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    OPTO THYRISTOR GATE Search Results

    OPTO THYRISTOR GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    OPTO THYRISTOR GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    convert 230V AC to 5V DC

    Abstract: thyristor firing circuit scr firing circuit protection circuit triac burst firing circuit BS7671 X10213 X10229 X10255 marking Z4 marking Z2
    Text: LTM LOGIC TRIGGER MODULE X10320 INTRODUCTION This logic driven trigger module gives zero crossing opto-isolated control to convert on/off signals into power, via inverse parallel thyristor or triac. It can accept a wide range of signals from TTL, CMOS TM devices, processor or fast cycling instrument sources. Unique MONO-LINK feature gives hard gate


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    PDF X10320 BS7671) convert 230V AC to 5V DC thyristor firing circuit scr firing circuit protection circuit triac burst firing circuit BS7671 X10213 X10229 X10255 marking Z4 marking Z2

    toshiba SF50G13

    Abstract: SF50G13 sf50l13 SF50J13 SF50D13 SF50Q13 S4006 SF50F13 SF50N13 tc 5070 toshiba
    Text: 9097250 TOSHIBA DISCRETE/OPTO D~J-¿LS" 11 39C 02 276 PHASE CONTROL THYRISTOR TOSHIBA 3T O ISCRETE/OPTO} 1200V SF50Q13 De | TOTTESO DODHETb 50A ELECTRICAL CHARACTERISTICS SYMBOL CH A RA C TERISTIC Repetitive Peak Off-State Current I drm and V drm= V rrm = Rated


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    PDF SF50Q13 SF50D13 SF50FI3 SF50G13 SF50J13 SF50L13 SF50N13 SF50F13 toshiba SF50G13 SF50G13 sf50l13 SF50J13 SF50D13 SF50Q13 S4006 SF50F13 SF50N13 tc 5070 toshiba

    CA-125C

    Abstract: No abstract text available
    Text: 9097250 TOSHIBA <DISCRETE/OPTO I ". 39C 02320 0 T c<Äc5'“/-5T' BI-DIRECTIONAL TRIODE THYRISTOR TRIAC) TOSHIBA OISCRETE/OPTO} SM 16G 14 il DE | TDTTaSD 0 M E 3 5 0 400V 16 A ¿25.0M *. ¿gl.O M ax. MAXIMUM RATINGS CH A RA CTERISTIC Repetitive Peak SM16D14


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    PDF SM16D14 SM16G14 CA-125C

    2N4991

    Abstract: 2N4992 MBS4992
    Text: MOT OR OL A M SC 34 -CDIODES/OPTO 6367255 MOTOROLA SC DËT|b3b7E5S DIODES/OPTO 34C SILICON THYRISTOR DIE (continued) DD3A1S1 38151 T " ' ^ •$’ ' °J 2C4991 DIE NO. LINE SOURCE — DTL71 Device assembled from this die type are similar to the fol­ lowing device types:


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    PDF DTL71 2C4991 MBS4991 MBS4992 2N4991 2N4992 2N4993

    thyristor T10

    Abstract: triac phase control 1S2093 opto triac SCR TRIGGER circuit Thyristor triac Phase Control Circuit VB01 thyristor T10-25
    Text: T O S H I B A -CDISCRETE/OPTO} 9097250 T O S H IB A dFI'ìottsso doo^bos i 1 ” ~w? DISCRETE/OPTO 67C 0 9 3 0 5 £ Silicon Planar Type 1S2093 Trigger Diode THYRISTOR, TRIAC TRIGGER APPLICATIONS. Unit in mm FEATURES: . A symmetrial negative resistance characteristics in


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    PDF 1S2093 1S2093 thyristor T10 triac phase control opto triac SCR TRIGGER circuit Thyristor triac Phase Control Circuit VB01 thyristor T10-25

    OPTO TRIAC 1200v

    Abstract: OPTO thyristor gate TOSHIBA THYRISTOR
    Text: 9097250 TOSHIBA DISCRETE/OPTO 39 C 0 2 3 2 5 0 7 ^ 2 .5 -/^ BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) 3 TOSHIBA {DISCRETE/OPTO} SM150Q13 ~ Ì DE~| T O T V S S O 0 D D 53 SS 5 Unit in mm 1200V 150A MAXIMUM RATINGS CH ARACTERISTIC SYM BOL RATING SM150G13 400


