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    ON SEMICONDUCTOR MARKING C21 Search Results

    ON SEMICONDUCTOR MARKING C21 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR MARKING C21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2171

    Abstract: No abstract text available
    Text: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation  Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design


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    PDF C2171/2 C2171/2PX2 OT23-6 DS-5175-1406 3-Jun-2014 C2171

    220 ac to 24 dc SMPS charger circuit diagram

    Abstract: SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS 5V SMPS charger circuit diagram 220 ac voltage regulator SMPS without transformer C2162DX2 MJE130 PTXX SMPS SOT23-6 sot23-6 marking code C2161DX2
    Text: C2161DX2 and C2162DX2 Datasheet Primary Sensing SMPS Controller For 5* USB Charging Applications ADVANTAGES • • • • • • • • Suitable for applications with or without cable such as USB chargers Can meet USB OMTP undershoot requirement < 30 mW no-load power consumption 5* rating


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    PDF C2161DX2 C2162DX2 OT23-6 DS-3785-1006 11-Jun-2010 220 ac to 24 dc SMPS charger circuit diagram SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS 5V SMPS charger circuit diagram 220 ac voltage regulator SMPS without transformer MJE130 PTXX SMPS SOT23-6 sot23-6 marking code

    Q62702-C2136

    Abstract: Q62702-C2137
    Text: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137


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    PDF Q62702-C2136 Q62702-C2137 OT-223 Q62702-C2136 Q62702-C2137

    Q62702-C2134

    Abstract: Q62702-C2135
    Text: PNP Silicon Darlington Transistors BCP 28 BCP 48 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 29/49 NPN ● Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134 Q62702-C2135


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    PDF Q62702-C2134 Q62702-C2135 OT-223 Q62702-C2134 Q62702-C2135

    Untitled

    Abstract: No abstract text available
    Text: [ /Title CD74H C21, CD74H CT21 /Subject (High Speed CMOS Logic Dual 4Input CD54HC21, CD74HC21, CD74HCT21 Data sheet acquired from Harris Semiconductor SCHS131C High-Speed CMOS Logic Dual 4-Input AND Gate August 1997 - Revised September 2003 Features Description


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    PDF CD74H CD54HC21, CD74HC21, CD74HCT21 SCHS131C CD74HCT21

    PW350s

    Abstract: 01673
    Text: CYStech Electronics Corp. Spec. No. : C214M3 Issued Date : 2006.11.10 Revised Date : Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTD1383M3 Description • The BTD1383M3 is a darlington amplifier transistor. • Pb-free package Symbol Outline


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    PDF C214M3 BTD1383M3 BTD1383M3 OT-89 UL94V-0 PW350s 01673

    BTNA06N3

    Abstract: MARKING 1G TRANSISTOR
    Text: Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application.


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    PDF C216N3 BTNA06N3 BTNA06N3 100mA/10mA BTPA56N3. OT-23 UL94V-0 MARKING 1G TRANSISTOR

    BTNA14N3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2006.07.11 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTNA14N3 Description • The BTNA14N3 is a darlington amplifier transistor • Complementary to BTPA64N3.


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    PDF C214N3-H BTNA14N3 BTNA14N3 BTPA64N3. OT-23 UL94V-0

    BTD2568L3

    Abstract: No abstract text available
    Text: Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2006.01.11 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD2568L3 Features • High BVCEO, 400V minimum • Pb-free package Symbol Outline BTD2568L3 SOT-223


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    PDF C211L3 BTD2568L3 OT-223 UL94V-0 BTD2568L3

    c215a

    Abstract: 1902 transistor BTNA13A3 BTNA14A3
    Text: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit


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    PDF C215A3 BTNA13A3 BTNA14A3 BTPA63A3. UL94V-0 BTNA14A3 c215a 1902 transistor BTNA13A3

    C214A

    Abstract: 1902 transistor CYStech Electronics BTNA14A3
    Text: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit


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    PDF C214A3 BTNA14A3 BTNA14A3 BTPA64A3. UL94V-0 C214A 1902 transistor CYStech Electronics

    1204 5a

    Abstract: CYStech Electronics BTNA06N3
    Text: Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application.


