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    Abstract: No abstract text available
    Text: OPA8831 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol


    Original     		PDF OPA8831 100mA --------------------130um --------------------10mil

    po102

    Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883
    Text: OPA8831 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol


    Original     		PDF OPA8831 100mA --------------------130um --------------------10mil po102 700 nm LED bare chip OPA8831 tf 400 OPA883