DVD CD 5888
Abstract: dvd D 5888 s 1550nm Laser Diode with butterfly pin package NX8346 PS9553 PS9317 PS9301 MAN light EDFA dwdm tosa TOSA ROsa
Text: Opto-Electronics Devices Opto-Electronics Devices Home Page http://www.necel.com/opto/ Opto-Electronics Devices, Supporting the Global Information Network Since the dawn of time man has been fascinated by the nature of light. Only recently has he discovered light’s ability to transmit vast quantities of information.
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G0706
PX10160EJ11V0PF
DVD CD 5888
dvd D 5888 s
1550nm Laser Diode with butterfly pin package
NX8346
PS9553
PS9317
PS9301
MAN light EDFA
dwdm tosa
TOSA ROsa
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GSM project circuit
Abstract: GSM project photoshop project adobe photoshop tutorial online sugar manufacturing process D-10 D-12 D-16 opto22 solid state relay midi keyboard scanner
Text: IODISPLAY USER’S GUIDE FORM 1302-060608—JUNE, 2006 43044 Business Park Drive • Temecula • CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services 800-TEK-OPTO (835-6786) or 951-695-3080
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1302-060608--JUNE,
800-321-OPTO
800-832-OPTO
opto22
800-TEK-OPTO
GSM project circuit
GSM project
photoshop project
adobe photoshop tutorial
online sugar manufacturing process
D-10
D-12
D-16
opto22 solid state relay
midi keyboard scanner
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PDF
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AVR077: Opto Isolated Emulation for the DebugWIRE
Abstract: avr dragon AVR jtagice circuit Atmel jtag cable Schematic mkii opto-isolators bidirectional veroboard avr dragon debugging FDS9435A opto isolator photodiode 6N137
Text: AVR077: Opto Isolated Emulation for the DebugWIRE 8-bit 1. Features • DebugWIRE emulation • Opto isolation • Works with AVR Dragon and JTAGICE mkII Microcontrollers Application Note 2. Introduction This application note describes how to implement an optoisolated interface for the
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AVR077:
AVR077: Opto Isolated Emulation for the DebugWIRE
avr dragon
AVR jtagice circuit
Atmel jtag cable Schematic mkii
opto-isolators bidirectional
veroboard
avr dragon debugging
FDS9435A
opto isolator photodiode
6N137
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PDF
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65083
Abstract: DM8820 NE555 pulse generator opto-isolators bidirectional
Text: Issued July 1988 F9085 High speed logic-logic opto-isolators Stock numbers 650-829, 650-835, 650-841, 650-857 These opto-isolators are the first family of truly logic compatible optically coupled interface gates. The family consists of four device types offering LSTTL
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F9085
15Mbaud
NE555
74OL6001
65083
DM8820
NE555 pulse generator
opto-isolators bidirectional
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PDF
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FORTH-83
Abstract: OPTO switch SHARP LC-2
Text: LC2 - LC4 Opto 22 FORTH LC2: Release 2 LC4: Release 3 Form 173.3 LC2/LC4 OPTO 22 FORTH This technical document describes the features, specifications, and operations of the product. The information in this manual has been carefully checked and is believed to be accurate; however, no
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FORTH-83
800/321-OPTO
800/832-0PTO
opto22
800/TEK-OPTO
OPTO switch SHARP
LC-2
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PDF
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CMR1U-02M
Abstract: transformer winding formula 220v Ac to 12v Dc off-line flyback regulator 100w LT3798/99 SMBJ170A
Text: LT3798 Isolated No Opto-Coupler Flyback Controller with Active PFC DESCRIPTION FEATURES n n n n n n n n n The LT 3798 is a constant-voltage/constant-current isolated flyback controller that combines active power factor correction PFC with no opto-coupler required for output
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LT3798
240mA/420mA
LT3757/LT3758
0V/100V
LT3957/LT3958
LTC3803/LTC3803-3/LTC3803-5
200kHz/300kHz
LTC3805/LTC3805-5
CMR1U-02M
transformer winding formula 220v Ac to 12v Dc
off-line flyback regulator 100w
LT3798/99
SMBJ170A
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Untitled
Abstract: No abstract text available
Text: ,TOSHIBA {DISCRETE/OPTO}9097250 TOSHIBA DISCRETE/OPTO TO SH IBA SEMICONDUCTOR TO DE I TDTTSSD GDlt.411 □ Ï 90D 16411 DT-3^S?7 TOSHIBA GTR MODULE MG 3 O G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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-205il
MG30G2DM1-5*
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MG30D2YM1
Abstract: No abstract text available
Text: '“ TOSHIB A { D I S C R E T E / OPTO} 90 97 2 5 0 TOSHIBA TO DISCRETE/OPTO DE I T O ^ S O DDlbijOb 90D 16406 D T'S^'oil TOSHIBA GTR MODULE TOSHIBA SEMIC0NDUCT0R M G 3 0 D 2 Y M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
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125iXMax.
