Schottky
Abstract: No abstract text available
Text: RB551V-40 Taiwan Semiconductor Small Signal Product Schottky Barrier Diode FEATURES - Surface Mount Device Type - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code SOD-323 MECHANICAL DATA
|
Original
|
PDF
|
RB551V-40
OD-323
OD-323
MIL-STD-202,
C/10s
RB551V-40)
S1402011
Schottky
|
Untitled
Abstract: No abstract text available
Text: ES0406D1 Taiwan Semiconductor Small Signal Product Fast Recovery Rectifier Diode FEATURES - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code
|
Original
|
PDF
|
ES0406D1
OD-123
OD-123
MIL-STD-202,
C/10s
LIMITD0406D1
ESD0406D1-M0
ESD0406D1
S1402008
|
Untitled
Abstract: No abstract text available
Text: RS1006D1 Taiwan Semiconductor Small Signal Product Fast Recovery Rectifier Diode FEATURES - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code
|
Original
|
PDF
|
RS1006D1
OD-123
OD-123
MIL-STD-202,
C/10s
RS1006D1-M0
S1402007
|
Untitled
Abstract: No abstract text available
Text: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass Case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
|
Original
|
PDF
|
BZX85C3V3
BZX85C56
DO-41
|
trace code TO-220
Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram
|
Original
|
PDF
|
FJP3307D
FJP3307D
O-220
FJP3307DH1
FJP3307DH1TU
FJP3307DH2
FJP3307DH2TU
FJP3307DTU
trace code TO-220
J3307D-1
SWITCH IC
J3307
transistor Electronic ballast
3307D
|
ISO 2768-mk
Abstract: Fabry-Perot-Laser-Diode ISO-2768-mK
Text: ZL60404 1.25 Gbps, 1310 nm Uncooled Fabry-Perot Laser Diode Module with Monitor Data Sheet December 2003 Ordering Information ZL60404TBD ZL60404TDD ZL60404TED ZL60404TFD TO-56 with lens ST type connector SC type connector FC type connector -40°C to +85°C
|
Original
|
PDF
|
ZL60404
ZL60404TBD
ZL60404TDD
ZL60404TED
ZL60404TFD
ZL60404
ISO 2768-mk
Fabry-Perot-Laser-Diode
ISO-2768-mK
|
ISO 2768-mk
Abstract: ZL60401 ZL60401TBD ZL60401TDD ZL60401TED ZL60401TFD TO56 X10CrNiS18-9 n713 TO-56 package laser diode
Text: ZL60401 622 Mbps, 1310 nm Uncooled Fabry-Perot Laser Diode Module with Monitor Data Sheet December 2003 Ordering Information ZL60401TBD ZL60401TDD ZL60401TED ZL60401TFD TO-56 with lens ST type connector SC type connector FC type connector -40°C to +85°C
|
Original
|
PDF
|
ZL60401
ZL60401TBD
ZL60401TDD
ZL60401TED
ZL60401TFD
ZL60401
ISO 2768-mk
ZL60401TBD
ZL60401TDD
ZL60401TED
ZL60401TFD
TO56
X10CrNiS18-9
n713
TO-56 package laser diode
|
ISO-2768-mK
Abstract: X10CrNiS18-9 ISO 2768-mk Fabry-Perot-Laser-Diode ZL60402TBD TO-56 with lens 5AN7 ISO 2768 mk STM-16 ZL60402 ZL60402TBD
Text: ZL60402 2.5 Gbps, 1310 nm Uncooled Fabry-Perot Laser Diode Module with Monitor Data Sheet December 2003 Ordering Information ZL60402TBD ZL60402TDD ZL60402TED ZL60402TFD TO-56 with lens ST type connector SC type connector FC type connector -40°C to +85°C
|
Original
|
PDF
|
ZL60402
ZL60402TBD
ZL60402TDD
ZL60402TED
ZL60402TFD
ZL60402
ISO-2768-mK
X10CrNiS18-9
ISO 2768-mk
Fabry-Perot-Laser-Diode
ZL60402TBD TO-56 with lens
5AN7
ISO 2768 mk
STM-16
ZL60402TBD
|
DIODE 85c 5V1
Abstract: zener diode 85C 3v3 5.6V zener diode code color Zener diode 85c 3v9 zener 5v6 1w zener diode 85C 4v3 diode zener 3v9 DIODE 85c 4V3 zener diode voltage list 1.2v BZX85C18
Text: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG
|
Original
|
PDF
|
BZX85C3V3
BZX85C56
BZX85C56
DO-41
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
DIODE 85c 5V1
zener diode 85C 3v3
5.6V zener diode code color
Zener diode 85c 3v9
zener 5v6 1w
zener diode 85C 4v3
diode zener 3v9
DIODE 85c 4V3
zener diode voltage list 1.2v
BZX85C18
|
F05U60S
Abstract: F05U60 FFPF05U60STTU F05U6 FFPF05U60STU AN4149
Text: FFPF05U60S FFPF05U60S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits
|
Original
|
PDF
|
FFPF05U60S
O-220F
FFPF05U60S
AB-40:
AN-4149:
FFPF05U60STTU
FFPF05U60STU
F05U60S
F05U60
F05U6
AN4149
|
DIODE 85c 5V1
Abstract: BZX85C18
Text: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG
