8351
Abstract: 4CV100,000C 4CV100000 "RF Amplifier" RF Amplifier 500 watts rf power amplifier 4CV100 af amplifier 4CV1
Text: The 4CV100,00C/8351 is recommended for use as a Class C RF amplifier or oscillator, a Class AB, push-pull AF amplifier or modulator. The 4CV100,000/8351 is also useful as a plate and screen modulated Class C RF amplifier. Class of Operation Characteristics
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4CV100
00C/8351
00AB1
4CW50
000C/8351
8351
4CV100,000C
4CV100000
"RF Amplifier"
RF Amplifier
500 watts rf power amplifier
af amplifier
4CV1
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8349
Abstract: 4CX35,000C 4cx35000 4CX35 4CX35000c "RF Amplifier" 8823
Text: The 4CX35,000/8349 is intended for use at the 50 to 150 kW output power level. It is recommended for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB pushpull AM amplifier or modulator Class of Operation Characteristics
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4CX35
35AB1
000C/
000C/8349
8349
4CX35,000C
4cx35000
4CX35000c
"RF Amplifier"
8823
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5CX1500A
Abstract: EIMAC* 5CX1500A 5CX1500B sk-840 4cx1500a 5cx1500 CX1500 CX1500A SK806 SK-806
Text: The 5CX1500A is designed for use as a Class C rf power amplifier in radio frequency applications. For FM broadcast service, the 5CX1500B is recommended in place of the 5CX1500A, for improved reliability. Class of Operation Characteristics Plate Dissipation Max.
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5CX1500A
5CX1500B
5CX1500A,
CX1500A
5CX1500A
EIMAC* 5CX1500A
sk-840
4cx1500a
5cx1500
CX1500
CX1500A
SK806
SK-806
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3cx20000a7
Abstract: 3CX2000 500 watts power amplifier 500 watts amplifier "Power Triode" "RF Amplifier" 211 power Triode amp classes c 3CX20 operation of class c amplifier
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX20,000A7 The Eimac 3CX20,000A7 is a high-mu power triode intended for use as a zero bias Class B RF amplifier or Class C power amplifier or oscillator. Class B operation with zero grid bias offers circuit simplicity. In
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3CX20
000A7
000A7
ttings\carolyn\Desktop\Objects\3cx20000a7
3cx20000a7
3CX2000
500 watts power amplifier
500 watts amplifier
"Power Triode"
"RF Amplifier"
211 power Triode
amp classes c
operation of class c amplifier
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3CW30,000H7
Abstract: 3CW30
Text: The 3CW30,000H7 is a high-mu power triode designed for use as a zero bias Class B RF amplifier, Class C power amplifier or oscillator, or for voltage regulator service. Input of 48 kW is permissible up to 110 MHz. Plentiful reserve emission is available from its one kilowatt filament. Class B operation
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3CW30
000H7
000H7
4CW50
3CW30,000H7
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3CX10000A7
Abstract: amplifier RF CLASS B power transistor audio amplifier 500 watts "Power Triode" 200 watt audio amplifier 5 volts audio amplifier Power Triode 000A7 Eimac 8160
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX10,000A7/8160 The Eimac 3CX10,000A7/8160 is a high-mu power triode and is intended for use as a zero bias Class B amplifier an audio or RF applications, or as a Class C amplifier, CW or modulated. Operation in a Class B with
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3CX10
000A7/8160
000A7/8160
s\carolyn\Desktop\Objects\3cx10000a7-8160
3CX10000A7
amplifier RF CLASS B
power transistor audio amplifier 500 watts
"Power Triode"
200 watt audio amplifier
5 volts audio amplifier
Power Triode
000A7
Eimac 8160
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indiana general
Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
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S175-50
5-240pF
75-480pF
2700pF
F627-9,
F625-9,
F624-19,
F627-8,
indiana general
F624-19
F627
F627-8
S-175
hf power amplifiers 2-30 mhz
BYISTOR
BYI-1
F625-9
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s175-50
Abstract: No abstract text available
Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
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S175-50
S175-50
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Untitled
Abstract: No abstract text available
Text: 2SC2859LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 0.4
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2SC2859LT1
OT-23
2SA1298LT1
500mA
225mW
500mA,
300uS
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MMBT8050LT1
Abstract: MMBT8050
Text: MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to MMPT8550LT1 Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 1. 1.BASE 2.EMITTER 3.COLLECTOR
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MMBT8050LT1
OT-23
MMPT8550LT1
500mA
225mW
MMBT8050LT1
MMBT8050
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motorola mrf237
Abstract: MOTOROLA SELECTION mrf237 MRF846 MRF229 2N3553 motorola MRF627 MRF227 MRF237 MRF604 2N4427
Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.