001L41D
Or-39-JO
MG30D2YM1-5
MG30D2YM1
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Untitled
Abstract: No abstract text available
Text: blE D • MMTbEOS 0013002 ATT ■ H I T 4 2SJ244- Preliminary HITACHI/ OPTO ELECTRON ICS Silicon P Channel MOS FET (Dlll-L) Application High speed power switching Low voltage operation Features • Very low on—resistance
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2SJ244
44Tb205
2SJ244
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PDF
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4 channel triac opto
Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN
Text: Contents INDEX OPTO ISOLATORS Photo Transistor 4 & 6 pin DIP FET Couplers High Collector / Emitter Voltage 8 pin SOIC Photo Transistor In Line Packages (4,8,16 pin DIP) Dual Channel Photo Transistor Quad Channel Photo Transistor 4 Photo Transistor Detector
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LHI807
Abstract: LHi 807 Heimann LHI heimann
Text: SIEMENS CAPITAL/ OPTO -ilf 0DD37SE 1 I LHi807 LHi807 Pyroelectric-Single-Element-Detector t¡T - i = 3 - O D Optical Filter — Sensor Crystal FETI — !-o s Gate Resistor -± '•- r The characteristic feature for this series of
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0DD37SE
LHi807
LHI807
LHi 807
Heimann
LHI heimann
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otdr
Abstract: No abstract text available
Text: Optical Device Photocoupler OCMOS FET Opto-coupled MOS FET Relay Tr. Output Type OCMOS FET Product Map Product Map IC Output Type Continuous Load Current vs. Break Down Voltage Lasers (Digital) High-Speed Type 1Mbps(Analog Output) On-state Resistance vs.
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10Mbps
X13769XJ2V0CD00
otdr
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opto fet
Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Text: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers
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P35-1110
0242A
opto fet
00242A
P35-1110
P35-1110-0
P35-1110-1
GaAs MESFET for opto receivers
microwave MARCONI
50ln 50sn
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sm 0038 receiver
Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
Text: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts
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P35-1110
467/SM/00147/200
P35-1110-0
P35-1110-1
sm 0038 receiver
Bookham Technology
Bookham
NN12
P35-1110-0
P35-1110-1
JWT 4 pin
80IN 15PB 5AG
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356 opto
Abstract: 80In/15pb/5ag P35-1110 NN12 P35-1110-0 P35-1110-1 micro-x 420 bookham
Text: Data sheet MESFET for OPTO Receivers Features • General purpose amplifier in PIN FET receiver Performance Optimised to provide high gm • Transimpedance amplifier for wide band PIN FET receiver and low gate leakage • High gm, typically 45mS • Low gate leakage current,
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P35-1110
P35-1110-0
P35-1110-1
467/SM/00147/200
356 opto
80In/15pb/5ag
NN12
micro-x 420
bookham
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Untitled
Abstract: No abstract text available
Text: FEATURES MODEL NO. P35-1110 • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE
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P35-1110
DDQ21
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GEC Marconi
Abstract: marconi
Text: & FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transim pedance Amplifier For W ide Band PIN FET Receiver ■ MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts
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P35-1110
GEC Marconi
marconi
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K C2026 Y
Abstract: C2026 Y C2035 740L6000 c2026 c2026 semiconductor c2033 740L6011 C2036 k C2026
Text: E li HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS OPTOELECTRONICS OPTO/LOGIC LSTTLto ORDER INFORMATION SYMBOL Buffer Inverter 740L6000 740L6001 740L6010 740L6011 FEATURES LOGIC COMPATIBILITY PART LOGIC OUTPUT NUMBER INPUT OUTPUT FUNCTION CONFIGURATION 740L6000 LSTTL
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740L6000
740L6001
740L6010
740L6011
740L6000
740L6001
740L6010
740L6011
K C2026 Y
C2026 Y
C2035
c2026
c2026 semiconductor
c2033
C2036
k C2026
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ST206D
Abstract: H11F H11F1 15v reed relay low cost H11F2 H11F3
Text: Eü PHOTO FET OPTOCOUPLERS OPTO E L E C T R O N I C S H11F1 H11F2 H11F3 PACKAGE DIMENSIONS DESCRIPTION The H11F series has a gallium-alumirtum-arsenide infrared emitting diode coupled to a symmetrica! bilateral silicon photodetector. The detector is electrically isolated
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H11F1
H11F2
H11F3
ST1603
100flto.
300Mn
ST2062
ST2G63
ST206D
H11F
15v reed relay low cost
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4575N
Abstract: No abstract text available
Text: blE D • H4Tb205 DD13t,S7 3T1 ■ H I T l4 PM4575N Preliminary HITACHI/ OPTO ELECTRON ICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching •
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H4Tb205
DD13t
PM4575N
4575N
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PF0010
Abstract: No abstract text available
Text: blE D • 44^205 G0135T5 224 « H I T M HITACHI/ OPTO ELECTRON ICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 820-850 MHz ■ FEATURES • Include Input and Output Matching Circuit • Easy to Control Output Power • Superior to Stability at Load Mismatching
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D13STS
PF0010
PF0010
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OPT202W
Abstract: OPT202P 650NM photodiode photodiode amplifier OPT202 OPT202D QPT202 AB-061
Text: PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION • BANDWIDTH: 50kHz The OPT202 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The transimpedance amplifier consists of a precision FETinput op amp and an on-chip metal film resistor. The
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50kHz
650nm)
OPT202
OPT202
5M-1982.
17313tj5
D0E414?
OPT202W
OPT202P
650NM photodiode
photodiode amplifier
OPT202D
QPT202
AB-061
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Untitled
Abstract: No abstract text available
Text: blE D • 44^205 G0135T5 224 « H I T M HITACHI/ OPTO ELECTRON ICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 820-850 MHz ■ FEATURES • Include Input and Output Matching Circuit • • Easy to Control Output Power Superior to Stability at Load Mismatching
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G0135T5
441b2G5
PF0010
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2SK646
Abstract: No abstract text available
Text: Minnas blE D 2SK646~ 0013110 G47 • H I T 4 HI TACHI/ OPTO ELECTRON ICS 26.0max. SILICON N-CHANNEL MOS FET J¡3mx. lîOtyp-' HIGH SPEED POWER SWITCHING HORIZONTAL DEFLECTION OUTPUT r l.Gate ■ FEATURES 2.Source 3. Drain • • • • High Voltage (VDSS- 1200 V)
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2SK646~
-2SK646
2SK646
QQ131B0
2SK646
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