Package: SOT-115J Product Description Features The D10040230P1 is a Hybrid Power Doubler amplifier module. The part employs GaAs die, has high output capability, and is operated from
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D10040230P
D10040230P1
45-1000MHz
OT-115J
D10040230P1
45MHz
1000MHz.
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LB 1639
Abstract: transistor TT 3043
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP
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OCR Scan
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NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
LB 1639
transistor TT 3043
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Transistors BF 494
Abstract: Transistor BJT 547 b transistor kf 469
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)
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OCR Scan
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NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
Transistors BF 494
Transistor BJT 547 b
transistor kf 469
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