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MRF229
MRF604
2N4427
MRF553
317D-01
MRF607
2N6255
2N3553
MRF237*
MRF207
motorola mrf237
MOTOROLA SELECTION mrf237
MRF846
motorola MRF627
MRF227
MRF237
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MRF648
Abstract: MRF515 Motorola transistors MRF646 motorola MRF515 Motorola transistors MRF630 MRF646 Motorola transistors MRF629 Transistor MRF630 Motorola transistors MRF648 MRF644
Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.
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OCR Scan
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MRF229
MRF604
2N4427
MRF553
317D-01
MRF607
2N6255
2N3553
MRF237*
MRF207
MRF648
MRF515
Motorola transistors MRF646
motorola MRF515
Motorola transistors MRF630
MRF646
Motorola transistors MRF629
Transistor MRF630
Motorola transistors MRF648
MRF644
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MOTOROLA SELECTION mrf237
Abstract: motorola mrf237 MRF515 Motorola transistors MRF630 MRF237 2N3553 Transistor 2N3866 2n3553 to-39 mrf237 MOTOROLA 2N3553 motorola
Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.
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MRF229
MRF604
2N4427
MRF553
317D-01
MRF607
2N6255
2N3553
MRF237*
MRF207
MOTOROLA SELECTION mrf237
motorola mrf237
MRF515
Motorola transistors MRF630
MRF237
Transistor 2N3866
2n3553 to-39
mrf237 MOTOROLA
2N3553 motorola
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MOTOROLA SELECTION mrf237
Abstract: mrf237 MOTOROLA MRF239 MRF260 MRF212 MRF4070 2N6255 MOTOROLA Motorola 2N6080 motorola mrf237 MRF227
Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.
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OCR Scan
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MRF229
MRF604
2N4427
MRF553
317D-01
MRF607
2N6255
2N3553
MRF237*
MRF207
MOTOROLA SELECTION mrf237
mrf237 MOTOROLA
MRF239
MRF260
MRF212
MRF4070
2N6255 MOTOROLA
Motorola 2N6080
motorola mrf237
MRF227
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MRF309
Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604
Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.
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MRF229
MRF604
2N4427
MRF553
317D-01
MRF607
2N6255
2N3553
MRF237*
MRF207
MRF309
2N3866 MOTOROLA
mrf237 MOTOROLA
MRF390
TO205AD
motorola mrf237
MRF227
MRF329
MRF5177
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR SS8050 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • C om plim entary to SS8550 • C ollecto r C urrent: lc=1.5A • C ollecto r D issipation: PC= 2 W T c=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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SS8050
SS8550
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3050 transistor
Abstract: ss8550 TRANSISTOR transistor 3050 transistor SS8550 SS8050 SS8550 SS8550 PNP
Text: PNP EPITAXIAL SILICON TRANSISTOR SS8550 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO -92 • C om plim entary to SS8050 • C ollector C urrent: lc= -1 -5A • C ollector D issipation: PC= 2 W Tc=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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SS8550
SS8050
-100nA,
3050 transistor
ss8550 TRANSISTOR
transistor 3050
transistor SS8550
SS8050
SS8550
SS8550 PNP
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3050 transistor
Abstract: transistor 3050 SS8050 SS8550 transistor SS8550 ss8550 TRANSISTOR
Text: PNP EPITAXIAL SILICON TRANSISTOR SS8550 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO -92 • C om plim entary to SS8050 • C ollecto r C urrent: lc= -1 .5A • C ollecto r D issipation: PC= 2 W T c=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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SS8550
SS8050
-100nA,
3050 transistor
transistor 3050
SS8050
SS8550
transistor SS8550
ss8550 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.
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SS9012
625mW
-500m
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TRANSISTOR ss8050
Abstract: transistor SS8550 SS8050 SS8550
Text: NPN EPITAXIAL SILICON TRANSISTOR SS8050 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO -92 • C om plim entary to SS8550 • C o lle c to r C u rre n t: lc=1 5 A • C ollector D issipation: PC= 2 W Tc=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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SS8050
SS8550
100nA,
TRANSISTOR ss8050
transistor SS8550
SS8050
SS8550
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.
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SS9012
-500mA)
S9013
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LC 500-S
Abstract: SS9013 SS9012
Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (lc=500m A) C om plem entary to S S9012 Excellent hpE linearity.
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SS9013
625mW)
500mA)
SS9012
100nA,
LC 500-S
SS9013
SS9012
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PDF
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SS9012
Abstract: SS9013
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hpE linearity.
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OCR Scan
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SS9012
625mW)
-500mA)
SS9013
-100nA,
g-500
SS9012
SS9013
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PDF
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transistor cs 9012
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.
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SS9013
625mW
transistor cs 9012
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