Untitled
Abstract: No abstract text available
Text: ykiyjxivki 19-1225; Rev 0; 4/97 H i g h - V o l t a g e , L o w - P o w er L i n e a r R e g u l a t o r for N o te b o o k C om p u ters _F e a t u r e s The MAX1615 is a micropower, SOT23-5 linear regula tor that supplies always-on, keep-alive power to CMOS
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MAX1615
OT23-5
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sot143 marking code A5
Abstract: smd code marking 05 sot143 MARKING CODE 3fi marking code FV marking 2n sot23 SMD MARKING CODE LAM smd code marking 3A sot23 marking code LE SOT 23 a51 SOT23
Text: SMD TRIGGER DEVICES PNPN DESCRIPTION • P h ilip s C om ponents trigger devices are p la n ar P-N-P-N devices w h ich can be used as program m able u n iju n c tio n tra n s is to rs (PU T s) o r silicon co n tro lled sw itch es to sw itch relay an d lam p drivers, sen se te m p e ra tu re changes, and
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OT-143
BRY61
BRY62
OT-23
OT-143
T-143
sot143 marking code A5
smd code marking 05 sot143
MARKING CODE 3fi
marking code FV
marking 2n sot23
SMD MARKING CODE LAM
smd code marking 3A sot23
marking code LE SOT 23
a51 SOT23
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aanr
Abstract: No abstract text available
Text: SOT-23 PIN Diodes Features • SURFACE MOUNT PACKAGE ■ LOW CAPACITANCE DIODES ■ LOW LOSS SWITCH DIODES ■ LOW DISTORTION ATTENUATOR DIODES ■ FAST SWITCHING DIODES ■ SINGLE AND DUAL DIODE CONFIGURATIONS ■ TAPE AND REEL PACKAGING AVAILABLE The SOT-23 is a w idely used low cost sem iconductor
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OT-23
OT-23)
aanr
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marking code WM sot23
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3904 Features x Halogen free available upon request by adding suffix "-HF" • Capable of 350mWatts of Power Dissipation and 200mA Ic.
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MMBT3904
350mWatts
200mA
OT-23
OT-23
marking code WM sot23
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Untitled
Abstract: No abstract text available
Text: Sensing and Control SM351LT Home : Products : Sensors : Magnetic Sensors : 1st Level Magnetoresistive Sensors : Nanopow er Nanopow e r Serie s , om nipolar m agnetore s is tive s e nsor IC, high s e nsitivity (7 G typ.), SOT-23, 3000 units /tape and 178 m m [7 in] re e l
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SM351LT
OT-23,
OT-23
OT-23
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lf 3814
Abstract: HSMP4810 HSMP-3800 D323GB90VI HSMP-3820 HSMP-381X HSMP-382X HSMP-386X MARKING CODE MP SOT23 HSMP-389X
Text: T hat mL'nM HEW LETT P a c k a rd Surface M ount PIN D iodes Technical Data HSMP-38XX and HSMP-48XX S eries F ea tu res • D io d es O ptim ized for: Low C urrent Switching Low D istortion Attenuating Ultra-Low Distortion Switching M icrowave Frequency O peration
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HSMP-38XX
HSMP-48XX
OT-23
OT-143
Rate111
HSMP-380X
HSMP-381X
HSMP-382X
HSMP-3880
lf 3814
HSMP4810
HSMP-3800
D323GB90VI
HSMP-3820
HSMP-386X
MARKING CODE MP SOT23
HSMP-389X
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AX995
Abstract: mark EA SOT23-5 AX 995 Nippon capacitors
Text: 19-1266; Rev Ob, 7/97 >M y3XlvVi High-Spaad, R Seranoim r, Low -Voltage, SOT23, R ail-to-R ail I/O C o m p arait* The com m on-m ode input voltage range extends 250mV beyond the supply rails. Input bias current is typically 1,0pA , and in p u t o ffs e t v o lta g e is ty p ic a lly 0.5m V.
