DIODE marking code A34
Abstract: DIODE A34 on marking A34 code
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3/D
DIODE marking code A34
DIODE A34
on marking A34 code
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Untitled
Abstract: No abstract text available
Text: OPA2 34 OPA2 OPA2 234 OPA234 OPA2234 OPA4234 OPA 4234 34 SBOS055B – MAY 1996 – REVISED APRIL 2008 Low-Power, Precision SINGLE-SUPPLY OPERATIONAL AMPLIFIERS FEATURES OPA234 ● WIDE SUPPLY RANGE: Single Supply: VS = +2.7V to +36V Dual Supply: VS = ±1.35V to ±18V
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OPA234
OPA2234
OPA4234
SBOS055B
OPA234
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DIODE A34
Abstract: 403D MBRA340T3 MBRA340T3G A34 Schottky
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
DIODE A34
403D
MBRA340T3
MBRA340T3G
A34 Schottky
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AZHW351
Abstract: DVI switch HDMI to lvttl marking code b23 ANM marking JEDEC B14-38
Text: AZHW351 2.25 Gbps 3-TO-1 HDMI/DVI Switch with High System-Level ESD Protection Features Compatible with HDMI 1.3b z Supports 2.25 Gbps Signaling Rate for 480i/p, 720i/p, and 1080i/p Resolutions up to 12-Bit Color Depth z Integrated Receiver Termination z Selectable Receiver Equalization to
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AZHW351
480i/p,
720i/p,
1080i/p
12-Bit
64-pin
AZHW351
DVI switch
HDMI to lvttl
marking code b23
ANM marking
JEDEC B14-38
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DIODE A34
Abstract: No abstract text available
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3
DIODE A34
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A29 IC
Abstract: 27C512 CXP82000
Text: CXP82000 CMOS 8-bit Single Chip Microcomputer Description The CXP82000 is a CMOS 8-bit single chip microcomputer of piggyback/evaluator combined type, which is developed for evaluating the function of the CXP82052/82060. Piggyback/ evaluator type 100 pin PQFP Ceramic
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CXP82000
CXP82000
CXP82052/82060.
16-bit
250ns
16MHz
32kHz
27C512
100PIN
PQFP-100C-L01
A29 IC
27C512
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SCK-125
Abstract: CXP82832 27C512 CXP82800 A13 MARKING CODE CXP82852 IC MARKING CODE A21 A3664
Text: CXP82800 CMOS 8-bit Single Chip Microcomputer Description The CXP82800 is a CMOS 8-bit single chip microcomputer of piggyback/evaluator combined type, which is developed for evaluating the function of the CXP82832/82840/82852/82860. Piggyback/evaluator 100 pin PQFP Ceramic
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CXP82800
CXP82800
CXP82832/82840/82852/82860.
16-bit
400ns
10MHz
32kHz
27C512
100PIN
PQFP-100C-L01
SCK-125
CXP82832
27C512
A13 MARKING CODE
CXP82852
IC MARKING CODE A21
A3664
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Untitled
Abstract: No abstract text available
Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3G,
NRVBA340T3G
MBRA340T3/D
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zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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w6555
Abstract: DIODE A34
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3/D
w6555
DIODE A34
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Untitled
Abstract: No abstract text available
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3/D
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DIODE A34
Abstract: 403D MBRA340T3 MBRA340T3G
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3/D
DIODE A34
403D
MBRA340T3
MBRA340T3G
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Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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128Mb
144Mb
HS032N02E
HS032N02D
HS032N02C
HS032N02B
HS032E02E
HS032E02D
HS032E02C
HS032E02B
Device marking code B12 B13 B14 B15 B16
MARKING b56
Device marking code B52
marking A78
a80 marking code
marking code B49
a64 marking code
A45 interface
marking code B38
HS032E02B
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MBRA340T3-D
Abstract: 403D MBRA340T3 MBRA340T3G DIODE A34
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3/D
MBRA340T3-D
403D
MBRA340T3
MBRA340T3G
DIODE A34
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MBRA340T3G
Abstract: DIODE marking code A34
Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3G,
NRVBA340T3G
MBRA340T3/D
MBRA340T3G
DIODE marking code A34
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA340T3G,
NRVBA340T3G
MBRA340T3/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3G,
NRVBA340T3G
MBRA340T3/D
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.283 7.2 0.260(6.6) For surface mounted applications.
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FM301
FM307
MIL-S-19500
DO-214AB
MIL-STD-750,
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DIODE marking code A34
Abstract: A35 diode DIODE A34 A37 diode a35 marking code marking A33 marking codes A32 FM301 marking code A35 diode FM303
Text: A31-A37 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8) 0.144(3.6)
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A31-A37
MIL-S-19500
DO-214AB
MIL-STD-750,
DIODE marking code A34
A35 diode
DIODE A34
A37 diode
a35 marking code
marking A33
marking codes A32
FM301
marking code A35 diode
FM303
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DIODE A34
Abstract: A37 diode DIODE marking code A34 A35 diode a35 marking code marking codes A32 FM301 FM302 FM303 FM304
Text: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.
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FM301
FM307
MIL-S-19500
DO-214AB
MIL-STD-750,
DIODE A34
A37 diode
DIODE marking code A34
A35 diode
a35 marking code
marking codes A32
FM302
FM303
FM304
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DIODE A34
Abstract: DIODE marking code A34 A37 diode A35 diode marking codes A32 FM301 FM302 FM303 FM304 FM305
Text: Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.
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FM301
FM307
MIL-S-19500
DO-214AB
MIL-STD-750,
DIODE A34
DIODE marking code A34
A37 diode
A35 diode
marking codes A32
FM302
FM303
FM304
FM305
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marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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256MB
288Mb
HS256N08E
HS256N08D
HS256N08C
HS256N08B
HS256E08E
HS256E08D
HS256E08C
marking code B49
MARKING b56
marking A71
marking A46 B36
Device marking code B12 B13 B14 B15 B16
a80 marking code
a64 marking code
marking code B38
A45 interface
A77 marking
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Untitled
Abstract: No abstract text available
Text: TMDS351 SLLS840B – MAY 2007 – REVISED JULY 2011 www.ti.com 2.5 Gbps 3-TO-1 DVI/HDMI SWITCH Check for Samples: TMDS351 FEATURES 1 • • • • • • • Compatible with HDMI 1.3a Supports 2.5 Gbps Signaling Rate for 480i/p, 720i/p, and 1080i/p Resolutions up to 12-Bit
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TMDS351
SLLS840B
480i/p,
720i/p,
1080i/p
12-Bit
64-Pin
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