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    PDF C216N3 BTNA06N3 BTNA06N3 100mA/10mA BTPA56N3. OT-23 UL94V-0 1204 5a CYStech Electronics

    C214A

    Abstract: 1902 transistor BTNA14A3
    Text: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : 2005.11.30 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3.


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    PDF C214A3 BTNA14A3 BTNA14A3 BTPA64A3. UL94V-0 C214A 1902 transistor

    BTD1383L3

    Abstract: No abstract text available
    Text: Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1383L3 Description • The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3 SOT-223


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    PDF C214L3 BTD1383L3 BTD1383L3 OT-223 UL94V-0

    BTD2568L3

    Abstract: No abstract text available
    Text: Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD2568L3 Features • High BVCEO, 400V minimum Symbol Outline BTD2568L3 SOT-223 C E C B:Base C:Collector


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    PDF C211L3 BTD2568L3 OT-223 UL94V-0 BTD2568L3

    sot-23 MARKING CODE 3d

    Abstract: 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D
    Text: CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.


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    PDF C210N3-H BTNA44N3 10mA/1mA. BTPA94N3 OT-23 UL94V-0 sot-23 MARKING CODE 3d 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D

    transistor c202

    Abstract: C202 C204 C206 C210 CMR2-02 CMR2-04 CMR2-06 CMR2-10 TR13
    Text: Central CMR2-02 CMR2-04 CMR2-06 CMR2-10 TM Semiconductor Corp. GENERAL PURPOSE RECTIFIER 2.0 AMP, 200 THRU 1,000 VOLTS FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOT TO LOT CONSISTENCY • GLASS PASSIVATED CHIP


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    PDF CMR2-02 CMR2-04 CMR2-06 CMR2-10 26-September transistor c202 C202 C204 C206 C210 CMR2-02 CMR2-04 CMR2-06 CMR2-10 TR13

    b2 diode

    Abstract: marking 62 marking code b3
    Text: CM6200 Advance Information EMI Filters with ESD Protection for Microphone Interface http://onsemi.com Description ON Semiconductor’s CM6200 is a 3x3, 8−bump EMI filter with ESD protection device for microphone interface applications in a CSP form factor, 0.4 mm pitch. The CM6200 is fully compliant with


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    PDF CM6200 567CF CM6200 CM6200/D b2 diode marking 62 marking code b3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134


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    PDF Q62702-C2134 Q62702-C2135 OT-223 01BGLBS 323SbDS

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134


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    PDF Q62702-C2134 Q62702-C2135 OT-223 BCP48

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistors • • • • BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types: BCP 28/48 PNP Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136


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    PDF Q62702-C2136 Q62702-C2137 OT-223 CHP00252

    Untitled

    Abstract: No abstract text available
    Text: Centrar CMR2-02 CMR2-04 CMR2-06 CMR2-10 Semiconductor Corp. GENERAL PURPOSE RECTIFIER 2.0 AMP, 200 THRU 1,000 VOLTS FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOTTO LOT CONSISTENCY • GLASS PASSIVATED CHIP • "C" BEND CONSTRUCTION PROVIDES


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    PDF CMR2-02 CMR2-04 CMR2-06 CMR2-10 CPD06 26-September

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    Untitled

    Abstract: No abstract text available
    Text: Central” CMR2-02 CMR2-04 CMR2-06 CMR2-10 Semiconductor Corp. GENERAL PURPOSE RECTIFIER 2.0 AMP, 200 THRU 1,000 VOLTS FEATURES: • • • • • • LOW COST SPECIAL SELECTIONS AVAILABLE HIGH RELIABILITY SUPERIOR LOT TO LOT CONSISTENCY GLASS PASSIVATED CHIP


    OCR Scan
    PDF CMR2-02 CMR2-04 CMR2-06 CMR2-10 26-September r2-06