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    ON 33A Search Results

    ON 33A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL8271MAIRZ Renesas Electronics Corporation Digital DC/DC PMBus 33A Module Visit Renesas Electronics Corporation
    ZL9024MAIRZ Renesas Electronics Corporation Digital DC/DC PMBus 33A Module Visit Renesas Electronics Corporation
    ZL9024MAIRZ-T Renesas Electronics Corporation Digital DC/DC PMBus 33A Module Visit Renesas Electronics Corporation
    ISL8271MBIRZ Renesas Electronics Corporation Digital DC/DC PMBus 33A Module Visit Renesas Electronics Corporation
    ISL8271MEVAL1Z Renesas Electronics Corporation Digital DC/DC PMBus 33A Module Evaluation Board Visit Renesas Electronics Corporation
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    ON 33A Price and Stock

    Micro Crystal AG RV-3029-C3-EVALUATION-BOARD-OPTION-B

    Clock & Timer Development Tools RV-3029-C3 EVAL BOARD OPTION B
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    Mouser Electronics RV-3029-C3-EVALUATION-BOARD-OPTION-B
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    TE Connectivity 33A-015D

    15PSID BOARD MOUNT PRESSURE SENSOR
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    Onlinecomponents.com 33A-015D 338
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    TE Connectivity 33A-005D

    5PSID BOARD MOUNT PRESSURE SENSOR
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    Onlinecomponents.com 33A-005D 261
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    TE Connectivity 33A-002D

    2PSID BOARD MOUNT PRESSURE SENSOR
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    Onlinecomponents.com 33A-002D 18
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    TE Connectivity 33A-100D

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    Onlinecomponents.com 33A-100D 15
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    ON 33A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CEP6186/CEB6186 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 33A, RDS ON = 25mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP6186/CEB6186 O-220 O-263 28imum

    Untitled

    Abstract: No abstract text available
    Text: CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS ON = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CED4311/CEU4311 O-251 O-252 O-251 25Maximum

    CEU4311

    Abstract: No abstract text available
    Text: CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS ON = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CED4311/CEU4311 O-251 O-252 O-251 CEU4311

    CRC-10

    Abstract: G723 G.711, G.723.1, G.726, G.728 AF-VTOA-0113 G.729 chip G.711 PCM64 map1 G-728 G.729D
    Text: VoATM-VoIP Interworking on C-5. Architecture & Design Document VoATM-VoIP Interworking on C-5. Architecture & Design Document Version 1.0 Motorola India Electronics Pvt. Ltd . “The Senate” No. 33A, Ulsoor Road Bangalore - 560042 INDIA 2001 Motorola Inc.


    Original     		PDF

    versacon 9

    Abstract: sdg-40 data sheet of 4033 spm-33A versacon PLCP-40 BAZ-33 ac adapter SPM-32A lnt 2
    Text: ACTERNA TEST & MEASUREMENT SOLUTIONS SPM-32A/-33A/-34A/-35A/-36A Selective Level Meters Key Features • For line qualification tests on ISDN, PCM, xDSL, and measurements on analog transmission systems up to 3.5 MHz • Synthesizer for accurate, stable frequency settings


    Original     		PDF SPM-32A/-33A/-34A/-35A/-36A SPM-32A, SPM-33A, SPM-36A SPM32A36A versacon 9 sdg-40 data sheet of 4033 spm-33A versacon PLCP-40 BAZ-33 ac adapter SPM-32A lnt 2

    CEB6186

    Abstract: No abstract text available
    Text: CEP6186/CEB6186 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 33A, RDS ON = 23mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP6186/CEB6186 O-220 O-263 CEB6186

    AN7254

    Abstract: AN7260 AN9321 AN9322 IRFP140N TB334 IRFP140NT
    Text: IRFP140N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRFP140N O-247 AN7254 AN7260 AN9321 AN9322 IRFP140N TB334 IRFP140NT

    LA 47201

    Abstract: 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334
    Text: HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75631P3 • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models


    Original     		PDF HUF75631P3 O-220AB 75631P LA 47201 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334

    U3303

    Abstract: AN-994 IRFR3303 *fr3303
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) U3303 AN-994 IRFR3303 *fr3303

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306 AUTOMOTIVE GRADE AUIRGP50B60PD1 WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ


    Original     		PDF AUIRGP50B60PD1

    U3303

    Abstract: AN-994 IRFR3303 9164 fu120
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) U3303 AN-994 IRFR3303 9164 fu120

    AN-994

    Abstract: IRFR3303
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) AN-994 IRFR3303

    irf540n

    Abstract: MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF540N • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF540N O-220AB irf540n MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN7260 AN9321 AN9322 TB334

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description


    Original     		PDF IRFR/U3303 IRFR3303) IRFU3033) phas245,

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    L770-33AU

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Φ3MOLD LED LAMP L770-33AU L770-33AU Infrared LED Lamp L770-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 770nm. ♦Specifications


    Original     		PDF L770-33AU L770-33AU 770nm. 770nm J-6512

    Untitled

    Abstract: No abstract text available
    Text: High Power Infrared LED 700nm Lead(Pb)Free Product-RoHS Compliant L700-33AU Infrared LED Lamp L700-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 700nm. Features


    Original     		PDF 700nm) L700-33AU L700-33AU 700nm. J-6512.

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED L720-33AU Φ3 MOLD LED LAMP L720-33AU Infrared LED Lamp L720-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 720nm. ♦Specifications


    Original     		PDF L720-33AU L720-33AU 720nm. 720nm J-6512

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED L830-33AU Φ3 MOLD LED LAMP L830-33AU Infrared LED Lamp L830-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 830nm. ♦Specifications


    Original     		PDF L830-33AU L830-33AU 830nm. 830nm J-6512

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED L760-33AU Φ3 MOLD LED LAMP L760-33AU Infrared LED Lamp L760-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 760nm. ♦Specifications


    Original     		PDF L760-33AU L760-33AU 760nm. 760nm J-6512.

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED L735-33AU Φ3 MOLD LED LAMP L735-33AU Infrared LED Lamp L735-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 735nm. ♦Specifications


    Original     		PDF L735-33AU L735-33AU 735nm. 735nm J-6512

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED L700-33AU Φ3 MOLD LED LAMP L700-33AU Infrared LED Lamp L700-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 700nm. ♦Specifications


    Original     		PDF L700-33AU L700-33AU 700nm. 700nm J-6512

    208H

    Abstract: 4R7K 390ad
    Text: 1. M echanical D im ensions: 2. Sch em atic: 3. E lectrical Specification s: OCL: 4 .7 u H ± 1 0% @500KHz 0.1V DCR: 1.62m 0hm s Max Isat: 33Adc Based on 10% Typ Drop in OCL 36.9Adc (Based on 20% Typ Drop in OCL) 6.10 39.0Adc (Based on 30% Typ Drop in OCL)


    OCR Scan     		PDF 500KHz 62m0hms 33Adc 30MHz MIL-STD-202G, UL94V-0 E151556 102mm) 208H 4R7K 390ad