|
Original
|
PDF
|
BZX85C3V3
BZX85C56
BZX85C56
DO-41
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
DIODE 85c 5V1
BZX85C18
|
BZX85C18
Abstract: No abstract text available
Text: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG
|
Original
|
PDF
|
BZX85C3V3
BZX85C56
DO-41
20mhtml
\TEMP\BZX85C43
16-Aug-2007
BZX85C43
BZX85C43
BZX85C18
|
BZX85C18
Abstract: No abstract text available
Text: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG
|
Original
|
PDF
|
BZX85C3V3
BZX85C56
DO-41
20mhtml
\TEMP\BZX85C56
16-Aug-2007
BZX85C56
BZX85C18
|
3.9V ZENER DIODE
Abstract: bzx85c15 BZX85C18
Text: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG
|
Original
|
PDF
|
BZX85C3V3
BZX85C56
DO-41
20mhtml
\TEMP\BZX85C39
16-Aug-2007
BZX85C39
BZX85C39
3.9V ZENER DIODE
bzx85c15
BZX85C18
|
|
zener diodes color coded
Abstract: colour code diode zener 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A
Text: 1N4728A - 1N4758A Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TJ, TSTG Ta = 25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Parameter 1.0 W Derate above 50°C
|
Original
|
PDF
|
1N4728A
1N4758A
DO-41
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4758A
zener diodes color coded
colour code diode zener
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
|
1N4745A
Abstract: 1W ZENER DIODE zener diode marking code pm Marking 47
Text: 1N4728A - 1N4758A Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TJ, TSTG Ta = 25°C unless otherwise noted Value Units Power Dissipation @ TL 50C, Lead Length = 3/8” Parameter 1.0 W Derate above 50C
|
Original
|
PDF
|
1N4728A
1N4758A
1N4758A
DO-41
1N4729A
1N4730A
1N4731A
1N4732A
1N4745A
1W ZENER DIODE
zener diode marking code pm
Marking 47
|
M1MA151AT1
Abstract: M1MA151AT1G M1MA152AT1 M1MA152AT1G
Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
|
Original
|
PDF
|
M1MA151AT1,
M1MA152AT1
SC-59
M1MA151AT1r
M1MA151AT1/D
M1MA151AT1
M1MA151AT1G
M1MA152AT1
M1MA152AT1G
|
IXYS DATE CODE
Abstract: No abstract text available
Text: DSA 120X200LB Schottky Diode Gen2 VRRM = 200 V IDAV = 2x 65 A VF = 0.67 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 Part number DSA120X200LB n.c. A1 9 8 7 Preliminary data Iso la to ted he su at rfa sin ce k 1 3 2 4 6 5 K2
|
Original
|
PDF
|
120X200LB
DSA120X200LB
E72873
20130613a
IXYS DATE CODE
|
MMBV105GLT1
Abstract: MMBV105GLT1G
Text: MMBV105GLT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com
|
Original
|
PDF
|
MMBV105GLT1
MMBV105GLT1/D
MMBV105GLT1
MMBV105GLT1G
|
MMVL105GT1
Abstract: MMVL105GT1G
Text: MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com
|
Original
|
PDF
|
MMVL105GT1
MMVL105GT1/D
MMVL105GT1
MMVL105GT1G
|
5M MARKING CODE SCHOTTKY DIODE
Abstract: RB521S30T1G Diode marking CODE 5M SOD RB521S30T1
Text: RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable
|
Original
|
PDF
|
RB521S30T1
RB521S30T1/D
5M MARKING CODE SCHOTTKY DIODE
RB521S30T1G
Diode marking CODE 5M SOD
RB521S30T1
|
M1MA151WKT1
Abstract: M1MA151WKT1G M1MA152WKT1 M1MA152WKT1G
Text: M1MA151WKT1, M1MA152WKT1 Preferred Device Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low
|
Original
|
PDF
|
M1MA151WKT1,
M1MA152WKT1
SC-59
M1MA151WKT1
M1MA151WKT1/D
M1MA151WKT1
M1MA151WKT1G
M1MA152WKT1
M1MA152WKT1G
|
Untitled
Abstract: No abstract text available
Text: 1SS400CS Taiwan Semiconductor Small Signal Product High Speed SMD Switching Diode FEATURES - Fast switching device trr<4.0ns - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
|
Original
|
PDF
|
1SS400CS
OD-923F
OD-923F
MIL-STD-202,
C/10s
1SS400CS
1SS400CS-M0
S1402006
|
Diode marking CODE 5M SOD
Abstract: 5M MARKING CODE SCHOTTKY DIODE RB521S30T1G 1n05 NSVRB521 RB521S30T1
Text: RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable
|
Original
|
PDF
|
RB521S30T1G,
NSVRB521S30T1G,
RB521S30T5G
OD-523
RB521S30T1/D
Diode marking CODE 5M SOD
5M MARKING CODE SCHOTTKY DIODE
RB521S30T1G
1n05
NSVRB521
RB521S30T1
|