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AX996
250mV
40B-737-7600
AX995
mark EA SOT23-5
AX 995
Nippon capacitors
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st smd diode marking code VU
Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage
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BAS40,
BAS40-04,
BAS40-05
BAS40-06
BAS40-07
OT143B
115002/00/04/pp8
st smd diode marking code VU
SMD diode sg 46
sot23 smd code ng
AVN marking SMD
smd code marking PE sot23
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2N2369 SOT-23
Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast
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BAW63
BZX88-C10
BZX88-C11
BZX88-C12
BZX88-C13
BZX88-C15
BZX88-C16
BZX88-C18
BZX88-C20
BZX88-C22
2N2369 SOT-23
BAW66
diode marking w8
BZX88-C7V5
BAW* diode
W6 marking sot-23
baw 92
Z6 DIODE
BZX88C8V2
BAW63A
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Unipolar
Abstract: Tsh282cx tsh282
Text: TSH282 Sensitivity Unipolar Hall Effect Switch TO-92S Pin Definition: 1. VCC 2. GND 3. Output SOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH282 is an unipolar Hall effect sensor IC. It incorporates advanced chopper stabilization technology to provide
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TSH282
O-92S
OT-23
TSH282
Unipolar
Tsh282cx
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Untitled
Abstract: No abstract text available
Text: Fairchild s e m ic o n d u c to r D¡screte p o w er an j signal Technologies Selection Guides Schottky Diodes Schottky D io des Part Number Remarks B AT54 S in g le BAT54A CA B A T 5 4C CC B AT54S i S e rie s MM InA Max 2000 20Q0 2M# m m Mlax , t 1 t ,. t
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BAT54A
AT54S
OT-23
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tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
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JY 222 M capacitor
Abstract: No abstract text available
Text: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408
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Untitled
Abstract: No abstract text available
Text: FM M T493A SOT23 60V NPN SILICON PLANAR M EDIUM POWER PLANAR TRANSISTOR NPN: V CEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: Th i s 60V N PN t r an si st o r p r o v i d es u ser s w i t h perform ance com bining low saturation and high h FE w ith a continuous current capability of 1A, ensuring
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T493A
T493A
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LX5501BSE
Abstract: RF TRANSISTOR SOT23 5 RF amplifier SOT23 5 HBT sot-23
Text: LX5501B InGAP HBT Gain Block TM P RODUCTION D ATA S HEET The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor HBT process (MOCVD). Designed as an easily cascadable 50ohm internally matched gain block, the
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LX5501B
LX5501B
50ohm
OT-23
OT-234-893-2570
LX5501BSE
RF TRANSISTOR SOT23 5
RF amplifier SOT23 5
HBT sot-23
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Untitled
Abstract: No abstract text available
Text: LX5501B InGAP HBT Gain Block TM P RELIMINARY D ATA S HEET The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor HBT process (MOCVD). Designed as an easily cascadable 50ohm internally matched gain block, the
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LX5501B
OT-23
LX5501B
50ohm
APPLICATI2570
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C3V3 tm 5 % TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature
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BZX84C3V3
OT-23
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C33 tm 5% TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature
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BZX84C33
OT-23
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PDF
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FAIRCHILD SOT-23
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C30 tm 5% TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature
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BZX84C30
OT-23
FAIRCHILD SOT-23
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C27 tm 5% TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature
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BZX84C27
OT-23
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flash memory 5v 32m
Abstract: rom 1K x 8 wram samsung Sun Ultra AX AL001 spd65 ksd 201
Text: ORDERING INFORMATION KSV 3100A Nl - B U R N -IN O P T IO N A L (SEE B U R N -IN PR O G R A M ) P A C K A G E TYP E (SEE E A C H SPEC O F D EVIC E) O P E R A T IN G T E M P IC 'S O N L Y B LA NK : S E E IN D IV ID U A L SPEC C : 0 - 7 0 °C I : - 4 0 - 8 5 °C
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OT-23
16bit
100ns
120ns
150ns
200ns
flash memory 5v 32m
rom 1K x 8
wram samsung
Sun Ultra AX
AL001
spd65
ksd 201
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bf862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in
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BF862
MSB003
bf862
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2SK170BL
Abstract: 2SK170GR 2SK163 BFG424F BFG480W 2sk162 hitachi BB155 2N4393 2SK508 2SK210GR
Text: RF マニュアル 第5版 RF 製品の製品およびデザインマニュアル 2004 年 10 月 Semiconductors RF マニュアル 第 5 版 Philips Semiconductors RF 製品の製品およびデザイン・マニュアル Koninklijke Philips Electronics N.V. 2004
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bzx84
Abstract: BZX84C2V4 Y6 70 ZENER DIODE diode ZENER y8 sot23 Y6 ZENER DIODE
Text: BZX84-C2V4 THRU BZX84-C75 Zener Diodes SOT-23 _ FEATURES .118 3 . 0 .016 ( 0 .4 ) ♦ Silicon Planar Power Zener Diodes ♦ The Zener voltages are graded accord ing to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace “C” with “B” for ±2% tol
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BZX84-C2V4
BZX84-C75
OT-23
OD-123
BZT52
OT-23C75
bzx84
BZX84C2V4
Y6 70 ZENER DIODE
diode ZENER y8 sot23
Y6 ZENER DIODE
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