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    OF IGBT Search Results

    OF IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    OF IGBT Price and Stock

    Microchip Technology Inc APT40GF120JRD

    IGBT, Fast IGBT Module Transistor
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    Onlinecomponents.com APT40GF120JRD
    • 1 -
    • 10 $41.35
    • 100 $37.83
    • 1000 $37.83
    • 10000 $37.83
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    Microchip Technology Inc APT50GF120JRD

    Fast IGBT Module Transistor
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    Onlinecomponents.com APT50GF120JRD
    • 1 $46.62
    • 10 $41.71
    • 100 $38.55
    • 1000 $37.97
    • 10000 $37.97
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    Microchip Technology Inc APT65GP60J

    Trans IGBT Module N-CH 600V
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    Onlinecomponents.com APT65GP60J
    • 1 $34.44
    • 10 $31.17
    • 100 $28.48
    • 1000 $28.05
    • 10000 $28.05
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    Microchip Technology Inc APT85GR120JD60

    Trans IGBT Module N-CH 1200V
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    Onlinecomponents.com APT85GR120JD60
    • 1 -
    • 10 $39.54
    • 100 $36.17
    • 1000 $36.17
    • 10000 $36.17
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    Microchip Technology Inc APT50GP60JDQ2

    Trans IGBT Module N-CH 600V 100A 329000mW
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    Onlinecomponents.com APT50GP60JDQ2
    • 1 $30.96
    • 10 $28.02
    • 100 $25.6
    • 1000 $25.21
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    OF IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    73E05

    Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
    Text: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules


    Original     		PDF 0600G650100 73E05 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05

    MOSFET 4407

    Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
    Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1


    Original     		PDF AN-990 MOSFET 4407 ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110

    IRF9460

    Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
    Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1


    Original     		PDF AN-990 IRF9460 ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F

    IGBT parallel

    Abstract: advantage and disadvantage of igbt Measurement of stray inductance for IGBT Measurement of the circuit stray inductance L eupec igbt driver AN2004-06 parallel circuits eupec module igbt IGBT3 infineon EUPEC
    Text: Application Note Date: 27.09.2004 AN-Number: AN2004-06 Page 1 Department: SM-AE Paralleling of EconoPACKTM+ 1. EconoPACKTM+ Design 2. Paralleling of IGBT3 and EmCon HE diodes 3. Methods of paralleling EconoPACKTM+ 4. Dynamic and static current sharing of parallel circuits


    Original     		PDF AN2004-06 D-59581 IGBT parallel advantage and disadvantage of igbt Measurement of stray inductance for IGBT Measurement of the circuit stray inductance L eupec igbt driver AN2004-06 parallel circuits eupec module igbt IGBT3 infineon EUPEC

    igbt 6.5kv

    Abstract: 6.5kV IGBT FZ600R65KF1 AN2002-05 1kA IGBT
    Text: APPLICATION NOTE Date: 02-07-05 Page 1 of 3 AN-Number: AN2002-05 Short Circuit Operation of 6.5kV IGBTs This application note presents aspects for driving IGBTs, which allow a safe short circuit operation of 6.5kV IGBTs. The following picture shows a short circuit turn-off of a FZ600R65KF1 with and without a clamping of


    Original     		PDF AN2002-05 FZ600R65KF1 igbt 6.5kv 6.5kV IGBT AN2002-05 1kA IGBT

    600V igbt dc to dc buck converter

    Abstract: 400V igbt dc to dc buck converter STGE25N100 600V 30A igbt dc to dc buck converter stgh20 AN476 IGBT Driver ic and 20khz resonant converter weight loss AN521
    Text: APPLICATION NOTE IGBTS IN RESONANT CONVERTERS by R. Letor, S. Musumeci, F. Frisina ABSTRACT 2. RESONANT TOPOLOGIES The aim of this paper is to give help to the designers of resonant converters in the selection of IGBTs for use in their circuits. A method of characterizing


    Original     		PDF

    SKM50GB121D

    Abstract: BSM50GB120DN2 lisn 2MBI50F-120 2MBI50L-120 asymmetrical igbt BSM50G*120DN2 2MBI50L120 igbt simulation igbt 3 KA
    Text: Experimental and Simulative Investigations of Conducted EMI Performance of IGBTs for 5 - 10 kVA Converters Abstract Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover,


    Original     		PDF

    STGE25N100

    Abstract: 600V 30A igbt dc to dc buck converter 400V igbt dc to dc buck converter 600V igbt dc to dc buck converter AN476 IGBT application note AN521 STGH20N stgh20 transistor zc
    Text: APPLICATION NOTE IGBTS IN RESONANT CONVERTERS by R. Letor, S. Musumeci, F. Frisina ABSTRACT 2. RESONANT TOPOLOGIES The aim of this paper is to give help to the designers of resonant converters in the selection of IGBTs for use in their circuits. A method of characterizing


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGT1S20N60C3S9A 150oC. TA49178.