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    PDF SM150Q13 SM150G13 SM150J SM150Q13 OPTO TRIAC 1200v OPTO thyristor gate TOSHIBA THYRISTOR

    628-400

    Abstract: X103
    Text: 9097250 T OS HI BA 39C 0 2 3 0 9 DISCRETE/OPTO DT-af'/*? HIGH-SPEED THYRISTOR TOSHIBA {DISCR ET E/OPTO! SH40ÖR26B 3T DE I ^0^7250 0GDE30T 4 J Unit in mm 1300V 400A MAXIMUM RATINGS CHARACTERISTIC SYMBOL Repetitive Peak Off-State Voltage Vdrm and and Repetitive Peak Reverse Voltage Vrrm


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    PDF 0GDE30T 628-400 X103

    Triac 2N5444

    Abstract: MAC50 2N5446 triac Motorola
    Text: MOTOROLA SC Í DI ODES/OPTO} i 6 3 6 7 2 5 5 MOTOROLA SC "34 ÍF|t,3b7SSS DD3aiSW 7 |"~ DI ODES/ OPTO 34C 3 8 15 4 7^ 2- 5" - SILICON THYRISTOR DIE (continued) / 7 2C5446 CHIP NO. UNE SOURCE — DTL0440 Device assembled from this die type are similar to or


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    PDF DTL0440 2N5441 2N5442 2N5443 2N5444 2N5445 2N5446 MAC50, 2C5446 Triac 2N5444 MAC50 triac Motorola

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} ^ 9097250 TOSHIBA <DISCRETE/OPTO D E f TOTTBSO 00174Ö0 1 | 99D 17480 D T-W-Z7 TLP6 I IJ GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP611J consists of a photo­ thyristor connected inverse parallel optically coupled to a gallium arsenide infrared emitt­


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    PDF TLP611J 200mA 5000Vrms E67349 TaS25Â -100H8 DT-4/-87

    SF16G14

    Abstract: sf16d14 110A1 SF16B14 AC42C sf16d TOSHIBA THYRISTOR OPTO thyristor gate
    Text: 9097250 TOSHIBA 39C DISCRETE/OPTO "F -âS '-'/S ' PHASE CONTROL THYRISTOR TOSHIBA {DISCRETE/OPTO} De I ^ O T T E S O 3 e] 0002273 1 16A 400V SF16G14 0227 3 Unit in ma ÿ2S.0Mix. MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak SF 16B 14 Off-State Voltage


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    PDF SF16G14 0Q0EE73 SF16B14 SF16D14 SF16B14 SF16D14 SF16G14 110A1 AC42C sf16d TOSHIBA THYRISTOR OPTO thyristor gate

    SH100G21A

    Abstract: SH100G RG102 SH100D21A SH100F21A SH100J21A SH100L21A TOSHIBA THYRISTOR
    Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 02300 HIGH-SPEED THYRISTOR TOSHIBA {DISCRETE/OPTO} SH100L21A 800V 100A 2 - ¿ 4 ± 0 .2 MAXIMUM RATINGS SYM BOL R A T IN G C H A R A C T E R IS T IC SH100D21A 200 Repetitive Peak 300 O ff-State Voltage SH100F21A V drm and Repetitive


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    PDF SH100L21A SH100D21A SH100F21A SH100G21A SH100J SH100J21A SH100G21A SH100G RG102 SH100F21A SH100J21A SH100L21A TOSHIBA THYRISTOR

    SM30G12

    Abstract: d2323 SM30D12 TOSHIBA THYRISTOR
    Text: 9097250 T O S H I B A DISCRETE/OPTO 39C 0 2 3 2 3 D 7"-<ajTW7 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) DEI-ÎGT725D □□D2323 T TOSHIBA {D IS CR ETE/OPTO} 5M30G12 30A 450V 8MAX. MAXIMUM RATINGS SY M B O L C H A R A C T E R IS T IC Repetitive Peak Off-State Voltage


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    PDF GT725D D2323 5M30G12 SM30D12 SM30G12 517MAX. TOSHIBA THYRISTOR

