TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126
TRANSISTOR AH-16
TRANSISTOR bH-16
equivalent of transistor bc212 bc 214
transistor marking code SOT-23 2FX
2907A PNP bipolar transistors
SILICON TRANSISTOR FS 2025
marking JV SOD323
bf245 replacement
GI 312 diode
msd601
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marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
marking 513 SOD-323
transistor marking code SOT-23 2FX
BC449 equivalent
DTD113
BC548 hie hre hfe steel package
MPSW45A replacement
BC449A equivalent
2n4401 free transistor equivalent book
power tmos
BF256
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CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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Original
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DL126/D
Nov-2001
r14525
DL126/D
CBF493S
BC337 hie hre hfe
BC449 equivalent
transistor marking code SOT-23 2FX
marking 513 SOD-323
bc213 equivalent
MECL 10000
bc237c equivalent
diode Marking code jv3 f
BAV70 SOT-23 JJ
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j5021
Abstract: J5021-O J5021-R FJPF5021
Text: FJPF5021 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs Typ. • Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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FJPF5021
O-220F
FJPF5021
FJPF5021OTU
FJPF5021RTU
j5021
J5021-O
J5021-R
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J5027-R
Abstract: J5027R transistor j5027-r j5027 FJP5027TU transistor J5027R FJP5027OTU TO220 Semiconductor Packaging FJP5027
Text: FJP5027 FJP5027 High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value
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FJP5027
O-220
FJP5027
FJP5027OTU
FJP5027RTU
FJP5027TU
J5027-R
J5027R
transistor j5027-r
j5027
transistor J5027R
TO220 Semiconductor Packaging
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j5021
Abstract: J5021-O
Text: FJP5021 FJP5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs Typ. • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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FJP5021
O-220
FJP5021
FJP5021OTU
j5021
J5021-O
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BAT 545
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-A66
P-SOT-143-4-6
EHA0701!
BAT 545
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-A66
P-SOT-143-4-6
EHD07Ã
023SbOS
015Q341
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tp394
Abstract: tp182 marking code diode R12 sot23-6 tp154 tp230 Lattice Semiconductor Package Diagrams 256-Ball fpBGA marking F3 sot23-6 TP147 TP265 HDR10X1
Text: MachXO Standard Evaluation Board - Revision 000 User’s Guide April 2007 Revision: EB20_01.2 Lattice Semiconductor MachXO Standard Evaluation Board - Revision 000 User’s Guide Introduction The MachXO Standard Evaluation board provides a convenient platform to evaluate electrical characteristics of the
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MachXO640
256-ball
33MHz
tp394
tp182
marking code diode R12 sot23-6
tp154
tp230
Lattice Semiconductor Package Diagrams 256-Ball fpBGA
marking F3 sot23-6
TP147
TP265
HDR10X1
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Semiconductor 1346 transistor
Abstract: DIODE bfp 86 marking 53 Sot-343
Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1591
OT-343
Semiconductor 1346 transistor
DIODE bfp 86
marking 53 Sot-343
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2SJ507
Abstract: No abstract text available
Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance
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2SJ507
2SJ507
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BF 914 transistor
Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1592
OT-343
BF 914 transistor
transistor R 405
transistor bf 405
transistor 1546
405 marking
transistor s parameters noise
transistor BF 914
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: MMBR911LT1
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR911LT1 Freescale Semiconductor, Inc. ARCHIVE INFORMATION • High Gain–Bandwidth Product fT = 7.0 GHz Typ @ 30 mA
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MMBR911LT1/D
MMBR911LT1
A/500
RF NPN POWER TRANSISTOR 2.5 GHZ
MMBR911LT1
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Untitled
Abstract: No abstract text available
Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance
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2SJ509
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TEA 1091
Abstract: DIODE bfp 86 siemens rs 1091
Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1591
OT-343
IS21I2
235LG5
E35bD5
01EEQQ0
TEA 1091
DIODE bfp 86
siemens rs 1091
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siemens rs 1003
Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability
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VPS05605
Q62702-F1592
OT-343
-j100
Sep-09-1998
siemens rs 1003
TRANSISTOR BI 187
Q62702-F1592
VPS05605
TS1440
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2SJ509
Abstract: J509
Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance
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2SJ509
2SJ509
J509
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420 NPN Silicon RF Transistor
Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability
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VPS05605
Q62702-F1591
OT-343
45GHz
-j100
Jul-14-1998
420 NPN Silicon RF Transistor
transistor 1346
Q62702-F1591
BFP420
VPS05605
RNF50
TP66
zs transistor
transistor fc 1013
Semiconductor 1346 transistor
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J507
Abstract: 2SJ507
Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance
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2SJ507
J507
2SJ507
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2SJ507
Abstract: J507 transistor free
Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance
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2SJ507
2SJ507
J507
transistor free
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Q62702-F1590
Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability
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VPS05605
Q62702-F1590
OT-343
50Ohm
-j100
Sep-09-1998
Q62702-F1590
5198 transistor equivalent
Transistor C 5198
VPS05605
transistor BI 342 746
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J509
Abstract: 2SJ509
Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance
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2SJ509
J509
2SJ509
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transistor b 1238
Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1
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VPS05605
Q62702-F1794
OT-343
50Ohm
45GHz
-j100
Sep-09-1998
transistor b 1238
Q62702-F1794
transistor bf 520
transistor bfp 520
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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Q62702-F1215
T-143
E3Sb05
23SLQ5
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