    G12N60B3

    Abstract: HGTG12N60B3 HGTG12N60B3D LD26
    Text: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG12N60B3 150oC. 112ns 150oC G12N60B3 HGTG12N60B3 HGTG12N60B3D LD26

    diode js

    Abstract: OF IGBT JS diode JS 9 diode DIODE JS 8 free-wheeling diode
    Text: SKiM 4. Captions of datasheet figures Fig. Description 1 Typical output characteristic, including resistance from terminal to chip RCC´-EE´. Collector –emitter voltage VCE as function of output current IC for given VGE and Tj 2 Maximum rated current IC of one IGBT element as function of the heat sink


    Original     		PDF

    OF IGBT

    Abstract: DATA SHEET OF IGBT step recovery diode inductive pulse load resistor JS diode free-wheeling diode DIODE JS 8
    Text: SEMiX 4. Captions of datasheet figures Fig. Description 1 Typical output characteristic, including resistance from terminal to chip RCC´-EE´. Collector –emitter voltage VCE as function of output current IC for given VGE and Tj 2 Maximum rated current IC of one IGBT element as function of the heat sink


    Original     		PDF

    H9207

    Abstract: high side IGBT driver optocoupler infineon igbt reliability "Optical Couplers" 600v 75a igbt transformer driver high side IGBT driver High Voltage Busbar IGBT application notes igbt module
    Text: Product Information May 2008 MIPAQ serve The new M I P A Q ™ family of Infineon is offering Modules Integrating Power, Application and Quality. One of the first family members is MIPAQ™serve which integrates an IGBT sixpack plus a full set of drivers and temperature measurement on top of the IGBT


    Original     		PDF 133-H9207-X-X-7600 H9207 high side IGBT driver optocoupler infineon igbt reliability "Optical Couplers" 600v 75a igbt transformer driver high side IGBT driver High Voltage Busbar IGBT application notes igbt module

    shockley diode

    Abstract: shockley diode application diode shockley shockley shockley diode datasheet inverter circuits explained IGBT inverter calculation mosfet triggering circuit for inverter Semiconductor Group igbt shockley diode high voltage and high current
    Text: The Reverse Behavior of the NPT-IGBT in its On-State 1 Reverse States of the IGBT in Inverter Circuits Causes for Reverse States The use of the IGBT in inverter circuits does not come without its problems. During the switching cycle the signs of current and voltage applied to the switching device change


    Original     		PDF

    electric motor

    Abstract: power window motor General Electric shunt resistor current motor motor power window
    Text: General Application Note for the PWR Family of Power Resistors Power Resistors from the PWR Series are used in a variety of different configurations of power supplies. The main functions are either to absorb the inrush current caused by the switching action of a power device such as a MOSFET or IGBT or as a shunt, which is


    Original     		PDF O-220 electric motor power window motor General Electric shunt resistor current motor motor power window

    MITSUBISHI IGBT SPICE

    Abstract: IGBT 60A spice model n mosfet depletion pspice model parameters igbt 1200v 600a igbt spice Infineon power diffusion process IGBT Pspice TRANSISTOR 1pz igbt spice model bjt 100a
    Text: Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer* and J.F. Donlon* Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA kang@sc.edu *Department of Engineering


    Original     		PDF

    IGBT MODULES

    Abstract: westcode westcode igbt
    Text: IGBT Modules Page 1 of 5 WTM100BAE12 WTM100CCE12 WTM100CDE12 www.westcode.com WESTCODE Issue 1 : 03/01 IGBT Modules Page 2 of 5 WTM100BAE12 WTM100CCE12 WTM100CDE12 www.westcode.com WESTCODE Issue 1 : 03/01 IGBT Modules Page 3 of 5 WTM100BAE12 WTM100CCE12 WTM100CDE12


    Original     		PDF WTM100BAE12 WTM100CCE12 WTM100CDE12 IGBT MODULES westcode westcode igbt

    g20n60

    Abstract: HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334

    maximum current rating of diodes

    Abstract: aj7v Emitter Turn-Off thyristor IXYS SEMICONDUCTOR
    Text: Symbols and Terms Input capacitance of IGBT Input capacitance of MOSFET Reverse transfer capacitance of IGBT Output capacitance Reverse transfer capacitance of MOSFET di/dt Rate of change of current dv/dt p Critical rate of rise of forward voltage Turn-off energy per pulse at specified junction


    OCR Scan     		PDF D-68623 maximum current rating of diodes aj7v Emitter Turn-Off thyristor IXYS SEMICONDUCTOR

    igbt types

    Abstract: IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Sum mary of various IGBT types. Table 1: Standard devices (page 8)


    OCR Scan     		PDF -12S3 -12S4 -12G3 -12G4 igbt types IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT

    maximum current rating of diodes

    Abstract: No abstract text available
    Text: Symbols and Terms Cc_ K. Rg. •* u ^WB •m i pc w PB fVMl 3-fitfui1 rT ^ ihck ^«UA ^HUC RHWK fVhJS ^VhlU Te *» \ sm L , T VJ Input capacitance of IGBT Input capacitance of MOSFET Reverse transfer capacitance of IGBT Output capacitance Reverse transfer capacitance of MOSFET


    OCR Scan     		PDF

    ixys

    Abstract: No abstract text available
    Text: IXYS Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding requirements of power electronic applications. Our product portfolio of Power MOSFETs, IGBTs, SCHOTTKYs, FREDs, Thyristors,


    OCR Scan     		PDF

    diode 12A3

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF -12D1 -12D1 -06P1 -12P1 -03G4 -03S4 -12A3/A4 diode 12A3

    IGBT snubber for inductive load

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF -12S4 IGBT snubber for inductive load