    SF2D41

    Abstract: TF011 SF2G41 SF-2D41 SF2B41 SF2J41 TOSHIBA THYRISTOR TLMS1
    Text: 9097250 TOSHIBA 3V L CDISCRETE/OPTO U ¿ ¿ t> ô Ü - fZ ~ ¿ 5 ^ -/3 PHASE CONTROL THYRISTOR 3T TOSHIBA {D IS CR ETE/OPTO} SF2J41 600V » F | c1 0 ti 7 S S 0 ODGEEbB t H I “ in mm I 2A MAXIMUM RATINGS SYM BOL C H A RA CTER ISTIC UNIT RATING 100 R epetitive Peak


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    PDF SF2J41 c10ti7SS0 SF2B41 SF2D41 SF2G41 SF2D41 TF011 SF2G41 SF-2D41 SF2J41 TOSHIBA THYRISTOR TLMS1

    4b2h

    Abstract: TOSHIBA THYRISTOR
    Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2348 0 7^ Ö [ ~ z j THYRISTOR STACK (FLAT PACKAGE THYRISTOR STACK FOR RESISTANCE WELDING) 3 e! DEj l O T ? 2 5 D 0 0 0 5 3 4 0 3 | BW4B-2H C TYPE 12 CW4B-2H 14 12 14 ' DW4B-2H 12 14 ! EW4B-2H 12 14 : 12 FW4B-2H 14 CODING )


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    PDF DD0E34T 4B-2H14 4B-2H14 4b2h TOSHIBA THYRISTOR

    Untitled

    Abstract: No abstract text available
    Text: 9 0 9 7 2 5 0 TOSHIBA <DISCRETE/OPTO 39C 0 2 3 1 7 0 T -”cP «S'-/5' BI-DIRECTIONAL TRIODE THYRISTOR TRIAC) TOSHIBA -CDISCRETE/OPTO} 400V 10A SM10G14 I*ï » F | TOTTESO 0 0 0 5 3 1 7 3 Unit in mm ¿25.0MAX. 1Í2I.0MAX. M A X IM U M RATINGS C H A R A C T E R IS T IC


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    PDF SM10G14 SM10D14 SM10G14 12S1C.

    2N4213

    Abstract: 2N4214 2N4216 2N4219 anode gate thyristor motorola reverse blocking triode thyristor OPTO thyristor gate
    Text: MOTOROLA SC •£DI OD E S/OPTO} ÔÏ DE | b3b7ESS DDTfllha 7 -// 2N4213 thru 2N4219 S ilic o n Controlled Rectifiers Reverse B lockin g Triode Thyristor . . . all diffused PNPN devices designed fo r operation in mA/juA signal o r detection circuits. • •


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    PDF b3b725S 2N4213 2N4219 O-205AD) 2N4213 2N4214 2N4216 2N4219 anode gate thyristor motorola reverse blocking triode thyristor OPTO thyristor gate

    sf150j15

    Abstract: SF150G15 SF-150 TOSHIBA THYRISTOR
    Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 02281 D “7^«a5-/9 PHASE CONTROL THYRISTOR » e | TD'iVESD 0D0a2ñl Û | TOSHIBA ÍDISCRETE/0PT0} U n it in mm SF150J15 600V 150A MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak O ff-State Voltage SF150G 15


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    PDF SF150J15 270kg-ag SF150G15 45X103 sf150j15 SF-150 TOSHIBA THYRISTOR

    SF800J26

    Abstract: SF800R26 SF800U26 SF800L26 SF800N26 X103
    Text: 1 i T d e | ' î ü c1755D TOSHIBA -CDISCRETE/OPTOï □□□a2û‘î 2 | _7"-<2>5 ‘-a .Ö PHASE CONTROL THYRISTOR SF800U26 Unit in mm 1600V 800A MAXIMUM RATINGS CH A R A C TER ISTIC SF800J26 Repetitive Peak SF800L26 Off-State Voltage and Repetitive SF800N26


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    PDF SF800U26 SF800J26 SF800L26 SF800N26 SF800R26 SF800R26 SF800U26 SF800L26 SF800N26 X103

    AC15A

    Abstract: TRIAC FT 12 thyristor FT 12 2N5570 triac Motorola Discrete Thyristor Chip 2N5571
    Text: MOTOROLA SC i DIODES/O PTO ï 6367255 MOTOROLA SC 34 D E § b3t>7555 0030155 1 DIODES/OPTO 34C 38155 T * SILICON THYRISTOR DIE (continued) 2 s'-z'dr 2C5574 CHIP NO. LINE SOURCE — DTL0420 Device assembled from this die type are similar to or better than the following device types:


