MCT2201
Abstract: Opto-isolator
Text: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is
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MCT2201
MCT2201
1507C
10sec)
260mW
100x1
Opto-isolator
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ir 035
Abstract: MCT2201
Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is
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MCT2201
MCT2201
1507C
10sec)
260mW
100x1
ir 035
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Untitled
Abstract: No abstract text available
Text: TXPI 1032 4N48 Solid State Opto-Electronic Medium Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring medium CTR gain at low operating currents and high voltage isolation.
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-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: LT3573 Isolated Flyback Converter without an Opto-Coupler FEATURES DESCRIPTION 3V to 40V Input Voltage Range 1.25A, 60V Integrated NPN Power Switch Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation n Improved Primary-Side Winding Feedback
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LT3573
16-Lead
directlyT3758
0V/100V
LT3957/LT3958
0V/80V
3803/LTC3803-3
200kHz/300kHz
OT-23
LTC3803-5
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Untitled
Abstract: No abstract text available
Text: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation.
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-65oC
125oC
-55oC
100oC
260oC,
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OT400
Abstract: No abstract text available
Text: OPTO TEC HNO LOGY INC OflE D | bflOE245 DOOOOTB D | -f- OPTO TECHNOLOGY mmmf TYPE OT 400 MINIATURE PHOTOTRANSISTOR DESCRIPTION Opto Technology’s OT 400 Sensors feature an NPN silicon phototran sisto r m ounted in a m iniature hermetic package. The lensing effect
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bflOE245
OT400-1
OT400-6
OT400-1
OT400-6
OT400
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3 CG 708
Abstract: motion sensor IR TRANSISTOR BH RW H100 Reflective Sensor reflective opto switch
Text: m OPTO bô0224S TECHNOLOGY DDQQSn b INC OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E OTR 6 5 0 Features • TD-18 reflective sensor ■ .0 3 0 aperture ■ Pho totransistor Description Opto Technology's OTR 650 re flective sensor combines two GaA1 As LEDs and an NPN silicon
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0224S
IL60090
3 CG 708
motion sensor IR
TRANSISTOR BH RW
H100
Reflective Sensor
reflective opto switch
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Untitled
Abstract: No abstract text available
Text: ÌMf| ACHTES0 0□ Q7fi4b 0 | TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS.
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DT-33-35
2SD1034A
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2SB678
Abstract: 0939M TOSHIBA 2SB679
Text: 9097250 TOSHIBA mT| TCmESO ~5h TOSHIBA {DISCRETE/OPTO} aa077bb DISCRETE/OPTO SILICON NPN EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ Unit in mm 09.39M A X. LOW FREQUENCY MEDIUM POIJER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.
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aa077bb
2SB678
C611ector-Emitter
2SB678
0939M
TOSHIBA 2SB679
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opto npn
Abstract: OT415
Text: ai L.fl022L|S 0 0 0 0 1 4 5 3 OPTO TECHNOLOGY INC OPTO TECHNOLOGY N P N SILICO N PH O TO D A R LIN G T O N T Y P E OT 4 1 5 Features • High cu rre n t gain ■ TO-46 package ■ Herm etically sealed Description Opto Technology's type OT 415 sensor features an NPN
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flD224S
000014S
opto npn
OT415
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MG50G1BL2
Abstract: mg50g1b mg50g1bl MG50G1
Text: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,
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MG50G1BL2
082L6
MG50G1BL2
mg50g1b
mg50g1bl
MG50G1
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amp mta 100
Abstract: amp mta-100 MTA-100
Text: •i t,ÖOE24S □DDDBS'i T OPTO TECHNOLOGY ■ OTI INC 42E D 4 0 OPTO TECHNOLOGY 3 - REFLECTIVE SWITCH T Y P E OTR 6 9 6 Features ■ Photodarlington ■ Low profile * Narrow depth of field to eliminate background interference Description Opto Technology's OTR 6 9 6 consists of a
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OE24S
00D22tÃ
amp mta 100
amp mta-100
MTA-100
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Untitled
Abstract: No abstract text available
Text: sb TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ï>F| ^ a ^ s a 0D 077t,a t T-33-35 56C 07768 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED M ESA TYPE _ DARLINGTON POWER)_ 2SD698 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.
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T-33-35
2SD698
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Untitled
Abstract: No abstract text available
Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG75H6EL1
Ic-75A)
Icm75A)
MG75H6EL1-1
MG75H6EL1-4
MG150Q2YK1
MG200Q1UK1
MG75Q2YK1
MG50Q2YK1
10Sec.
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opto npn
Abstract: photo darlington sensor
Text: •I bflOZBMS D 0 0 0 1 4 1 OPTO TECHNOLOGY b IOTI INC 4¡BE J> q - - U l - OPTO TECHNOLOGY ^ 3 N P N SILICON PHOTODARLINGTON T Y P E OT 411 Features ■ Miniature photodarlington ■ Hermetically sealed package ■ High sensitivity Description Opto Technology's OT 411 sen
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D000141
0T411L
0T411
Ratings141
opto npn
photo darlington sensor
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2N6547
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA dFJtoTPESO ~5Í CD ISCRETE/OPTO DQOöObS DT'iä 'iS ' 56c 08065 SILICON NPNTRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE Unit in mm SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER, RELAY AND SOLENOID
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Coll03-
2N6547
2N6547
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Toshiba transistor NPN Ic 50A
Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35' TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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001L33S
Dr-33-35"
MG50N2CK1
TJS1251C
EGM-HC50N2CK1-4
Toshiba transistor NPN Ic 50A
toshiba diode 1A
TOSHIBA D
MG50N2CK1
50n2
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md 5408
Abstract: MG300G1UL1 MG300H1UL1 MG300 4.90g transistor ES300
Text: TOSHIBA - C D I S CRETE/OPTO} TO 9097250 TOSHIBA DISCRETE/OPTO TOSH IBA DE | TQT75S0 001b03fl 3 90D 16038 SEMICONDUCTOR 0 7-53-3^* TOSHIBA GTR MODULE MG300G1UL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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tqt75s0
001l03a
MG300G1UL1
09A1A
MG300H1UL1-4
md 5408
MG300H1UL1
MG300
4.90g transistor
ES300
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} "TD DE| TO^HSO 9097250 TOSHIBA DISCRETE/OPTO tfosììUk ODlbBlS 90D 163 15 3 DT- 33-35 SEMICONDUCTOR TOSHIBA G-TR MODULE TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG25M2CK2
50/ia1
EGA-MG25M2CK2-4
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2SC2650
Abstract: QD07S go z60
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Sh DISCRETE/OPTO 2SC2650 DE | t d eJ7SS0 QD07SÖ1 56C 07581 DT'-JJV? SILICON NPN TRIPLE DIFFUSED TYPE 34.3M AX. 5.3MAX 31 JO SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
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QD07SÃ
2SC2650
2SC2650
QD07S
go z60
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2SD1360
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb d F | TG17S5D □ □ 0 7 cIE cì 4 DISCRETE/OPTO “ U 7 ' T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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TG17S5D
07cI2cI
T-33-29
100X100X
2SD1360
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MG15H6EL1
Abstract: No abstract text available
Text: ~TD TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO> ¿^ashtha SEMICONDUCTOR D Ë Ï TOTTESO DD lt.HM 4 90D 16209 D”T-3 'Ò-'ÒS TOSHIBA GTR MODULE MG15H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG15H6EL1
EGA-MG15H6EL1-1
MG15H6EL1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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DT-33-3^
MG50M2CK2
Dr-33-3S
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PDF
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Untitled
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.
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MG300Q1UK1
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