I-64.1
Abstract: TRV709 300-Pin trv5019 trv7058 OpNext 10gbase sr 300-pin opnext trv7068 GR-253 TRV5029EZ
Text: Products Products 300-pin Transponder SerDes Transceiver Modules Opnext offers 300-pin Transponders for the following Data Rates / Applications ● ● ● 40 Gbit/s 10 Gbit/s IR/LR 10 Gbit/s SR 40 Gbit/s 40G Features ● ● ● ● ● ● ● Laser Class 1
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300-pin
VSR2000-3R2)
TRV7B10BN
com/jp/products/details/300pin
OC-768
STM-256
TRV5016xS
I-64.1
TRV709
trv5019
trv7058
OpNext 10gbase sr
300-pin opnext
trv7068
GR-253
TRV5029EZ
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opnext l
Abstract: LE7602-LAC LE7602-LA350C LE7602-LA180C Hitachi DSA0045
Text: Technical Data Rev. 1.1, May 2002 LE7602-LAC, LE7602-LAxxxC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)
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LE7602-LAC,
LE7602-LAxxxC
LE7602-LAC
FOD-DS-00073
LE7602-LAC
opnext l
LE7602-LA350C
LE7602-LA180C
Hitachi DSA0045
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opnext
Abstract: LE7602-SAC LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps
Text: Technical Data Rev. 1.0, May 2001 LE7602-SAC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)
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LE7602-SAC
LE7602-SAC
LE7602-SAC,
FOD-DS-00076
opnext
LE7602-S
hitachi laser diode
opnext l
7Pin Connector
opnext laser diode
Hitachi DSA0045
opnext ps
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LB7678
Abstract: opnext Hitachi DSA0045
Text: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator
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LB7678
14-pin
LB7678
LB767
FOD-DS-00075
opnext
Hitachi DSA0045
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opnext
Abstract: LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode
Text: Short Form Preliminary Technical Data Rev. 0.1 December, 2000 op next LE5302-HS Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been
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LE5302-HS
FOD-DS-00072
opnext
LE5302-HS
Hitachi DSA0045
opnext ps
hitachi laser diode
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opnext
Abstract: LB7677L Hitachi DSA0045 opnext ps Opnext t
Text: Preliminary Technical Data Rev. 0.1, July 31, 2001 LB7677L op next Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been
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LB7677L
FOD-DS-00077
opnext
LB7677L
Hitachi DSA0045
opnext ps
Opnext t
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HE8811
Abstract: No abstract text available
Text: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
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HE8811
ODE-208-051
HE8811
HE8811:
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Untitled
Abstract: No abstract text available
Text: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6376DG
ODE-208-064B
HL6376DG
HL6376DG:
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HE8404SG
Abstract: No abstract text available
Text: HE8404SG ODE-208-049 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8404SG
ODE-208-049
HE8404SG
HE8404SG:
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Untitled
Abstract: No abstract text available
Text: HL6364DG/65DG ODE-208-060B Z Rev.2 Oct. 17, 2006 Low Operating Current Visible Laser Diode Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6364DG/65DG
ODE-208-060B
HL6364DG/65DG
HL6364DG/65DG:
HL6364DG
HL6365DG
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HL6325G
Abstract: HL6326G
Text: HL6325G/26G ODE-208-030 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6325G/26G
ODE-208-030
HL6325G/26G
HL6325G/26G:
HL6325G
HL6326G
HL6325G
HL6326G
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HL6314MG
Abstract: HL6324MG
Text: HL6314MG/24MG ODE-208-025 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6314MG/24MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser pointers and optical equipment for amusement.
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HL6314MG/24MG
ODE-208-025
HL6314MG/24MG
HL6314MG/24MG:
HL6314MG
HL6324MG
HL6314MG
HL6324MG
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HL6738MG
Abstract: No abstract text available
Text: HL6738MG ODE-208-047 Z Rev.0 Sept. 25, 2006 Visible High Power Laser Diode Description The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various other types of optical equipment.
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HL6738MG
ODE-208-047
HL6738MG
HL6738MG:
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HL8342MG
Abstract: 852nm
Text: HL8342MG ODE-208-069A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8342MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.
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HL8342MG
ODE-208-069A
HL8342MG
HL8342MG:
852nm
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208017
Abstract: ODE-208-017 HL6312G HL6313G
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
ODE-208-017
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
208017
ODE-208-017
HL6312G
HL6313G
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HE8807FL
Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Text: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050
HE8807SG/FL
HE8807SG:
HE8807FL:
HE8807FL)
HE8807SG)
HE8807FL
HE8807SG
Semiconductor Nuclear Radiation Detector
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HL6556MG
Abstract: No abstract text available
Text: HL6556MG ODE-208-041 Z Preliminary Rev.0 Feb. 06, 2007 AlGaInP Laser Diodes Description The HL6556MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
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HL6556MG
ODE-208-041
HL6556MG
HL6556:
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HL6557MG
Abstract: No abstract text available
Text: HL6557MG ODE-208-053 Z Preliminary Rev.0 Feb. 22, 2007 AlGaInP Laser Diodes Description The HL6557MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
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HL6557MG
ODE-208-053
HL6557MG
HL6557:
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HL6548FG
Abstract: No abstract text available
Text: HL6548FG ODE-208-015D Z Rev.4 Aug. 29, 2006 Visible High Power Laser Diode Description The HL6548FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.
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HL6548FG
ODE-208-015D
HL6548FG
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HE8812SG
Abstract: No abstract text available
Text: HE8812SG ODE-208-052 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8812SG
ODE-208-052
HE8812SG
HE8812:
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GaAs 850 nm Infrared Emitting Diode
Abstract: HE8404SG opnext
Text: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B Z Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8404SG
ODE-208-997B
HE8404SG
HE8404SG:
GaAs 850 nm Infrared Emitting Diode
opnext
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HL6714G
Abstract: ODE-208-044
Text: HL6714G ODE-208-044 Z Rev.0 Oct. 17, 2006 AlGaInP Laser Diode Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic
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HL6714G
ODE-208-044
HL6714G
HL6714G:
ODE-208-044
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HL6356MG
Abstract: HL6357MG
Text: HL6356MG/57MG ODE-208-008D Z Rev.4 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6356MG/57MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6356MG/57MG
ODE-208-008D
HL6356MG/57MG
HL6356MG/57MG:
HL6356MG
HL6357MG
HL6356MG
HL6357MG
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HL6750MG
Abstract: No abstract text available
Text: HL6750MG ODE-208-021A Z Rev.1 Dec. 21, 2006 Visible High Power Laser Diode Description The HL6750MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various other types of optical equipment.
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HL6750MG
ODE-208-021A
HL6750MG
HL6750MG:
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