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    PDF DTL0420 2N5567 2N5568 2NSS69 2N5570 2N5571 2N5572 2N5573 2N5S74 2C5574 AC15A TRIAC FT 12 thyristor FT 12 triac Motorola Discrete Thyristor Chip

    SFOR3G42

    Abstract: SFOR3B42 SFOR3D42 SFOR3J42 I-RTAX 02261 SF0R3J42 SF0R3 TOSHIBA THYRISTOR sfor3g
    Text: 9097250 TOSHIBA - ¿ t w n n Goossbi a | SF0R3J42 600V O T - SS"- &=> 39C 02 261 DISCRETE/OPTO PHASE CONTROL THYRISTOR Unit in mm 0.3A (65.1MAX. MAXIMUM RATINGS C H A R A C T ER IST IC SYM BOL 100 R epetitive Peak O ff-State Voltage SFOR3D42 and Repetitive


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    PDF 10172S0 SF0R3J42 SFOR3B42 SFOR3D42 SFOR3G42 SFOR3J42 SFOR3G42 SFOR3D42 SFOR3J42 I-RTAX 02261 SF0R3J42 SF0R3 TOSHIBA THYRISTOR sfor3g

    SF30Q13

    Abstract: SF30F13 SF30D13 SF30G13 SF30L13 SF30N13 ac56 TOSHIBA THYRISTOR OPTO thyristor gate
    Text: 9097250 TOSHIBA 39C 02275 <D I S C R E T E / O P T O PHASE CONTROL THYRISTOR »F| ^ 7 3 5 0 TOSHIBA {DISCRETE/OPTO} SF30Q13 Unit in n n DD0S57S 1200V 30A MAXIMUM RATINGS C H A R A C TER ISTIC SF30D13 Repetitive Peak SF30F13 Off-State Voltage SF30G13 and Repetitive


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    PDF SF30Q13 SF30D13 SF30F13 SF30G13 SF30J SF30L13 SF30N13 SF30Q13 SF30F13 SF30G13 SF30L13 SF30N13 ac56 TOSHIBA THYRISTOR OPTO thyristor gate

    SCR 2N6399

    Abstract: 2n6397 scr SCR 2N6397 2n6397 scr 2n6396 2N6397 MOTOROLA 2N6398 2C6399 2N6396 motorola opto scr
    Text: 34 MOTOROLA SC Í D I O D E S / O P T O 6367255 MOTOROLA SC D e | b3t,7ESS 003fllb0 S | DIODES/OPTO 34C 38160 D SILICON THYRISTOR DIE (continued) 2C6399 CHIP NO. LINE SOURCE — DTL0310 Device assembled from this die type are similar to or better than the following device types:


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    PDF 003fllb0 DTL0310 2N6394 2N6395 2N6396 2N6397 2N6398 2N6399 2C6399 12Vdc, SCR 2N6399 2n6397 scr SCR 2N6397 scr 2n6396 2N6397 MOTOROLA 2C6399 motorola opto scr

    triac phase control

    Abstract: thyristor T10 max3650 Phase Control Circuit TOSHIBA THYRISTOR 01AG 1s2093
    Text: w? D E j ^ ^ a s a DDCHBOS i "|~ TOSHIBA { DI SC RE TE/O PT O} 9097250 TOSHIBA D I S C R E T E / OPTO 67C 0 9 3 0 5 £ Silicon Planar Type 1S2093 Trigger Diode THYRISTOR, TRIAC TRIGGER APPLICATIONS. Unit in mm FEATURES: . A symmetrial negative resistance characteristics in


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    PDF 1S2093 1S2093 SC-43 triac phase control thyristor T10 max3650 Phase Control Circuit TOSHIBA THYRISTOR 01AG

    SM30G11

    Abstract: SM30D11 AL-56 TOSHIBA THYRISTOR TCH75SD al56
    Text: 9097250 TOSHIBA 3 9 c V*'* D IS C R E T E /OPTO D T~ 2.5~-/7 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA -CDISCRETE/0PT03450V 30A in SM30G11 DE | TCH75SD 00Da3S2 7 Unit in um MAXIMUM RATINGS SYM BOL CH A RA C TERISTIC SM30D11 Repetitive Peak Off-State Voltage SM30G11 V drm


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    PDF -CDISCRETE/0PT03450V SM30G11 TCH75SD 00Da3S2 SM30D11 SM30G11 AL-56 TOSHIBA THYRISTOR al56